JP6360174B2 - ３次元ワイヤボンド型インダクタ - Google Patents

３次元ワイヤボンド型インダクタ Download PDF

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Publication number
JP6360174B2
JP6360174B2 JP2016539293A JP2016539293A JP6360174B2 JP 6360174 B2 JP6360174 B2 JP 6360174B2 JP 2016539293 A JP2016539293 A JP 2016539293A JP 2016539293 A JP2016539293 A JP 2016539293A JP 6360174 B2 JP6360174 B2 JP 6360174B2
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JP
Japan
Prior art keywords
inductor
wire
wire loop
substrate
loop
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2016539293A
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English (en)
Japanese (ja)
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JP2017501574A (ja
JP2017501574A5 (enExample
Inventor
チェンジエ・ズオ
マリオ・フランシスコ・ヴェレス
ジョンヘ・キム
デイク・ダニエル・キム
チャンハン・ホビー・ユン
Original Assignee
クアルコム，インコーポレイテッド
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Publication of JP2017501574A publication Critical patent/JP2017501574A/ja
Publication of JP2017501574A5 publication Critical patent/JP2017501574A5/ja
Application granted granted Critical
Publication of JP6360174B2 publication Critical patent/JP6360174B2/ja
Expired - Fee Related legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/0115—Frequency selective two-port networks comprising only inductors and capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/28—Coils; Windings; Conductive connections
    • H01F27/2866—Combination of wires and sheets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5223—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/4813—Connecting within a semiconductor or solid-state body, i.e. fly wire, bridge wire
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48464—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Wire Bonding (AREA)
  • Manufacturing & Machinery (AREA)
JP2016539293A 2013-12-23 2014-12-16 ３次元ワイヤボンド型インダクタ Expired - Fee Related JP6360174B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361920334P 2013-12-23 2013-12-23
US61/920,334 2013-12-23
US14/177,620 US9692386B2 (en) 2013-12-23 2014-02-11 Three-dimensional wire bond inductor
US14/177,620 2014-02-11
PCT/US2014/070517 WO2015100067A1 (en) 2013-12-23 2014-12-16 Three-dimensional wire bond inductor

Publications (3)

Publication Number Publication Date
JP2017501574A JP2017501574A (ja) 2017-01-12
JP2017501574A5 JP2017501574A5 (enExample) 2017-09-28
JP6360174B2 true JP6360174B2 (ja) 2018-07-18

Family

ID=53401229

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016539293A Expired - Fee Related JP6360174B2 (ja) 2013-12-23 2014-12-16 ３次元ワイヤボンド型インダクタ

Country Status (5)

Country Link
US (1) US9692386B2 (enExample)
EP (1) EP3087600A1 (enExample)
JP (1) JP6360174B2 (enExample)
CN (1) CN105874594B (enExample)
WO (1) WO2015100067A1 (enExample)

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* Cited by examiner, † Cited by third party
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US9999121B2 (en) 2016-04-25 2018-06-12 Laird Technologies, Inc. Board level shields with virtual grounding capability
EP3282304B1 (fr) * 2016-08-08 2023-10-04 Essilor International Equipement ophtalmique; procédé d'alimentation d'un équipement ophtalmique
US10236852B2 (en) * 2016-12-09 2019-03-19 Nxp Usa, Inc. Parallel LC resonator and method therefor
CN106876372A (zh) * 2017-02-06 2017-06-20 无锡吉迈微电子有限公司 三维玻璃电感结构和制作工艺
CN109037196A (zh) * 2018-08-28 2018-12-18 湖南格兰德芯微电子有限公司 耦合电感结构
KR102830158B1 (ko) 2022-03-28 2025-07-07 삼성전자주식회사 캐패시터 와이어를 포함하는 칩 캐패시터
CN119731938A (zh) * 2023-02-17 2025-03-28 京东方科技集团股份有限公司 滤波器、集成无源器件、电子器件及显示装置

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US3648132A (en) * 1970-04-20 1972-03-07 Illinois Tool Works Multilayer capacitor and process for adjusting the value thereof
JPS5044258U (enExample) * 1973-08-22 1975-05-06
JPS53117735A (en) * 1978-01-23 1978-10-14 Alps Electric Co Ltd Method of making thin film lc circuit
US4255728A (en) * 1978-08-24 1981-03-10 Doty Archibald C Jun Parallel resonant electric circuit
JPS60194508A (ja) * 1984-03-16 1985-10-03 Ricoh Co Ltd ワイヤボンデイングにより形成されたインダクタンス
JPH0693589B2 (ja) * 1989-03-23 1994-11-16 株式会社村田製作所 Ｌｃフィルター
JPH04354108A (ja) * 1991-05-31 1992-12-08 Sumitomo Electric Ind Ltd インダクタ素子
JPH05190331A (ja) * 1992-01-16 1993-07-30 Elmec Corp 電磁遅延線用インダクタンス素子およびその製造方法
JPH09106915A (ja) * 1995-10-13 1997-04-22 Matsushita Electric Ind Co Ltd 高周波用インダクタ
JPH1074625A (ja) * 1996-08-30 1998-03-17 Ikeda Takeshi インダクタ素子
JPH10289921A (ja) 1997-04-14 1998-10-27 Matsushita Electric Ind Co Ltd 半導体装置
JP3970393B2 (ja) * 1997-10-16 2007-09-05 富士通株式会社 等化フィルタ及び波形等化制御方法
US6586309B1 (en) * 2000-04-24 2003-07-01 Chartered Semiconductor Manufacturing Ltd. High performance RF inductors and transformers using bonding technique
JP2002164214A (ja) 2000-10-27 2002-06-07 Xerox Corp ボンディングワイヤを使用する非同一面マイクロコイル及びその製造方法
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JP4255442B2 (ja) * 2002-09-10 2009-04-15 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー ワイヤ・ボンド・インダクタを有する半導体装置および方法
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JP2005026384A (ja) * 2003-06-30 2005-01-27 Tdk Corp インダクタ素子、それを含む電子部品及び製造方法
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Also Published As

Publication number Publication date
US20150180437A1 (en) 2015-06-25
WO2015100067A1 (en) 2015-07-02
JP2017501574A (ja) 2017-01-12
CN105874594A (zh) 2016-08-17
EP3087600A1 (en) 2016-11-02
CN105874594B (zh) 2019-06-04
US9692386B2 (en) 2017-06-27

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