JP6346339B2 - 有機半導体薄膜の製造装置 - Google Patents
有機半導体薄膜の製造装置 Download PDFInfo
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- NYBWUHOMYZZKOR-UHFFFAOYSA-N tes-adt Chemical compound C1=C2C(C#C[Si](CC)(CC)CC)=C(C=C3C(SC=C3)=C3)C3=C(C#C[Si](CC)(CC)CC)C2=CC2=C1SC=C2 NYBWUHOMYZZKOR-UHFFFAOYSA-N 0.000 description 1
- VJYJJHQEVLEOFL-UHFFFAOYSA-N thieno[3,2-b]thiophene Chemical class S1C=CC2=C1C=CS2 VJYJJHQEVLEOFL-UHFFFAOYSA-N 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
- B05C11/02—Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface ; Controlling means therefor; Control of the thickness of a coating by spreading or distributing liquids or other fluent materials already applied to the coated surface
- B05C11/023—Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface
- B05C11/028—Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface with a body having a large flat spreading or distributing surface
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
- B05C11/02—Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface ; Controlling means therefor; Control of the thickness of a coating by spreading or distributing liquids or other fluent materials already applied to the coated surface
- B05C11/04—Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface ; Controlling means therefor; Control of the thickness of a coating by spreading or distributing liquids or other fluent materials already applied to the coated surface with blades
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C5/00—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work
- B05C5/02—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work the liquid or other fluent material being discharged through an outlet orifice by pressure, e.g. from an outlet device in contact or almost in contact, with the work
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C5/00—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work
- B05C5/02—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work the liquid or other fluent material being discharged through an outlet orifice by pressure, e.g. from an outlet device in contact or almost in contact, with the work
- B05C5/0254—Coating heads with slot-shaped outlet
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
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- C—CHEMISTRY; METALLURGY
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/54—Organic compounds
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- Manufacturing & Machinery (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Thin Film Transistor (AREA)
Description
本発明の一実施の形態における有機半導体薄膜の製造方法について、図1A〜図1Cを参照して説明する。この製造方法によれば、有機半導体材料を溶媒に溶解させた原料溶液を基板1上に供給する。そして、溶媒を蒸発させることにより有機半導体材料の結晶を析出させて、有機半導体薄膜を基板上に形成する。図1Aは、有機半導体薄膜アレイの製造方法の工程に用いる装置を示す断面図である。図1B〜図1Dは、同製造方法の工程の状態を順次示す断面図、図1Eは、図1Cに示した状態の平面図である。なお、図1Eにおいて、一部の要素に付したドットは、各要素を判別し易くするためであって、断面を示すものではない。
2、8、9 端面成形部材
2a、8a、9a、21a、25a 接触面
3 表面改質層
4、4a〜4c 溶液供給ノズル
5 ホットプレート
6 原料溶液
6a、22 液滴
7a 結晶
7、23、23a 有機半導体薄膜
10 TFT素子
21 端面接触部材
24 補助基板
25 接触凸部
26 接触部材
Claims (9)
- 有機半導体材料を溶媒に溶解させた原料溶液を基板上に供給する原料供給源と、
前記基板の表面との間に一定の間隔を設けて対向配置された端面成形部材とを備え、
前記原料供給源と前記端面成形部材とが、前記基板に対して相対的に移動可能である有機半導体薄膜の製造装置において、
前記端面成形部材は、前記基板上に供給された前記原料溶液が形成する液滴に接触するように、かつ、前記基板の表面に対して一定の角度で交差するように配置された接触面を有し、
前記原料供給源と前記端面成形部材とを前記液滴から離間する方向に移動させた際、前記液滴の大きさが所定の範囲に維持されるように前記原料溶液を前記原料供給源から供給することを特徴とする、有機半導体薄膜の製造装置。 - 前記原料供給源が、内部空洞を通して先端部に形成された原料供給口から前記原料溶液を注出する溶液供給ノズルである、請求項1に記載の有機半導体薄膜の製造装置。
- 前記原料供給源として複数個の前記溶液供給ノズルを備える、請求項2に記載の有機薄膜半導体装置の製造装置。
- 複数個の前記溶液供給ノズルの少なくとも一つから、他の前記溶液供給ノズルから注出されるものとは異なる種類の前記原料溶液を抽出可能な、請求項3に記載の有機半導体薄膜の製造装置。
- 前記溶液供給ノズルが、前記液滴から離間する前記方向における前方側に前記端面成形部材とは所定の間隔を隔てて配置され、前記溶液供給ノズルの前記原料供給口が前記端面成形部材と前記基板の表面との間の前記間隔に隣接している、請求項2〜4のいずれかに記載の有機半導体薄膜の製造装置。
- 前記溶液供給ノズルが前記端面成形部材の内部に設けられた内腔を通して配置され、前記端面成形部材の前記液滴から離間する前記方向における後方側の側面に形成された開口から前記原料溶液を供給する、請求項2〜4のいずれかに記載の有機半導体薄膜の製造装置。
- 前記溶液供給ノズルが前記端面成形部材の内部に設けられた内腔を通して配置され、前記端面成形部材の直下へ向けて形成された開口から前記原料溶液を供給する、請求項2〜4のいずれかに記載の有機半導体薄膜の製造装置。
- 前記接触面が、前記端面成形部材の一側面に前記基板の表面に対して直交するように配置されている、請求項1〜7のいずれかに記載の有機半導体薄膜の製造装置。
- 前記基板の下面側に前記基板を加熱するホットプレートが配置されている、請求項1〜8のいずれかに記載の有機半導体薄膜の製造装置。
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US (1) | US10205094B2 (ja) |
EP (1) | EP2991129B1 (ja) |
JP (2) | JP6128665B2 (ja) |
KR (1) | KR102196923B1 (ja) |
CN (1) | CN105144417B (ja) |
WO (1) | WO2014175351A1 (ja) |
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US10333072B2 (en) * | 2014-08-28 | 2019-06-25 | Basf Se | Thin film semiconductor comprising a small-molecular semiconducting compound and a non-conductive polymer |
JP6259390B2 (ja) * | 2014-12-11 | 2018-01-10 | 富士フイルム株式会社 | 有機トランジスタの製造方法、有機トランジスタ |
JP6274529B2 (ja) * | 2015-02-09 | 2018-02-07 | 富士フイルム株式会社 | 有機半導体素子及びその製造方法、有機半導体膜形成用組成物、並びに、有機半導体膜の製造方法 |
WO2017022735A1 (ja) | 2015-08-04 | 2017-02-09 | 富士フイルム株式会社 | 有機薄膜トランジスタ、有機薄膜トランジスタの製造方法、有機薄膜トランジスタ用材料、有機薄膜トランジスタ用組成物、有機半導体膜、化合物 |
WO2017022491A1 (ja) | 2015-08-04 | 2017-02-09 | 富士フイルム株式会社 | 有機薄膜トランジスタ、有機薄膜トランジスタの製造方法、有機薄膜トランジスタ用材料、有機薄膜トランジスタ用組成物、有機半導体膜、化合物 |
EP3333919B1 (en) | 2015-08-04 | 2020-03-11 | FUJIFILM Corporation | Organic thin-film transistor and method for producing same, organic thin-film transistor material, organic thin-film transistor composition, compound, and organic semiconductor film |
WO2017086320A1 (ja) | 2015-11-20 | 2017-05-26 | 富士フイルム株式会社 | 有機半導体組成物、有機半導体膜、有機薄膜トランジスタおよび有機薄膜トランジスタの製造方法 |
CN105586641B (zh) * | 2016-01-12 | 2018-02-09 | 山东大学 | 甲胺卤化铅酸盐化合物单晶微米薄片生长方法及生长装置 |
CN108475644A (zh) | 2016-02-03 | 2018-08-31 | 富士胶片株式会社 | 有机半导体膜的制造方法 |
EP3432375B1 (en) | 2016-03-16 | 2021-12-29 | FUJIFILM Corporation | Organic semiconductor composition, method for manufacturing organic thin film transistor, and organic thin film transistor |
EP3439055A4 (en) * | 2016-03-30 | 2019-02-20 | FUJIFILM Corporation | FILM PRODUCTION PROCESS |
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