JPWO2014175351A1 - 有機半導体薄膜の製造方法 - Google Patents
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- B05C11/02—Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface ; Controlling means therefor; Control of the thickness of a coating by spreading or distributing liquids or other fluent materials already applied to the coated surface
- B05C11/04—Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface ; Controlling means therefor; Control of the thickness of a coating by spreading or distributing liquids or other fluent materials already applied to the coated surface with blades
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- B05C5/00—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work
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- C—CHEMISTRY; METALLURGY
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- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
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Abstract
Description
本発明の一実施の形態における有機半導体薄膜の製造方法について、図1A〜図1Cを参照して説明する。この製造方法によれば、有機半導体材料を溶媒に溶解させた原料溶液を基板1上に供給する。そして、溶媒を蒸発させることにより有機半導体材料の結晶を析出させて、有機半導体薄膜を基板上に形成する。図1Aは、有機半導体薄膜アレイの製造方法の工程に用いる装置を示す断面図である。図1B〜図1Dは、同製造方法の工程の状態を順次示す断面図、図1Eは、図1Cに示した状態の平面図である。なお、図1Eにおいて、一部の要素に付したドットは、各要素を判別し易くするためであって、断面を示すものではない。
2、8、9 端面成形部材
2a、8a、9a、21a、25a 接触面
3 表面改質層
4、4a〜4c 溶液供給ノズル
5 ホットプレート
6 原料溶液
6a、22 液滴
7a 結晶
7、23、23a 有機半導体薄膜
10 TFT素子
21 端面接触部材
24 補助基板
25 接触凸部
26 接触部材
Claims (11)
- 有機半導体材料を溶媒に溶解させた原料溶液を基板上に供給し、前記溶媒を蒸発させることにより前記有機半導体材料の結晶を析出させて、有機半導体薄膜を前記基板上に形成する有機半導体薄膜の製造方法において、
一側面に接触面が設けられた端面成形部材を用い、
前記基板の表面に対して前記接触面が一定の角度で交差するように前記端面成形部材を対向させて配置して、前記原料溶液を前記基板上に供給して前記接触面に接触する前記原料溶液の液滴を形成し、
前記基板の表面に平行な方向であって前記液滴から前記端面成形部材が離間する向きに前記基板と前記端面成形部材とを相対移動させ、かつ、前記相対移動に伴う前記液滴の大きさの変動が所定の範囲に維持されるように前記原料溶液を供給しながら、前記液滴中の前記溶媒を蒸発させて前記接触面が移動した後の前記基板上に前記有機半導体薄膜を形成することを特徴とする有機半導体薄膜の製造方法。 - 前記液滴を、前記接触面から遠ざかるに従って基板面からの厚さが漸減する形状に形成する請求項1に記載の有機半導体薄膜の製造方法。
- 前記原料溶液の液滴を形成する前記基板の表面は、接触角が30°以下である請求項1または2に記載の有機薄膜半導体装置の製造方法。
- 前記端面成形部材を前記基板との間に一定の間隙を設けて対向させて、前記接触面の反対側に前記間隙に隣接させて配置した一個または複数個の原料溶液供給口から前記間隙を通して前記原料溶液を供給する請求項1〜3のいずれか1項に記載の有機半導体薄膜の製造方法。
- 複数個の前記原料溶液供給口を配置し、各々の前記原料溶液供給口から互いに異なる種類の前記原料溶液を供給することにより、同一の前記基板上に異なる種類の有機半導体薄膜を同時に形成する、請求項4に記載の有機半導体薄膜製造方法。
- 前記端面成形部材の内部に設けた一個または複数個の内腔を通して、前記接触面の側に前記原料溶液を供給する請求項1〜3のいずれか1項に記載の有機半導体薄膜の製造方法。
- 前記端面成形部材を前記基板との間に一定の間隙を設けて対向させて、前記端面成形部材の内部に設けた一個または複数個の内腔を通して、前記端面形成部材の直下に前記原料溶液を供給する請求項1〜3のいずれか1項に記載の有機半導体薄膜の製造方法。
- 前記端面成形部材の内腔が複数個設けられ、各々の前記内腔を通して、互いに異なる種類の前記原料溶液を供給することにより、同一の前記基板上に異なる種類の有機半導体薄膜を同時に形成する、請求項7に記載の有機半導体薄膜製造方法。
- 基板と、その表面上に形成された有機半導体薄膜とを備えた有機半導体装置において、
前記有機半導体薄膜は、一辺の大きさが1cm以上の大きさの矩形の平面形状を有し、厚さが100nm以下の単結晶薄膜であることを特徴とする有機半導体装置。 - 前記有機半導体薄膜は、単結晶の結晶軸の分布が8°の範囲内にある請求項9に記載の有機半導体装置。
- 前記基板の前記有機半導体薄膜が形成された表面は、接触角が30°以下である請求項9または10に記載の有機半導体装置。
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JP6259390B2 (ja) * | 2014-12-11 | 2018-01-10 | 富士フイルム株式会社 | 有機トランジスタの製造方法、有機トランジスタ |
JP6274529B2 (ja) * | 2015-02-09 | 2018-02-07 | 富士フイルム株式会社 | 有機半導体素子及びその製造方法、有機半導体膜形成用組成物、並びに、有機半導体膜の製造方法 |
JP6483265B2 (ja) | 2015-08-04 | 2019-03-13 | 富士フイルム株式会社 | 有機薄膜トランジスタ及びその製造方法、有機薄膜トランジスタ用材料、有機薄膜トランジスタ用組成物、化合物、並びに、有機半導体膜 |
JP6561123B2 (ja) | 2015-08-04 | 2019-08-14 | 富士フイルム株式会社 | 有機薄膜トランジスタ、有機薄膜トランジスタの製造方法、有機薄膜トランジスタ用材料、有機薄膜トランジスタ用組成物、有機半導体膜、化合物 |
EP3333917B1 (en) | 2015-08-04 | 2022-04-06 | FUJIFILM Corporation | Organic thin film transistor, method for manufacturing organic thin film transistor, material for organic thin film transistors, composition for organic thin film transistors, organic semiconductor film, and compound |
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