JP6345247B2 - ダイヤモンドをサーマルビア内に選択的に蒸着させる方法 - Google Patents
ダイヤモンドをサーマルビア内に選択的に蒸着させる方法 Download PDFInfo
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- 229910003460 diamond Inorganic materials 0.000 title claims description 108
- 239000010432 diamond Substances 0.000 title claims description 108
- 238000000034 method Methods 0.000 title claims description 48
- 238000000151 deposition Methods 0.000 title claims description 33
- 239000010410 layer Substances 0.000 claims description 130
- 239000000758 substrate Substances 0.000 claims description 95
- 239000004065 semiconductor Substances 0.000 claims description 40
- 230000006911 nucleation Effects 0.000 claims description 31
- 238000010899 nucleation Methods 0.000 claims description 31
- 239000000463 material Substances 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 11
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 9
- 235000012239 silicon dioxide Nutrition 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 239000002113 nanodiamond Substances 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 5
- 239000011241 protective layer Substances 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 39
- 229910002601 GaN Inorganic materials 0.000 description 38
- 235000012431 wafers Nutrition 0.000 description 15
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000010292 electrical insulation Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002918 waste heat Substances 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Description
Claims (20)
- 半導体デバイスを製造する方法において、
正面側部と、裏側部とを含む半導体基板を提供するステップと、
半導体エピタキシャル層を半導体基板の正面側部上に蒸着させるステップと、
少なくとも1つのサーマルビアを半導体基板の裏側部内にエッチングするステップと、
ダイヤモンド核生成シード層を半導体基板の裏側部の全体にわたって蒸着させ、ダイヤモンド核生成層が基板の裏側部の平面状部分の上にてかつその側壁部を含む少なくとも1つのサーマルビア内にて蒸着されるようにするステップと、
マスク層をダイヤモンド核生成層の上に蒸着させるステップと、
基板の裏側部の平面状部分上のサーマルビアの外側にてマスク層の一部を除去し、マスク材料のみがサーマルビア内に残るようにするステップと、
少なくとも1つのサーマルビアの外側にて前記基板の平面状部分上のダイヤモンド核生成層の一部を除去するステップと、
サーマルビア内のマスク材料の残りの部分を除去するステップと、
ダイヤモンドがサーマルビア内にて形成されるのは許容するが、基板の裏側部の平面状部分の上にて形成されるのは許容しない仕方にて、サーマルビア内にてバルクダイヤモンド層をダイヤモンド核生成層の残りの部分上に蒸着させるステップと、
デバイス層をエピタキシャル層の上にて製造するステップとを備える、半導体デバイスを製造する方法。 - 請求項1に記載の方法において、
前記半導体デ基盤を提供するステップは、炭化ケイ素基板を提供するステップを含む、方法。 - 請求項1に記載の方法において、
前記エピタキシャル層を基板上に蒸着させるステップは、GaNエピタキシャル層を基板の上にて成長させるステップを含む、方法。 - 請求項1に記載の方法において、
前記サーマルビアをエッチングする前に、誘電性保護層をエピタキシャル層上に蒸着させるステップを更に備える、方法。 - 請求項4に記載の方法において、
前記保護層を蒸着させるステップは、窒化ケイ素(SiN)層、二酸化ケイ素(SiO2)層又はそれらの組み合わせを蒸着させるステップを含む、方法。 - 請求項1に記載の方法において、
前記ダイヤモンド核生成シード層を蒸着させるステップは、ダイヤモンド核生成シード層を0.1−2マイクロメートルの範囲の厚さにて蒸着させるステップを含む、方法。 - 請求項1に記載の方法において、
前記ダイヤモンド核生成シード層を蒸着させ、かつバルクダイヤモンド層を蒸着させるステップは、ナノ結晶又は多結晶のダイヤモンド核生成シード層を蒸着させるステップを含む、方法。 - 請求項1に記載の方法において、
前記マスク層の一部を除去するステップは、化学機械的研磨法を使用するステップを含む、方法。 - 請求項1に記載の方法において、
前記ダイヤモンドシード層の一部を除去するステップは、酸素による反応性イオンエッチング法を使用するステップを含む、方法。 - 請求項1に記載の方法において、
前記ダイヤモンドシード層の一部を除去するステップは、サーマルビアのリップ部の周りにてダイヤモンド層の一部を除去し、ダイヤモンドシード層がマスク層の後側にて凹部を形成するステップを含む、方法。 - 請求項10に記載の方法において、
前記サーマルビアのリップ部の周りにてダイヤモンドシード層の一部を除去するステップは、高温度酸化熱エッチング法を使用するステップを含む、方法。 - 請求項10に記載の方法において、
前記サーマルビアのリップ部の周りにてダイヤモンドシード層の一部を除去するステップは、基板の裏側部の平面状部分からダイヤモンドシード層を除去する過程と異なる過程を使用するステップを含む、方法。 - 請求項1に記載の方法において、
前記サーマルビアのエッチン後であってかつ前記ダイヤモンド核生成シード層を基板の上に蒸着させる前に、ナノダイヤモンド粒子層を基板上に形成するステップを更に含む、方法。 - 請求項1に記載の方法において、
前記半導体デバイス層を製造するステップは、デバイス層をサーマルビアと整合させるステップを含む、方法。 - 請求項1に記載の方法において、
前記半導体デバイスは、高電子移動度トランジスタである、方法。 - GaN高電子移動度トランジスタを製造する方法において、
正面側部と、裏側部とを含む半導体基板を提供するステップと、
半導体エピタキシャル層を半導体基板の正面側部上に蒸着させるステップと、
少なくとも1つのサーマルビアを半導体基板の裏側部内にエッチングするステップと、
ナノダイヤモンド粒子層を基板上に形成するステップと、
ダイヤモンド核生成シード層を半導体基板の裏側部の全体にわたって蒸着させ、ダイヤモンド核生成層が基板の裏側部の平面状部分上に且つその側壁部を含む少なくとも1つのサーマルビア内にて蒸着されるようにするステップと、
マスク層をダイヤモンド核生成層の上に蒸着させるステップと、
基板の裏側部の平面状部分上のサーマルビアの外側にてマスク層の一部を除去し、マスク材料のみがサーマルビア内に残るようにするステップと、
少なくとも1つのサーマルビアの外側にて基板の平面状部分上のダイヤモンド核生成層の一部を除去するステップであって、前記ダイヤモンドシード層の一部を除去するステップは、サーマルビアのリップ部の周りにてダイヤモンド層の一部を除去し、ダイヤモンドシード層がマスク層の後方にて凹部を形成するステップと、
サーマルビア内のマスク材料の残りの部分を除去するステップと、
ダイヤモンドがサーマルビア内にて形成されるのを許容するが、基板の裏側部の平面状部分の上に形成されるのは許容しない仕方にて、サーマルビア内にてバルクダイヤモンド層をダイヤモンド核生成層の残りの部分上に蒸着させるステップと、
デバイス層をエピタキシャル層の上に製造するステップとを備える、方法。 - 請求項16に記載の方法において、
前記サーマルビアをエッチングする前に、誘電性保護層をエピタキシャル層上に蒸着させるステップを更に備える、方法。 - 請求項16に記載の方法において、
前記ダイヤモンド核生成シード層を蒸着させるステップは、ダイヤモンド核生成シード層を0.1−2マイクロメートルの範囲の厚さにて蒸着させるステップを含む、方法。 - 請求項16に記載の方法において、
前記ダイヤモンド核生成シード層を蒸着させ、かつバルクダイヤモンド層を蒸着させるステップは、ナノ結晶又は多結晶のダイヤモンド核生成シード層を蒸着させるステップを含む、方法。 - 半導体デバイスを製造する方法において、
正面側部と、裏側部とを含む半導体基板を提供するステップと、
GaNエピタキシャル層を半導体基板の正面側部上に蒸着させるステップと、
少なくとも1つのサーマルビアを半導体基板の裏側部内にエッチングするステップと、
ダイヤモンド核生成シード層を半導体基板の裏側部の全体にわたって蒸着させ、ダイヤモンド核生成層が基板の裏側部の平面状部分上にかつその側壁部を含む少なくとも1つのサーマルビア内にて蒸着されるようにするステップであって、前記ダイヤモンド核生成層を蒸着させるステップは、ダイヤモンド核生成シード層を0.1−2マイクロメートルの範囲の厚さに蒸着させるステップを含む前記蒸着ステップと、
マスク層をダイヤモンド核生成層上に蒸着させるステップと、
基板の裏側部の平面状部分上のサーマルビアの外側にてマスク層の一部を除去し、マスク材料のみがサーマルビア内に残るようにするステップと、
少なくとも1つのサーマルビアの外側にて基板の平面状部分上のダイヤモンド核生成層の一部を除去するステップと、
サーマルビア内のマスク材料の残りの部分を除去するステップと、
ダイヤモンドがサーマルビア内にて形成されるのは許容するが、基板の裏側部の平面状部分上に形成されるのは許容しない仕方にて、サーマルビア内にてバルクダイヤモンド層をダイヤモンド核生成層の残りの部分上に蒸着させるステップと、とを備える、方法。
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