CN109742026B - 直接生长法制备金刚石辅助散热碳化硅基底GaN-HEMTs的方法 - Google Patents
直接生长法制备金刚石辅助散热碳化硅基底GaN-HEMTs的方法 Download PDFInfo
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Abstract
直接生长法制备金刚石辅助散热碳化硅基底GaN‑HEMTs的方法,本发明涉及金刚石与碳化硅连接的散热结构的制备方法,它为了解决现有GaN HEMTs的散热性能有待提高的问题。制备金刚石辅助散热碳化硅基底的方法:一、在SiC基片表面刻蚀出孔洞;二、超声清洗SiC基片;三、在SiC晶片的表面建立辅助形核点;四、沉积金刚石层;五、将上表面的金刚石膜层去掉,留下孔洞中金刚石膜层;六、超声清洗;七、在SiC晶片上的孔洞中进行沉积,金刚石沉积填满孔洞。本发明制备金刚石的纯度高,热导率较高,金刚石与SiC结构类似,相容性好,制备的金刚石位于器件下方,有针对性地将热点热量极快导出。
Description
技术领域
本发明涉及金刚石与碳化硅连接的散热结构的制备方法。
背景技术
由于现在器件的发展迅速,电子器件的频率与集成度越来越高,因此产热的集中性也越来越高,器件产热对于工作的稳定性不容忽视。因此,如何高效,快速的将热量导出,成为业界研究的重点。对于导热材料的要求,便愈发急迫。热导率(thermal conductivity)便是描述材料导热性能的关键参数,高热导率材料的制备,是电子器件前进路上必不可少的一环。
GaN作为第三代半导体材料的代表,是现在及将来许多半导体器件的主要制备材料。但是,GaN的热导率只有220W/(m·K),现GaNHEMTs晶圆基底一般为碳化硅(SiC),其热导率仅约400W/(m·K)。在半导体器件的使用过程中会有大量热量产生,影响器件运行效率,现有GaN器件功率密度在10W/mm以下,而其极限为60W/mm,并随着电子器件频率的提升,热量积聚的问题会尤为凸显,因此,如何解决GaN器件的散热问题,制备一种新型的散热结构是重中之重。
而金刚石拥有着众多优异性质:在室温下的热导率极高,达2200W/(m·K)、且电阻率较高、稳定性好,是作为散热材料的极好选择,现有最优GaNHEMTs散热方法最优方法为金刚石基GaNHEMTs,但是其制备工艺复杂,生产成本高,并需要推翻现有产线结构。
发明内容
本发明的目的是为了解决现有GaN HEMTs的散热性能有待提高的问题,而提供一种金刚石与SiC基底复合散热结构的制备方法。
本发明直接生长法制备金刚石辅助散热碳化硅基底GaN-HEMTs的方法按以下步骤实现:
一、利用激光刻蚀或者金属镀层刻蚀方法在SiC基片表面刻蚀出孔洞,孔洞位置位于GaN-HEMTs下方,孔洞的深度为100~400μm,得到含有孔洞结构的SiC晶片;
二、将含有孔洞结构的SiC晶片依次置于无水乙醇和去离子水中进行超声清洗,得到清洗后含有孔洞结构的SiC晶片;
三、在步骤二清洗后含有孔洞结构的SiC晶片的表面旋涂纳米金刚石悬浮液,得到建立辅助形核点的SiC晶片;
四、将建立辅助形核点的SiC晶片置于MPCVD装置中沉积金刚石层,通入氢气与甲烷气体,控制氢气流量100~300sccm,甲烷流量5~30sccm,沉积气压100~300mBar,沉积温度700~900℃,持续1~4h,得到带有金刚石形核膜层的SiC晶片;
五、对带有金刚石形核膜层的SiC晶片进行抛光,将上表面的金刚石膜层去掉,留下孔洞中金刚石膜层,得到孔洞中带有金刚石膜层的SiC晶片;
六、将孔洞中带有金刚石膜层的SiC晶片依次置于无水乙醇和去离子水中进行超声清洗,得到清洗后孔洞中带有金刚石膜层的SiC晶片;
七、将步骤六得到的清洗后孔洞中带有金刚石膜层的SiC晶片置入MPCVD装置中进行沉积,只在SiC晶片上的孔洞中进行沉积,通入氢气与甲烷气体,控制氢气流量100~300sccm,甲烷流量5~30sccm,沉积气压100~300mBar,沉积温度700~900℃,沉积填满孔洞,完成金刚石辅助散热GaN-HEMTs碳化硅基底的制备。
本发明利用MPCVD方法在SiC基底内部制备金刚石散热结构,用以解决SiC基GaN器件的散热问题,针对GaNHEMTs的热点,将热量精准导出。
本发明所述的直接生长法制备金刚石辅助散热碳化硅基底GaN-HEMTs的方法包含以下有益效果:
1、制备金刚石的纯度高,热导率较高,随金刚石生长厚度增加可达1400W/(m·K);
2、制备的金刚石与SiC结构类似,相容性好结合力较高;
3、制备的金刚石位于器件下方,孔洞深度为距离GaN较近为宜,可有针对性地将热点热量极快导出;
4、保留SiC基底,可继续利用现有制备生产线,无需对产线重新投产。
附图说明
图1为实施例一得到的金刚石辅助散热GaN-HEMTs碳化硅基底的电镜图。
具体实施方式
具体实施方式一:本实施方式直接生长法制备金刚石辅助散热碳化硅基底GaN-HEMTs的方法按以下步骤实施:
一、利用激光刻蚀或者金属镀层刻蚀方法在SiC基片表面刻蚀出孔洞,孔洞位置位于GaNHEMTs下方,孔洞的深度为100~400μm,得到含有孔洞结构的SiC晶片;
二、将含有孔洞结构的SiC晶片依次置于无水乙醇和去离子水中进行超声清洗,得到清洗后含有孔洞结构的SiC晶片;
三、在步骤二清洗后含有孔洞结构的SiC晶片的表面旋涂纳米金刚石悬浮液,得到建立辅助形核点的SiC晶片;
四、将建立辅助形核点的SiC晶片置于MPCVD装置中沉积金刚石层,通入氢气与甲烷气体,控制氢气流量100~300sccm,甲烷流量5~30sccm,沉积气压100~300mBar,沉积温度700~900℃,持续1~4h,得到带有金刚石形核膜层的SiC晶片;
五、对带有金刚石形核膜层的SiC晶片进行抛光,将上表面的金刚石膜层去掉,留下孔洞中金刚石膜层,得到孔洞中带有金刚石膜层的SiC晶片;
六、将孔洞中带有金刚石膜层的SiC晶片依次置于无水乙醇和去离子水中进行超声清洗,得到清洗后孔洞中带有金刚石膜层的SiC晶片;
七、将步骤六得到的清洗后孔洞中带有金刚石膜层的SiC晶片置入MPCVD装置中进行沉积,只在SiC晶片上的孔洞中进行沉积,通入氢气与甲烷气体,控制氢气流量100~300sccm,甲烷流量5~30sccm,沉积气压100~300mBar,沉积温度700~900℃,沉积填满孔洞,完成金刚石辅助散热GaN-HEMTs碳化硅基底的制备。
本实施方式在SiC晶片的上表面设置GaNHEMTs器件,在SiC晶片的下表面刻蚀出孔洞。
本实施方式步骤五将上表面的金刚石膜层去掉,仅留孔洞内部金刚石,以此作为步骤七中第二次生长金刚石的“种子”,从而仅在孔洞内部生长出金刚石。
本实施方式针对器件的“热点”,利用微波等离子体辅助化学气相沉积(MPCVD)法将金刚石散热柱布局在热点下方,将热量迅速散出。
具体实施方式二:本实施方式与具体实施方式一不同的是步骤一中孔洞的长为100~300μm,孔洞的宽为100~300μm。
具体实施方式三:本实施方式与具体实施方式一或二不同的是步骤二将含有孔洞结构的SiC晶片依次置于无水乙醇和去离子水中分别进行超声清洗15min。
具体实施方式四:本实施方式与具体实施方式一至三之一不同的是步骤三中所述金刚石悬浮液中金刚石粒度为10~50nm。
具体实施方式五:本实施方式与具体实施方式一至四之一不同的是步骤三替换为将步骤二清洗后含有孔洞结构的SiC晶片置于纳米金刚石悬浮液中超声分散,得到建立辅助形核点的SiC晶片。
具体实施方式六:本实施方式与具体实施方式一至五之一不同的是步骤四中通入氢气与甲烷气体,控制氢气流量150sccm,甲烷流量5sccm,沉积气压150mBar,沉积温度800℃,持续2h。
具体实施方式七:本实施方式与具体实施方式一至六之一不同的是步骤五采用机械抛光方法或化学辅助机械抛光法对带有金刚石形核膜层的SiC晶片进行抛光。
具体实施方式八:本实施方式与具体实施方式七不同的是控制抛光盘的转速1000~4000rpm/min。
具体实施方式九:本实施方式与具体实施方式一至八之一不同的是步骤六将孔洞中带有金刚石膜层的SiC晶片依次置于无水乙醇和去离子水中分别进行超声清洗20min。
具体实施方式十:本实施方式与具体实施方式一至九之一不同的是步骤七通入氢气与甲烷气体,控制氢气流量150sccm,甲烷流量10sccm,沉积气压200mBar,沉积温度800℃。
实施例一:本实施例直接生长法制备金刚石辅助散热碳化硅基底GaN-HEMTs的方法按以下步骤实施:
一、利用金属镀层刻蚀方法在SiC基片表面刻蚀出孔洞,孔洞位置位于GaNHEMTs下方,孔洞长×宽为100×300μm,孔洞深度180μm,得到含有孔洞结构的SiC晶片;
二、将含有孔洞结构的SiC晶片依次置于无水乙醇和去离子水中进行超声清洗15min,得到清洗后含有孔洞结构的SiC晶片;
三、将步骤二清洗后含有孔洞结构的SiC晶片置于纳米金刚石粒度30纳米的纳米金刚石悬浮液中超声分散30min,得到建立辅助形核点的SiC晶片;
四、将建立辅助形核点的SiC晶片置于MPCVD装置中沉积金刚石层,通入氢气与甲烷气体,控制氢气流量150sccm,甲烷流量5sccm,沉积气压150mBar,沉积温度800℃,持续2h,得到带有金刚石形核膜层的SiC晶片;
五、对带有金刚石形核膜层的SiC晶片进行机械抛光,控制抛光盘转速3000rpm/min,将上表面的金刚石膜层去掉,留下孔洞中金刚石膜层,得到孔洞中带有金刚石膜层的SiC晶片;
六、将孔洞中带有金刚石膜层的SiC晶片依次置于无水乙醇和去离子水中分别进行超声清洗30min,得到清洗后孔洞中带有金刚石膜层的SiC晶片;
七、将步骤六得到的清洗后孔洞中带有金刚石膜层的SiC晶片置入MPCVD装置中进行沉积,只在SiC晶片上的孔洞中进行沉积,通入氢气与甲烷气体,控制氢气流量150sccm,甲烷流量10sccm,沉积气压150mBar,沉积温度800℃,持续50h,沉积填满孔洞,完成金刚石辅助散热GaN-HEMTs碳化硅基底的制备。
本实施例制备金刚石的纯度高,热导率较高,孔洞内金刚石的热导率能达到1000W/(m·K)以上。
Claims (7)
1.直接生长法制备金刚石辅助散热碳化硅基底GaN-HEMTs的方法,其特征在于该方法按以下步骤实现:
一、利用激光刻蚀或者金属镀层刻蚀方法在SiC基片表面刻蚀出孔洞,孔洞位置位于GaN-HEMTs下方,孔洞的深度为100~400μm,得到含有孔洞结构的SiC晶片;
二、将含有孔洞结构的SiC晶片依次置于无水乙醇和去离子水中进行超声清洗,得到清洗后含有孔洞结构的SiC晶片;
三、在步骤二清洗后含有孔洞结构的SiC晶片的表面旋涂纳米金刚石悬浮液,金刚石悬浮液中金刚石粒度为10~50nm,得到建立辅助形核点的SiC晶片;
四、将建立辅助形核点的SiC晶片置于MPCVD装置中沉积金刚石层,通入氢气与甲烷气体,控制氢气流量150sccm,甲烷流量5sccm,沉积气压150mBar,沉积温度800℃,持续2h,得到带有金刚石形核膜层的SiC晶片;
五、对带有金刚石形核膜层的SiC晶片进行抛光,将上表面的金刚石膜层去掉,留下孔洞中金刚石膜层,得到孔洞中带有金刚石膜层的SiC晶片;
六、将孔洞中带有金刚石膜层的SiC晶片依次置于无水乙醇和去离子水中进行超声清洗,得到清洗后孔洞中带有金刚石膜层的SiC晶片;
七、将步骤六得到的清洗后孔洞中带有金刚石膜层的SiC晶片置入MPCVD装置中进行沉积,只在SiC晶片上的孔洞中进行沉积,通入氢气与甲烷气体,控制氢气流量150sccm,甲烷流量10sccm,沉积气压200mBar,沉积温度800℃,沉积填满孔洞,完成金刚石辅助散热GaN-HEMTs碳化硅基底的制备。
2.根据权利要求1所述的直接生长法制备金刚石辅助散热碳化硅基底GaN-HEMTs的方法,其特征在于步骤一中孔洞的长为100~300μm,孔洞的宽为100~300μm。
3.根据权利要求1所述的直接生长法制备金刚石辅助散热碳化硅基底GaN-HEMTs的方法,其特征在于步骤二将含有孔洞结构的SiC晶片依次置于无水乙醇和去离子水中分别进行超声清洗15min。
4.根据权利要求1所述的直接生长法制备金刚石辅助散热碳化硅基底GaN-HEMTs的方法,其特征在于步骤三替换为将步骤二清洗后含有孔洞结构的SiC晶片置于纳米金刚石悬浮液中超声分散,得到建立辅助形核点的SiC晶片。
5.根据权利要求1所述的直接生长法制备金刚石辅助散热碳化硅基底GaN-HEMTs的方法,其特征在于步骤五采用机械抛光方法或化学辅助机械抛光法对带有金刚石形核膜层的SiC晶片进行抛光。
6.根据权利要求5所述的直接生长法制备金刚石辅助散热碳化硅基底GaN-HEMTs的方法,其特征在于控制抛光盘的转速1000~4000rpm/min。
7.根据权利要求1所述的直接生长法制备金刚石辅助散热碳化硅基底GaN-HEMTs的方法,其特征在于步骤六将孔洞中带有金刚石膜层的SiC晶片依次置于无水乙醇和去离子水中分别进行超声清洗20min。
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