CN114142338A - 一种改善蓝、绿光半导体激光器散热性能的方法 - Google Patents
一种改善蓝、绿光半导体激光器散热性能的方法 Download PDFInfo
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Abstract
本发明公开了一种改善蓝、绿光半导体激光器散热性能的方法。通过对衬底打盲孔或通孔的处理方式,在孔内引入金刚石,获得金刚石嵌入式衬底,显著提高衬底导热能力。在该衬底上外延生长蓝、绿光激光器垂直结构,得到强散热、高效率的蓝、绿光激光器。本发明采用的处理方法具有工艺稳定、成本低廉、成品率高、设备简单易操作、适合产业化生产等优点。
Description
技术领域
本发明涉及半导体器件技术领域,具体涉及一种通过向衬底填充金刚石材料改善蓝、绿光激光器散热性能的方法。
背景技术
氮化镓GaN及其合金因禁带宽度大、电子迁移率高等优点,在5g通讯、航天航空、国防科技等领域具有良好的应用前景。而随着相关微波功率器件体积减小、功率密度增大,热管理问题成为制约集成电路行业进一步发展的主要技术瓶颈之一。蓝、绿光半导体激光器性能受衬底低热导限制,传统硅、蓝宝石衬底散热问题得不到有效解决。金刚石作为固体材料中热导率最高(达2200W/m/K)的材料,是改善蓝、绿光半导体激光器散热性能的理想选择。
发明内容
针对现有蓝、绿光半导体激光器存在的散热问题,本发明提出了一种在衬底背面打孔后填充金刚石的方式,在不影响垂直器件制备的情况下,优化衬底导热性能,改善器件散热特性。
本发明的技术方案如下:
一种改善蓝、绿光半导体激光器散热性能的方法,其特征是,在金刚石填充的衬底上制备蓝、绿光半导体激光器,所述金刚石填充的衬底通过下述步骤制备得到:
1)在GaN衬底或SiC衬底表面沉积一定厚度的SiO2保护层;
2)在衬底背面打孔,打孔方向为沿平行衬底解理边的方向,打孔深度为衬底厚度或者衬底厚度减去10~20微米,孔直径为50~100微米,孔与孔之间的间距(前后左右)为20~50微米;
3)在孔内生长金刚石;
4)去掉衬底背面多余的金刚石和表面的SiO2保护层,得到金刚石填充的衬底。
在步骤1)中,先对GaN衬底或SiC衬底进行化学清洗,化学清洗可以依次采用甲苯溶液、丙酮溶液、乙醇溶液和去离子水超声清洗衬底,除去衬底表面的有机物及颗粒沾污,并用氮气枪吹干。SiO2保护层可以通过等离子体增强化学气相沉积法(PECVD)制备,沉积厚度为100~200纳米。
在步骤2)中,沿特定方向在衬底背面进行激光打孔,激光波长优选为355nm,并对激光打孔后的GaN衬底或SiC衬底进行化学清洗。
其中,打孔方案可以有以下两种:方案1,打盲孔,打孔深度为衬底厚度减去10~20微米,打孔直径为50至100微米,打孔间距(前后左右)为20~50微米;方案2,打通孔,打孔深度为衬底厚度,直至将衬底打穿,但不能打穿SiO2保护层,打孔直径为50至100微米,打孔间距(前后左右)为20~50微米。
打孔后的化学清洗依次采用甲苯溶液、丙酮溶液、乙醇溶液和去离子水超声清洗衬底,除去衬底表面的有机物及颗粒沾污,并用氮气枪吹干。
在步骤3)中,可以先在孔内撒入纳米金刚石种子再通过微波等离子体化学气相沉积(MPCVD)的方法外延生长金刚石,或者直接通过MPCVD外延生长金刚石。
在步骤4)中,对GaN衬底或SiC衬底背面多余的金刚石进行减薄抛光处理,直至衬底背面全部露出;通过BOE溶液对衬底表面SiO2保护层进行腐蚀,直至全部腐蚀完成;然后对衬底进行化学清洗,化学清洗即依次采用甲苯溶液、丙酮溶液、乙醇溶液和去离子水超声清洗衬底,除去衬底表面的有机物及颗粒沾污,并用氮气枪吹干。
在金刚石填充的n型GaN衬底或SiC衬底上通过金属有机化合物化学气相沉积(MOCVD)方法外延生长蓝、绿光激光器结构,包括从下到上依次层叠的未掺杂GaN或n-GaN再生长外延层、n-AlGaN或n-AlGaN/n-GaN超晶格下限制层、未掺杂InGaN或n-InGaN下波导层或n-InGaN/n-GaN下双波导层、低温未掺杂GaN或未掺杂InGaN插入层、InGaN/GaN或InGaN/InGaN量子阱结构、未掺杂GaN或未掺杂InGaN上保护层、未掺杂InGaN上波导层或未掺杂InGaN/GaN上双波导层、p-AlGaN或p-AlGaN/p-GaN超晶格电子阻挡层、p-AlGaN或p-AlGaN/p-GaN超晶格上限制层、极化诱导p-AlGaN或p-NiO外延层、p++-GaN或p-InGaN欧姆接触层。生长结束后取出蓝、绿光激光器外延片,进行后续工艺处理。
MOCVD外延生长蓝、绿光激光器结构时,依据外延质量及器件性能决定,依次进行如下操作:
在800~1050℃外延生长600纳米~2微米未掺杂GaN外延层或600纳米~2微米以SiH4作为掺杂剂的N掺杂GaN外延层,掺杂浓度为1E18cm-3至5E18cm-3;
在1050~1100℃外延生长Al组分5~10%,厚度1~2微米的n-AlGaN下限制层或Al组分16~20%,厚度2.5纳米/2.5纳米的n-AlGaN/n-GaN超晶格下限制层,以上外延层霍尔电子浓度为1E18cm-3~5E18cm-3;
在785~820℃外延生长In组分1~3%的未掺杂InGaN或n-InGaN下波导层,或In组分1~3%的n-InGaN/n-GaN下双波导层结构,降低光损耗,以上生长厚度依据蓝绿激光器激射条件决定,通常蓝绿激光器下波导层厚度为110~500纳米;
为改善后续外延生长量子阱结构的表面平整度,外延生长厚度2~3纳米的低温未掺杂GaN或In组分为1~2%的未掺杂InGaN层,In组分与InGaN势垒一致,外延生长温度与量子阱生长温度一致;
外延生长1~3对3纳米/15纳米InGaN/GaN或InGaN/InGaN量子阱结构,其中InGaN势垒中In组分为1~2%,外延生长温度依据蓝绿光发光波长决定;
外延生长未掺杂GaN或未掺杂InGaN上保护层,生长温度、厚度及组分与量子阱势垒结构一致;
在720~740℃外延生长In组分1~3%的未掺杂InGaN上波导层,或In组分1~3%的未掺杂InGaN/GaN上双波导层结构,降低光损耗,以上生长厚度依据蓝绿激光器激射条件决定,通常蓝绿激光器上波导层厚度为110~500纳米;
依据器件性能,为了保护量子阱结构,在900~920℃外延生长Al组分为20~40%,厚度20~40纳米的p-AlGaN电子阻挡层(Cp2Mg作为掺杂剂);或为了降低器件电压,外延生长Al组分20~30%,厚度2.5/2.5纳米,4~10个周期的p-AlGaN/p-GaN超晶格结构;
在900~920℃外延生长Al组分5~10%,厚度0.5~1微米的p-AlGaN上限制层或Al组分16~20%,厚度2.5纳米/2.5纳米的p-AlGaN/p-GaN超晶格上限制层,以上外延层霍尔空穴浓度为5E17cm-3~2E18cm-3;
为增加空穴注入并改善器件电学特性,针对Ga极性激光器,在900~920℃外延生长Al组分由30%线性渐变至0%,厚度60纳米的p-AlGaN极化诱导层,霍尔空穴浓度为1E18cm-3~2E18cm-3;或通过磁控溅射方式溅射厚度60纳米的高p型p-NiO材料,空穴浓度达1E19cm-3以上;
在920~940℃外延生长厚度5~10纳米,霍尔空穴浓度为1E21cm-3的p++-GaN重掺层;或在800~820℃外延生长,In组分为10~20%,厚度5~10纳米,霍尔空穴浓度为1E20cm-3的p-InGaN欧姆接触层。
本发明提供的改善蓝、绿光半导体激光器散热性能的方法,通过对衬底打盲孔或通孔的处理方式,在孔内引入金刚石,获得金刚石嵌入式衬底,显著提高了衬底的导热能力。在该衬底上外延生长蓝、绿光激光器垂直结构,得到强散热、高效率的蓝、绿光激光器。本发明采用的方法还具有工艺稳定、成本低廉、成品率高、设备简单易操作、适合产业化生产等优点。
附图说明
图1为对衬底打通孔的结构示意图,其中(a)为俯视图,(b)为侧视图。
图2为对衬底打盲孔的结构示意图,其中(a)为俯视图,(b)为侧视图。
具体实施方式
下面结合附图,通过具体实施例进一步阐述本发明,但不以任何方式限制本发明的保护范围。
实施例一
本实施例提供一种衬底填充金刚石材料的蓝、绿光激光器,包括从下到上依次层叠设置在金刚石填充GaN或SiC(n-Type)衬底上的未掺杂GaN或n-GaN再生长外延层、n-AlGaN或n-AlGaN/n-GaN超晶格下限制层、未掺杂InGaN或n-InGaN下波导层或n-InGaN/n-GaN下双波导层、低温未掺杂GaN或未掺杂InGaN插入层、InGaN/GaN或InGaN/InGaN量子阱结构、未掺杂GaN或未掺杂InGaN上保护层、未掺杂InGaN上波导层或未掺杂InGaN/GaN上双波导层、p-AlGaN或p-AlGaN/p-GaN超晶格电子阻挡层、p-AlGaN或p-AlGaN/p-GaN超晶格上限制层、极化诱导p-AlGaN或p-NiO外延层、p++-GaN或p-InGaN欧姆接触层。
该衬底填充金刚石材料的蓝、绿光激光器通过如下步骤制备得到:
1)在化学清洗后的GaN或SiC(n-Type)衬底表面通过PECVD方法沉积100~200纳米厚的SiO2保护层
2)在GaN或SiC(n-Type)衬底背面进行激光打盲孔,打孔方向为沿平行衬底解理边的方向,打孔深度为衬底厚度减去10或20微米,打孔直径为50至100微米,打孔间距(前后左右)为20~50微米,打孔后进行化学清洗,衬底示意图如图2所示。。
3)先在所打孔内撒入纳米金刚石种子再进行MPCVD外延生长,或直接通过MPCVD外延生长金刚石。
4)对GaN或SiC(n-Type)衬底背面多余的金刚石进行减薄抛光处理,直至衬底背面全部露出;用BOE溶液腐蚀衬底表面SiO2,直至全部腐蚀完成,再进行化学清洗。
5)通过MOCVD方法,在金刚石填充的GaN或SiC(n-Type)衬底上从下到上依次生长未掺杂GaN或n-GaN再生长外延层、n-AlGaN或n-AlGaN/n-GaN超晶格下限制层、未掺杂InGaN或n-InGaN下波导层或n-InGaN/n-GaN下双波导层、低温未掺杂GaN或未掺杂InGaN插入层、InGaN/GaN或InGaN/InGaN量子阱结构、未掺杂GaN或未掺杂InGaN上保护层、未掺杂InGaN上波导层或未掺杂InGaN/GaN上双波导层、p-AlGaN或p-AlGaN/p-GaN超晶格电子阻挡层、p-AlGaN或p-AlGaN/p-GaN超晶格上限制层、极化诱导p-AlGaN或p-NiO外延层、p++-GaN或p-InGaN欧姆接触层。
所述未掺杂GaN再生长外延层在800~1050℃外延,厚度为600纳米~2微米。n-GaN再生长外延层以SiH4作为掺杂剂,掺杂浓度为1E18cm-3至5E18cm-3,在800~1050℃外延,厚度为600纳米~2微米。
所述n-AlGaN下限制层在1050~1100℃外延,Al组分为5~10%,厚度为1~2微米,霍尔电子浓度为1E18cm-3~5E18cm-3。n-AlGaN/n-GaN超晶格下限制层在1050~1100℃外延,Al组分为16~20%,厚度为2.5纳米/2.5纳米,霍尔电子浓度为1E18cm-3~5E18cm-3。
所述未掺杂InGaN下波导层在785~820℃外延,In组分为1~3%,厚度依据蓝绿激光器激射条件决定,即厚度为激射波长除以2再除以膜层平均折射率所得数值的整数倍。n-InGaN下波导层在785~820℃外延,In组分为1~3%,厚度依据蓝绿激光器激射条件决定。n-InGaN/n-GaN下双波导层在785~820℃外延,In组分为1~3%,厚度依据蓝绿激光器激射条件决定。
所述低温未掺杂GaN插入层,外延生长温度依据蓝绿光发光波长决定,厚度为2~3纳米。未掺杂InGaN插入层,外延生长温度依据蓝绿光发光波长决定,In组分为1~2%,厚度为2~3纳米。
所述InGaN/GaN量子阱结构为1~3对厚度3纳米/15纳米的周期结构,外延生长温度依据蓝绿光发光波长决定,In组分为1~2%。InGaN/InGaN量子阱结构为1~3对厚度3纳米/15纳米的周期结构,外延生长温度依据蓝绿光发光波长决定,InGaN势垒中In组分为1~2%。
所述未掺杂GaN或未掺杂InGaN上保护层外延生长温度、厚度及组分与量子阱势垒结构一致。
所述未掺杂InGaN上波导层在720~740℃外延,In组分为1~3%,厚度依据蓝绿激光器激射条件决定。未掺杂InGaN/GaN上双波导层在720~740℃外延,In组分为1~3%,厚度依据蓝绿激光器激射条件决定。
所述p-AlGaN电子阻挡层以Cp2Mg作为掺杂剂,在900~920℃外延生长,厚度为20~40纳米,Al组分为20~40%。p-AlGaN/p-GaN超晶格电子阻挡层为4~10对厚度2.5纳米/2.5纳米的周期结构,在900~920℃外延,Al组分为20~30%。
所述p-AlGaN上限制层在900~920℃外延,Al组分为5~10%,厚度为0.5~1微米,霍尔空穴浓度为5E17cm-3~2E18cm-3。p-AlGaN/p-GaN超晶格上限制层在900~920℃外延,Al组分为16~20%,厚度为2.5纳米/2.5纳米,霍尔空穴浓度为5E17cm-3~2E18cm-3。
所述p-AlGaN极化诱导层在900~920℃外延,Al组分由30%线性渐变至0%,厚度为60纳米,霍尔空穴浓度为1E18cm-3~2E18cm-3。p-NiO外延层通过磁控溅射方式外延,厚度为60纳米,空穴浓度达1E19cm-3以上。
所述p++-GaN重掺层在920~940℃外延,厚度为5~10纳米,霍尔空穴浓度为1E21cm-3。p-InGaN欧姆接触层在800~820℃外延,In组分为10~20%,厚度为5~10纳米,霍尔空穴浓度为1E20cm-3。
6)生长结束后取出蓝、绿光激光器外延片,进行后续工艺处理。
实施例二
本实施例提供一种衬底填充金刚石材料的蓝、绿光激光器,包括从下到上依次层叠设置在金刚石填充GaN或SiC(n-Type)衬底上的未掺杂GaN或n-GaN再生长外延层、n-AlGaN或n-AlGaN/n-GaN超晶格下限制层、未掺杂InGaN或n-InGaN下波导层或n-InGaN/n-GaN下双波导层、低温未掺杂GaN或未掺杂InGaN插入层、InGaN/GaN或InGaN/InGaN量子阱结构、未掺杂GaN或未掺杂InGaN上保护层、未掺杂InGaN上波导层或未掺杂InGaN/GaN上双波导层、p-AlGaN或p-AlGaN/p-GaN超晶格电子阻挡层、p-AlGaN或p-AlGaN/p-GaN超晶格上限制层、极化诱导p-AlGaN或p-NiO外延层、p++-GaN或p-InGaN欧姆接触层。
该衬底填充金刚石材料的蓝、绿光激光器通过如下步骤制备得到:
1)在化学清洗后GaN或SiC(n-Type)衬底表面通过PECVD方法沉积100~200纳米厚的SiO2保护层。
2)在GaN或SiC(n-Type)衬底背面进行激光打通孔,打孔方向为沿平行衬底解理边的方向,打孔深度为衬底厚度,直至将衬底打穿,但不能打穿SiO2保护层,打孔直径为50至100微米,打孔间距(前后左右)为20~50微米,打孔后进行化学清洗,衬底示意图如图1所示。
3)先在所打孔内撒入纳米金刚石种子再进行MPCVD外延生长,或直接通过MPCVD外延生长金刚石。
4)对GaN或SiC(n-Type)衬底背面多余的金刚石进行减薄抛光处理,直至衬底背面全部露出;用BOE溶液腐蚀衬底表面SiO2,直至全部腐蚀完成,再进行化学清洗。
5)通过MOCVD方法,在金刚石填充的GaN或SiC(n-Type)衬底上从下到上依次生长未掺杂GaN或n-GaN再生长外延层、n-AlGaN或n-AlGaN/n-GaN超晶格下限制层、未掺杂InGaN或n-InGaN下波导层或n-InGaN/n-GaN下双波导层、低温未掺杂GaN或未掺杂InGaN插入层、InGaN/GaN或InGaN/InGaN量子阱结构、未掺杂GaN或未掺杂InGaN上保护层、未掺杂InGaN上波导层或未掺杂InGaN/GaN上双波导层、p-AlGaN或p-AlGaN/p-GaN超晶格电子阻挡层、p-AlGaN或p-AlGaN/p-GaN超晶格上限制层、极化诱导p-AlGaN或p-NiO外延层、p++-GaN或p-InGaN欧姆接触层。
所述未掺杂GaN再生长外延层在800~1050℃外延,厚度为600纳米~2微米。n-GaN再生长外延层以SiH4作为掺杂剂,掺杂浓度为1E18cm-3至5E18cm-3,在800~1050℃外延,厚度为600纳米~2微米。
所述n-AlGaN下限制层在1050~1100℃外延,Al组分为5~10%,厚度为1~2微米,霍尔电子浓度为1E18cm-3~5E18cm-3。n-AlGaN/n-GaN超晶格下限制层在1050~1100℃外延,Al组分为16~20%,厚度为2.5纳米/2.5纳米,霍尔电子浓度为1E18cm-3~5E18cm-3。
所述未掺杂InGaN下波导层在785~820℃外延,In组分为1~3%,厚度依据蓝绿激光器激射条件决定,即厚度为激射波长除以2再除以膜层平均折射率所得数值的整数倍。n-InGaN下波导层在785~820℃外延,In组分为1~3%,厚度依据蓝绿激光器激射条件决定。n-InGaN/n-GaN下双波导层在785~820℃外延,In组分为1~3%,厚度依据蓝绿激光器激射条件决定。
所述低温未掺杂GaN插入层,外延生长温度依据蓝绿光发光波长决定,厚度为2~3纳米。未掺杂InGaN插入层,外延生长温度依据蓝绿光发光波长决定,In组分为1~2%,厚度为2~3纳米。
所述InGaN/GaN量子阱结构为1~3对厚度3纳米/15纳米的周期结构,外延生长温度依据蓝绿光发光波长决定,In组分为1~2%。InGaN/InGaN量子阱结构为1~3对厚度3纳米/15纳米的周期结构,外延生长温度依据蓝绿光发光波长决定,InGaN势垒中In组分为1~2%。
所述未掺杂GaN或未掺杂InGaN上保护层外延生长温度、厚度及组分与量子阱势垒结构一致。
所述未掺杂InGaN上波导层在720~740℃外延,In组分为1~3%,厚度依据蓝绿激光器激射条件决定。未掺杂InGaN/GaN上双波导层在720~740℃外延,In组分为1~3%,厚度依据蓝绿激光器激射条件决定。
所述p-AlGaN电子阻挡层以Cp2Mg作为掺杂剂,在900~920℃外延生长,厚度为20~40纳米,Al组分为20~40%。p-AlGaN/p-GaN超晶格电子阻挡层为4~10对厚度2.5纳米/2.5纳米的周期结构,在900~920℃外延,Al组分为20~30%。
所述p-AlGaN上限制层在900~920℃外延,Al组分为5~10%,厚度为0.5~1微米,霍尔空穴浓度为5E17cm-3~2E18cm-3。p-AlGaN/p-GaN超晶格上限制层在900~920℃外延,Al组分为16~20%,厚度为2.5纳米/2.5纳米,霍尔空穴浓度为5E17cm-3~2E18cm-3。
所述p-AlGaN极化诱导层在900~920℃外延,Al组分由30%线性渐变至0%,厚度为60纳米,霍尔空穴浓度为1E18cm-3~2E18cm-3。p-NiO外延层通过磁控溅射方式外延,厚度为60纳米,空穴浓度达1E19cm-3以上。
所述p++-GaN重掺层在920~940℃外延,厚度为5~10纳米,霍尔空穴浓度为1E21cm-3。p-InGaN欧姆接触层在800~820℃外延,In组分为10~20%,厚度为5~10纳米,霍尔空穴浓度为1E20cm-3。
6)生长结束后取出蓝、绿光激光器外延片,进行后续工艺处理。
Claims (9)
1.一种改善蓝、绿光半导体激光器散热性能的方法,其特征在于,在金刚石填充的衬底上制备蓝、绿光半导体激光器,所述金刚石填充的衬底通过下述步骤制备得到:
1)在GaN或SiC衬底表面沉积一定厚度的SiO2保护层;
2)在衬底背面打孔,打孔方向为沿平行衬底解理边的方向,打孔深度为衬底厚度或者衬底厚度减去10~20微米,孔直径为50~100微米,孔与孔之间的间距为20~50微米;
3)在孔内生长金刚石;
4)去掉衬底背面多余的金刚石和表面的SiO2保护层,得到金刚石填充的衬底。
2.如权利要求1所述的方法,其特征在于,步骤1)中先对GaN或SiC衬底进行化学清洗,即依次采用甲苯溶液、丙酮溶液、乙醇溶液和去离子水超声清洗衬底,除去衬底表面的有机物及颗粒沾污,并用氮气枪吹干;然后在衬底表面沉积SiO2。
3.如权利要求1所述的方法,其特征在于,步骤1)中采用等离子体增强化学气相沉积法沉积厚度为100~200纳米的SiO2保护层。
4.如权利要求1所述的方法,其特征在于,步骤2)沿特定方向在衬底背面进行激光打孔,并对激光打孔后的衬底进行化学清洗。
5.如权利要求1所述的方法,其特征在于,步骤2)中依次采用甲苯溶液、丙酮溶液、乙醇溶液和去离子水超声清洗打孔后的衬底,除去衬底表面的有机物及颗粒沾污,并用氮气枪吹干。
6.如权利要求1所述的方法,其特征在于,步骤3)先在孔内撒入纳米金刚石种子再通过微波等离子体化学气相沉积的方法外延生长金刚石,或者直接通过微波等离子体化学气相沉积的方法外延生长金刚石。
7.如权利要求1所述的方法,其特征在于,在步骤4)中,对衬底背面多余的金刚石进行减薄抛光处理,直至衬底背面全部露出。
8.如权利要求1所述的方法,其特征在于,在步骤4)中,通过BOE溶液对衬底表面SiO2保护层进行腐蚀,直至全部腐蚀完成。
9.如权利要求1所述的方法,其特征在于,在步骤4)中,对去掉背面多余的金刚石和表面SiO2保护层的衬底进行化学清洗,即依次采用甲苯溶液、丙酮溶液、乙醇溶液和去离子水超声清洗衬底,除去衬底表面的有机物及颗粒沾污,并用氮气枪吹干。
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