JP6344264B2 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

Info

Publication number
JP6344264B2
JP6344264B2 JP2015037512A JP2015037512A JP6344264B2 JP 6344264 B2 JP6344264 B2 JP 6344264B2 JP 2015037512 A JP2015037512 A JP 2015037512A JP 2015037512 A JP2015037512 A JP 2015037512A JP 6344264 B2 JP6344264 B2 JP 6344264B2
Authority
JP
Japan
Prior art keywords
electrode
insulating film
semiconductor device
forming
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2015037512A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016162786A5 (enExample
JP2016162786A (ja
Inventor
一也 長谷川
一也 長谷川
岡　徹
徹 岡
田中　成明
成明 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyoda Gosei Co Ltd
Original Assignee
Toyoda Gosei Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyoda Gosei Co Ltd filed Critical Toyoda Gosei Co Ltd
Priority to JP2015037512A priority Critical patent/JP6344264B2/ja
Publication of JP2016162786A publication Critical patent/JP2016162786A/ja
Publication of JP2016162786A5 publication Critical patent/JP2016162786A5/ja
Application granted granted Critical
Publication of JP6344264B2 publication Critical patent/JP6344264B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP2015037512A 2015-02-27 2015-02-27 半導体装置およびその製造方法 Active JP6344264B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2015037512A JP6344264B2 (ja) 2015-02-27 2015-02-27 半導体装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015037512A JP6344264B2 (ja) 2015-02-27 2015-02-27 半導体装置およびその製造方法

Publications (3)

Publication Number Publication Date
JP2016162786A JP2016162786A (ja) 2016-09-05
JP2016162786A5 JP2016162786A5 (enExample) 2017-06-22
JP6344264B2 true JP6344264B2 (ja) 2018-06-20

Family

ID=56847513

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015037512A Active JP6344264B2 (ja) 2015-02-27 2015-02-27 半導体装置およびその製造方法

Country Status (1)

Country Link
JP (1) JP6344264B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111403566B (zh) * 2020-03-27 2024-12-10 天津赛米卡尔科技有限公司 具有侧壁场板的发光二极管器件结构及其制备方法
WO2025062300A1 (en) * 2023-09-22 2025-03-27 Silanna UV Technologies Pte Ltd Semiconductor device with layer transfer
WO2025062235A2 (en) * 2023-09-22 2025-03-27 Silanna UV Technologies Pte Ltd Semiconductor device
US12453109B2 (en) 2023-09-22 2025-10-21 Silanna UV Technologies Pte Ltd Semiconductor device
CN118263335B (zh) * 2024-03-25 2025-02-11 中国科学技术大学 一种氧化镓二极管及其制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08139341A (ja) * 1994-11-11 1996-05-31 Murata Mfg Co Ltd ショットキ−バリアダイオ−ド
US8502337B2 (en) * 2008-08-05 2013-08-06 Sumitomo Electric Industries, Ltd. Schottky barrier diode and method for manufacturing Schottky barrier diode
JP6107430B2 (ja) * 2012-06-08 2017-04-05 豊田合成株式会社 半導体装置
JP6241099B2 (ja) * 2013-07-17 2017-12-06 豊田合成株式会社 半導体装置

Also Published As

Publication number Publication date
JP2016162786A (ja) 2016-09-05

Similar Documents

Publication Publication Date Title
JP6260553B2 (ja) 半導体装置およびその製造方法
JP6269276B2 (ja) 半導体装置、半導体装置の製造方法
JP6241099B2 (ja) 半導体装置
JP6344264B2 (ja) 半導体装置およびその製造方法
JP6197427B2 (ja) ショットキーバリアダイオード
JP6149786B2 (ja) 半導体装置および半導体装置の製造方法
JP6179445B2 (ja) 縦型ショットキーバリアダイオード、縦型ショットキーバリアダイオードの製造方法
JP6319151B2 (ja) 半導体装置および半導体装置の製造方法
JP6327139B2 (ja) 半導体装置およびその製造方法
JP6406080B2 (ja) 半導体装置の製造方法
US9391150B2 (en) Semiconductor Device
JP6485303B2 (ja) 半導体装置およびその製造方法ならびに電力変換装置
US9972725B2 (en) Semiconductor device and manufacturing method of the same
JP2015204333A (ja) 半導体装置および半導体装置の製造方法
JP6540547B2 (ja) Ｍｐｓダイオード
JP6733588B2 (ja) 半導体装置の製造方法
JP6237553B2 (ja) 半導体装置およびその製造方法
JP6176131B2 (ja) 半導体装置の製造方法
JP2015204335A (ja) 半導体装置および半導体装置の製造方法
JP6319141B2 (ja) 半導体装置
JP6398909B2 (ja) ショットキーバリアダイオード及びその製造方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20170323

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170510

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170829

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20171024

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20180213

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180411

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20180424

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20180507

R150 Certificate of patent or registration of utility model

Ref document number: 6344264

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150