JP6328987B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
- Publication number
- JP6328987B2 JP6328987B2 JP2014088626A JP2014088626A JP6328987B2 JP 6328987 B2 JP6328987 B2 JP 6328987B2 JP 2014088626 A JP2014088626 A JP 2014088626A JP 2014088626 A JP2014088626 A JP 2014088626A JP 6328987 B2 JP6328987 B2 JP 6328987B2
- Authority
- JP
- Japan
- Prior art keywords
- adhesive
- protective tape
- tape
- adhesive layer
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 42
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 238000000034 method Methods 0.000 claims description 113
- 230000001681 protective effect Effects 0.000 claims description 63
- 239000012790 adhesive layer Substances 0.000 claims description 54
- 239000000853 adhesive Substances 0.000 claims description 46
- 230000001070 adhesive effect Effects 0.000 claims description 41
- 239000010410 layer Substances 0.000 claims description 35
- 239000002390 adhesive tape Substances 0.000 claims description 26
- 238000000227 grinding Methods 0.000 claims description 20
- 229920005992 thermoplastic resin Polymers 0.000 claims description 15
- 239000006061 abrasive grain Substances 0.000 claims description 9
- 238000005498 polishing Methods 0.000 claims description 7
- 238000001723 curing Methods 0.000 description 20
- -1 amine imide Chemical class 0.000 description 17
- 239000010408 film Substances 0.000 description 17
- 229920005989 resin Polymers 0.000 description 9
- 239000011347 resin Substances 0.000 description 9
- 238000005108 dry cleaning Methods 0.000 description 5
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 229920000139 polyethylene terephthalate Polymers 0.000 description 5
- 239000005020 polyethylene terephthalate Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000004698 Polyethylene Substances 0.000 description 4
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- 239000005038 ethylene vinyl acetate Substances 0.000 description 4
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 229920000573 polyethylene Polymers 0.000 description 4
- 229920001187 thermosetting polymer Polymers 0.000 description 4
- 239000011800 void material Substances 0.000 description 4
- 239000004743 Polypropylene Substances 0.000 description 3
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 3
- 125000002091 cationic group Chemical group 0.000 description 3
- 238000010538 cationic polymerization reaction Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 239000003505 polymerization initiator Substances 0.000 description 3
- 229920001155 polypropylene Polymers 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 2
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000004745 nonwoven fabric Substances 0.000 description 2
- 239000000123 paper Substances 0.000 description 2
- 150000002978 peroxides Chemical class 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 239000007870 radical polymerization initiator Substances 0.000 description 2
- ROGIWVXWXZRRMZ-UHFFFAOYSA-N 2-methylbuta-1,3-diene;styrene Chemical compound CC(=C)C=C.C=CC1=CC=CC=C1 ROGIWVXWXZRRMZ-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical class NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 1
- 229930182556 Polyacetal Natural products 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical class C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- YTPLMLYBLZKORZ-UHFFFAOYSA-O Thiophenium Chemical class [SH+]1C=CC=C1 YTPLMLYBLZKORZ-UHFFFAOYSA-O 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 1
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 229920000800 acrylic rubber Polymers 0.000 description 1
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- UENWRTRMUIOCKN-UHFFFAOYSA-N benzyl thiol Chemical class SCC1=CC=CC=C1 UENWRTRMUIOCKN-UHFFFAOYSA-N 0.000 description 1
- WGQKYBSKWIADBV-UHFFFAOYSA-N benzylamine Chemical class NCC1=CC=CC=C1 WGQKYBSKWIADBV-UHFFFAOYSA-N 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 150000001733 carboxylic acid esters Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013039 cover film Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000012933 diacyl peroxide Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002432 hydroperoxides Chemical class 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- AHHWIHXENZJRFG-UHFFFAOYSA-N oxetane Chemical compound C1COC1 AHHWIHXENZJRFG-UHFFFAOYSA-N 0.000 description 1
- 125000005634 peroxydicarbonate group Chemical class 0.000 description 1
- 229920006287 phenoxy resin Polymers 0.000 description 1
- 239000013034 phenoxy resin Substances 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920001707 polybutylene terephthalate Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 229920006380 polyphenylene oxide Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 150000003459 sulfonic acid esters Chemical class 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Dicing (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014088626A JP6328987B2 (ja) | 2014-04-22 | 2014-04-22 | 半導体装置の製造方法 |
| TW103128013A TWI625776B (zh) | 2014-04-22 | 2014-08-15 | Semiconductor device manufacturing method, semiconductor device, and protective tape |
| KR1020167023474A KR102326106B1 (ko) | 2014-04-22 | 2014-08-18 | 반도체 장치의 제조 방법 |
| PCT/JP2014/071531 WO2015162807A1 (ja) | 2014-04-22 | 2014-08-18 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014088626A JP6328987B2 (ja) | 2014-04-22 | 2014-04-22 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2015207718A JP2015207718A (ja) | 2015-11-19 |
| JP6328987B2 true JP6328987B2 (ja) | 2018-05-23 |
Family
ID=54331993
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014088626A Active JP6328987B2 (ja) | 2014-04-22 | 2014-04-22 | 半導体装置の製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6328987B2 (zh) |
| KR (1) | KR102326106B1 (zh) |
| TW (1) | TWI625776B (zh) |
| WO (1) | WO2015162807A1 (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7222366B2 (ja) | 2020-01-27 | 2023-02-15 | トヨタ自動車株式会社 | 内燃機関の制御装置 |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6876614B2 (ja) * | 2015-11-04 | 2021-05-26 | リンテック株式会社 | 半導体装置の製造方法および保護膜形成用シート |
| WO2017077958A1 (ja) * | 2015-11-04 | 2017-05-11 | リンテック株式会社 | 半導体装置の製造方法 |
| WO2017077957A1 (ja) * | 2015-11-04 | 2017-05-11 | リンテック株式会社 | 半導体装置の製造方法 |
| JP6989269B2 (ja) * | 2016-05-11 | 2022-01-05 | 積水化学工業株式会社 | 半導体パッケージの製造方法 |
| JP6820724B2 (ja) * | 2016-11-18 | 2021-01-27 | 積水化学工業株式会社 | 半導体デバイスの製造方法及び保護テープ |
| KR101877897B1 (ko) * | 2017-03-06 | 2018-07-12 | 엘비세미콘 주식회사 | 범프 구조체의 제조방법 |
| KR102030398B1 (ko) * | 2017-07-28 | 2019-10-10 | (주) 예스티 | 웨이퍼 다이싱 방법 및 웨이퍼를 다이싱하기 위한 시스템 |
| KR102030409B1 (ko) * | 2017-07-28 | 2019-10-10 | (주) 예스티 | 웨이퍼 다이싱 방법 및 웨이퍼를 다이싱하기 위한 시스템 |
| KR20210075965A (ko) * | 2018-10-22 | 2021-06-23 | 린텍 가부시키가이샤 | 반도체 장치의 제조 방법 |
| WO2021132679A1 (ja) * | 2019-12-27 | 2021-07-01 | リンテック株式会社 | 硬化性樹脂フィルム、複合シート、及び半導体チップの製造方法 |
| KR20220147084A (ko) * | 2020-02-27 | 2022-11-02 | 린텍 가부시키가이샤 | 보호막 형성용 시트, 보호막이 형성된 칩의 제조 방법, 및 적층물 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002079460A (ja) * | 2000-09-07 | 2002-03-19 | Canon Inc | 両面研磨方法および該両面研磨方法により研磨された薄板 |
| JP4170839B2 (ja) * | 2003-07-11 | 2008-10-22 | 日東電工株式会社 | 積層シート |
| JP2007188967A (ja) * | 2006-01-11 | 2007-07-26 | Sony Corp | 基板支持体、基板処理方法及び半導体装置の製造方法 |
| JP5525200B2 (ja) * | 2008-07-28 | 2014-06-18 | 積水化学工業株式会社 | 半導体チップ積層体の製造方法 |
| JP2011171712A (ja) * | 2010-01-21 | 2011-09-01 | Hitachi Chem Co Ltd | 半導体ウエハ加工用接着テープ、半導体ウエハ加工用接着テープ付き半導体ウエハの製造方法、半導体装置の製造方法及び半導体装置 |
| CN103081081B (zh) * | 2010-08-23 | 2016-03-02 | 积水化学工业株式会社 | 粘接片及半导体芯片的安装方法 |
| JP5830250B2 (ja) * | 2011-02-15 | 2015-12-09 | 日東電工株式会社 | 半導体装置の製造方法 |
| JP6136101B2 (ja) * | 2012-04-10 | 2017-05-31 | 日立化成株式会社 | 感光性樹脂組成物、フィルム状樹脂、樹脂シート、樹脂パターン、樹脂層付半導体ウェハ、樹脂層付透明基板、半導体装置及び半導体装置の製造方法 |
| JP5573896B2 (ja) * | 2012-08-01 | 2014-08-20 | 住友ベークライト株式会社 | 半導体用フィルム、半導体装置の製造方法および半導体装置 |
| WO2014157329A1 (ja) * | 2013-03-27 | 2014-10-02 | リンテック株式会社 | 半導体チップの製造方法 |
-
2014
- 2014-04-22 JP JP2014088626A patent/JP6328987B2/ja active Active
- 2014-08-15 TW TW103128013A patent/TWI625776B/zh active
- 2014-08-18 WO PCT/JP2014/071531 patent/WO2015162807A1/ja active Application Filing
- 2014-08-18 KR KR1020167023474A patent/KR102326106B1/ko active IP Right Grant
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7222366B2 (ja) | 2020-01-27 | 2023-02-15 | トヨタ自動車株式会社 | 内燃機関の制御装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2015207718A (ja) | 2015-11-19 |
| KR20160141707A (ko) | 2016-12-09 |
| TWI625776B (zh) | 2018-06-01 |
| WO2015162807A1 (ja) | 2015-10-29 |
| TW201541507A (zh) | 2015-11-01 |
| KR102326106B1 (ko) | 2021-11-15 |
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