JP6324706B2 - 発光素子及びそれを製造する方法 - Google Patents
発光素子及びそれを製造する方法 Download PDFInfo
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- JP6324706B2 JP6324706B2 JP2013232542A JP2013232542A JP6324706B2 JP 6324706 B2 JP6324706 B2 JP 6324706B2 JP 2013232542 A JP2013232542 A JP 2013232542A JP 2013232542 A JP2013232542 A JP 2013232542A JP 6324706 B2 JP6324706 B2 JP 6324706B2
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- 238000000034 method Methods 0.000 title claims description 22
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000010410 layer Substances 0.000 claims description 256
- 239000004065 semiconductor Substances 0.000 claims description 125
- 230000001788 irregular Effects 0.000 claims description 107
- 239000000758 substrate Substances 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 16
- 239000011241 protective layer Substances 0.000 claims description 13
- 239000012535 impurity Substances 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims description 2
- 229910002601 GaN Inorganic materials 0.000 description 50
- 230000008569 process Effects 0.000 description 14
- 238000000605 extraction Methods 0.000 description 11
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 7
- 239000006185 dispersion Substances 0.000 description 7
- 238000009826 distribution Methods 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- -1 gallium nitride series compound Chemical class 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052596 spinel Inorganic materials 0.000 description 2
- 239000011029 spinel Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
Description
Claims (24)
- 基板上に位置する第1導電型半導体層と、
前記第1導電型半導体層上に位置する活性層と、
前記活性層上に位置する第2導電型半導体層と、
前記活性層及び前記第2導電型半導体層の一部がエッチングされて露出された前記第1導電型半導体層の表面に位置する不規則凹凸パターンと、
露出された前記第1導電型半導体層上に形成された第1電極パッドと、
前記第1電極パッドから分岐された第1電極延長部と、
前記第2導電型半導体層上に形成された第2電極パッドと、
前記第2電極パッドから分岐されて前記第1電極延長部と交互に並んで配列された第2電極延長部と、
を含み、
前記不規則凹凸パターンは凸部及び凹部を有し、前記凸部は不規則な高さを有し、前記凹部は不規則な深さを有し、
前記不規則凹凸パターンは、
前記第1電極延長部と並んで重なった第1不規則凹凸パターンと、
前記第1不規則凹凸パターンから前記第1電極延長部と交互に並んで配列された第2電極延長部に対して特定の方向に延びた第2不規則凹凸パターンと、
を含む発光素子。 - 前記特定の方向は、前記第1電極延長部と前記第2電極延長部が交互に並ぶ第1方向に垂直な方向であることを特徴とする請求項1に記載の発光素子。
- 前記不規則凹凸パターンは少なくとも前記第1電極パッドと前記第1導電型半導体層間に位置する請求項1に記載の発光素子。
- 前記第1導電型半導体層は、第1ないし第3N−GaN層を含み、前記第1N−GaN層及び前記第3N−GaN層は前記第2N−GaN層よりn型不純物が高濃度ドーピングされ、前記第3N−GaN層は前記第1電極パッドとオーミック接触され、前記不規則凹凸パターンは前記第3N−GaN層に形成された請求項3に記載の発光素子。
- 前記不規則凹凸パターンの凹部の少なくとも一部は、前記第2N−GaN層の一部または全領域まで延びるか、前記第1N−GaN層の上部領域まで延びた請求項4に記載の発光素子。
- 前記不規則凹凸パターンは、前記活性層の下に位置する請求項1に記載の発光素子。
- 前記不規則凹凸パターンは前記第1電極パッドの下部及び前記第1電極延長部の下部に形成された請求項1に記載の発光素子。
- 前記第1電極パッドと接触する前記第1導電型半導体層の上部は平らな面を有する請求項1に記載の発光素子。
- 前記不規則凹凸パターンは、前記凸部の端部は前記平らな面と同じ高さに位置するか、或いは前記平らな面より低い高さに位置する請求項8に記載の発光素子。
- 前記不規則凹凸パターンは、前記凸部の端部は前記平らな面と同じ高さに位置するか、或いは前記平らな面より高い高さに位置する請求項8に記載の発光素子。
- 前記第2導電型半導体層と前記第2電極パッド間に形成された透明導電層をさらに含み、前記第1電極パッドと前記透明導電層間の水平間隔は5μmないし50μmである請求項8に記載の発光素子。
- 前記不規則凹凸パターンは、前記発光素子の縁領域に形成された第3不規則凹凸パターンをさらに含む請求項1に記載の発光素子。
- 前記第1電極パッド及び前記第2電極パッドはドームタイプである請求項8に記載の発光素子。
- 前記第1導電型半導体層は、前記発光素子の縁領域に従って前記活性層及び前記第2導電型半導体層の一部がエッチングされて露出され、前記縁領域の露出された前記第1導電型半導体層上に不規則凹凸パターンが形成された請求項1に記載の発光素子。
- 前記縁領域は、角領域と側部領域を含み、前記角領域は前記側部領域の幅より広い請求項13に記載の発光素子。
- 前記第1導電型半導体層内の前記不規則凹凸パターンの高さは、前記不規則凹凸パターンの下の前記第1導電型半導体層の高さより小さい請求項1に記載の発光素子。
- 前記不規則凹凸パターンは、160nmないし3μmの高さを有する請求項1に記載の発光素子。
- 基板上に第1導電型半導体層、活性層及び第2導電型半導体層を成長させ、
前記活性層及び前記第2導電型半導体層をパターニングして前記第1導電型半導体層の一部を露出させ、
露出された前記第1導電型半導体層上に保護層及びマスク金属層を形成し、
前記マスク金属層を一定温度で加熱して粒子形態に凝集された構造のマスクを形成し、
前記マスクをエッチングマスクとして使用して、露出された第1導電型半導体層をエッチングして不規則凹凸パターンを形成し、
前記保護層及び前記マスクを除去し、
露出された前記第1導電型半導体層上に第1電極パッド、前記第1電極パッドから分岐された第1電極延長部、前記第2導電型半導体層上に第2電極パッド、前記第2電極パッドから分岐されて前記第1電極延長部と交互に並ぶように第2電極延長部をそれぞれ形成し、
前記不規則凹凸パターンは凸部及び凹部を有し、前記凸部は不規則な高さを有し、前記凹部は不規則な深さを有し、
前記不規則凹凸パターンは、
前記第1電極延長部と並んで重なった第1不規則凹凸パターンと、
前記第1不規則凹凸パターンから前記第1電極延長部と交互に並んで配列された第2電極延長部に対して特定の方向に延びた第2不規則凹凸パターンと、を含む、
発光素子の製造方法。 - 前記保護層及びマスク金属層は、前記の露出された第1導電型半導体層と共に前記第2導電型半導体層を覆うように形成される請求項18に記載の発光素子の製造方法。
- 前記不規則凹凸パターンを形成する前に、前記第1導電型半導体層上のマスクを覆い、前記第1導電型半導体層上のマスクを露出させる感光膜パターンを形成する段階を更に含む請求項18に記載の発光素子の製造方法。
- 前記保護層は、SiO2である請求項18に記載の発光素子の製造方法。
- 前記マスク金属層は、Niである請求項18に記載の発光素子の製造方法。
- 前記のマスク形成段階は、前記マスク金属層が400℃ないし900℃に加熱される請求項22に記載の発光素子の製造方法。
- 前記不規則凹凸パターンは、160nmないし3μmの高さを有する請求項18に記載の発光素子の製造方法。
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KR1020120126903A KR102013363B1 (ko) | 2012-11-09 | 2012-11-09 | 발광 소자 및 그것을 제조하는 방법 |
KR10-2012-0126903 | 2012-11-09 |
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JP2014096592A JP2014096592A (ja) | 2014-05-22 |
JP6324706B2 true JP6324706B2 (ja) | 2018-05-16 |
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US (1) | US9269867B2 (ja) |
EP (1) | EP2731150B1 (ja) |
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KR (1) | KR102013363B1 (ja) |
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KR101654340B1 (ko) * | 2009-12-28 | 2016-09-06 | 서울바이오시스 주식회사 | 발광 다이오드 |
JP5197654B2 (ja) * | 2010-03-09 | 2013-05-15 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
KR101028327B1 (ko) * | 2010-04-15 | 2011-04-12 | 엘지이노텍 주식회사 | 발광소자, 발광소자 제조방법 및 발광소자 패키지 |
KR101673955B1 (ko) | 2010-07-02 | 2016-11-08 | 삼성전자주식회사 | 반도체 발광소자 및 이를 제조하는 방법 |
TW201248725A (en) * | 2011-05-31 | 2012-12-01 | Aceplux Optotech Inc | Epitaxial substrate with transparent cone, LED, and manufacturing method thereof. |
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US9269867B2 (en) | 2016-02-23 |
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EP2731150A2 (en) | 2014-05-14 |
EP2731150B1 (en) | 2020-01-08 |
JP2014096592A (ja) | 2014-05-22 |
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EP2731150A3 (en) | 2016-01-20 |
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