JP6320782B2 - アレイ基板 - Google Patents

アレイ基板 Download PDF

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Publication number
JP6320782B2
JP6320782B2 JP2014021559A JP2014021559A JP6320782B2 JP 6320782 B2 JP6320782 B2 JP 6320782B2 JP 2014021559 A JP2014021559 A JP 2014021559A JP 2014021559 A JP2014021559 A JP 2014021559A JP 6320782 B2 JP6320782 B2 JP 6320782B2
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JP
Japan
Prior art keywords
switching element
connection wiring
wiring pattern
display
array substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2014021559A
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English (en)
Japanese (ja)
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JP2015148722A5 (enExample
JP2015148722A (ja
Inventor
勇一 天野
勇一 天野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Display Inc
Original Assignee
Japan Display Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Display Inc filed Critical Japan Display Inc
Priority to JP2014021559A priority Critical patent/JP6320782B2/ja
Priority to US14/612,979 priority patent/US9443914B2/en
Publication of JP2015148722A publication Critical patent/JP2015148722A/ja
Publication of JP2015148722A5 publication Critical patent/JP2015148722A5/ja
Application granted granted Critical
Publication of JP6320782B2 publication Critical patent/JP6320782B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/427—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer having different thicknesses of the semiconductor bodies in different TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/88—Dummy elements, i.e. elements having non-functional features
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
JP2014021559A 2014-02-06 2014-02-06 アレイ基板 Active JP6320782B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2014021559A JP6320782B2 (ja) 2014-02-06 2014-02-06 アレイ基板
US14/612,979 US9443914B2 (en) 2014-02-06 2015-02-03 Array substrate and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014021559A JP6320782B2 (ja) 2014-02-06 2014-02-06 アレイ基板

Publications (3)

Publication Number Publication Date
JP2015148722A JP2015148722A (ja) 2015-08-20
JP2015148722A5 JP2015148722A5 (enExample) 2017-03-02
JP6320782B2 true JP6320782B2 (ja) 2018-05-09

Family

ID=53755515

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014021559A Active JP6320782B2 (ja) 2014-02-06 2014-02-06 アレイ基板

Country Status (2)

Country Link
US (1) US9443914B2 (enExample)
JP (1) JP6320782B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105070725A (zh) * 2015-07-21 2015-11-18 深圳市华星光电技术有限公司 一种平板显示器中的面板结构及制作方法
KR102512715B1 (ko) * 2015-09-15 2023-03-23 삼성디스플레이 주식회사 플렉서블 표시장치 및 이의 제조 방법
JP6621284B2 (ja) 2015-09-28 2019-12-18 株式会社ジャパンディスプレイ 表示装置
KR102483956B1 (ko) * 2016-03-31 2023-01-03 삼성디스플레이 주식회사 디스플레이 장치
KR102523427B1 (ko) * 2016-04-15 2023-04-20 삼성디스플레이 주식회사 표시 패널 및 이의 제조 방법
JP6965412B2 (ja) * 2016-11-30 2021-11-10 株式会社ジャパンディスプレイ 表示装置
JP6740108B2 (ja) * 2016-11-30 2020-08-12 株式会社ジャパンディスプレイ 表示装置
JP2020155280A (ja) 2019-03-19 2020-09-24 ソニーセミコンダクタソリューションズ株式会社 表示装置及び電子機器
KR102885847B1 (ko) * 2019-09-11 2025-11-13 삼성디스플레이 주식회사 디스플레이 장치

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3302625B2 (ja) * 1997-08-07 2002-07-15 シャープ株式会社 液晶表示装置
JP4761782B2 (ja) * 2005-01-27 2011-08-31 東芝モバイルディスプレイ株式会社 液晶表示装置及びその製造方法
JP4697524B2 (ja) * 2005-03-30 2011-06-08 ソニー株式会社 アクティブマトリクス型液晶表示装置
JP2007093685A (ja) * 2005-09-27 2007-04-12 Sanyo Epson Imaging Devices Corp 電気光学装置及び電子機器
US8493543B2 (en) 2008-10-17 2013-07-23 Sony Corporation Liquid crystal display device
JP5271661B2 (ja) * 2008-10-17 2013-08-21 株式会社ジャパンディスプレイウェスト 液晶表示装置
TWI431606B (zh) * 2010-12-31 2014-03-21 Au Optronics Corp 立體顯示器及其驅動方法
JP6004560B2 (ja) * 2011-10-06 2016-10-12 株式会社ジャパンディスプレイ 表示装置

Also Published As

Publication number Publication date
US9443914B2 (en) 2016-09-13
JP2015148722A (ja) 2015-08-20
US20150221705A1 (en) 2015-08-06

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