JP6307791B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
JP6307791B2
JP6307791B2 JP2013036820A JP2013036820A JP6307791B2 JP 6307791 B2 JP6307791 B2 JP 6307791B2 JP 2013036820 A JP2013036820 A JP 2013036820A JP 2013036820 A JP2013036820 A JP 2013036820A JP 6307791 B2 JP6307791 B2 JP 6307791B2
Authority
JP
Japan
Prior art keywords
light receiving
substrate
semiconductor device
receiving elements
elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2013036820A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014165417A5 (enrdf_load_stackoverflow
JP2014165417A (ja
Inventor
菅谷 功
功 菅谷
史郎 綱井
史郎 綱井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to JP2013036820A priority Critical patent/JP6307791B2/ja
Publication of JP2014165417A publication Critical patent/JP2014165417A/ja
Publication of JP2014165417A5 publication Critical patent/JP2014165417A5/ja
Application granted granted Critical
Publication of JP6307791B2 publication Critical patent/JP6307791B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
JP2013036820A 2013-02-27 2013-02-27 半導体装置 Active JP6307791B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013036820A JP6307791B2 (ja) 2013-02-27 2013-02-27 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013036820A JP6307791B2 (ja) 2013-02-27 2013-02-27 半導体装置

Publications (3)

Publication Number Publication Date
JP2014165417A JP2014165417A (ja) 2014-09-08
JP2014165417A5 JP2014165417A5 (enrdf_load_stackoverflow) 2017-03-30
JP6307791B2 true JP6307791B2 (ja) 2018-04-11

Family

ID=51615738

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013036820A Active JP6307791B2 (ja) 2013-02-27 2013-02-27 半導体装置

Country Status (1)

Country Link
JP (1) JP6307791B2 (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10665623B2 (en) * 2015-02-27 2020-05-26 Sony Corporation Semiconductor device, solid-state image pickup element, imaging device, and electronic apparatus
CN107615481B (zh) * 2015-05-18 2020-07-21 索尼公司 半导体装置和成像装置
US10020336B2 (en) 2015-12-28 2018-07-10 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device using three dimentional (3D) integration
CN107179575B (zh) 2016-03-09 2022-05-24 松下知识产权经营株式会社 光检测装置及光检测系统
JP6761974B2 (ja) * 2016-03-09 2020-09-30 パナソニックIpマネジメント株式会社 光検出装置および光検出システム
JP2018117027A (ja) * 2017-01-18 2018-07-26 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、電子装置、および、固体撮像素子の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09181985A (ja) * 1995-12-22 1997-07-11 Sony Corp Ccd型撮像素子及びその製造方法
JP4349232B2 (ja) * 2004-07-30 2009-10-21 ソニー株式会社 半導体モジュール及びmos型固体撮像装置
KR100610481B1 (ko) * 2004-12-30 2006-08-08 매그나칩 반도체 유한회사 수광영역을 넓힌 이미지센서 및 그 제조 방법
JP2008227253A (ja) * 2007-03-14 2008-09-25 Fujifilm Corp 裏面照射型固体撮像素子
JP5517800B2 (ja) * 2010-07-09 2014-06-11 キヤノン株式会社 固体撮像装置用の部材および固体撮像装置の製造方法
JP5500007B2 (ja) * 2010-09-03 2014-05-21 ソニー株式会社 固体撮像素子およびカメラシステム
JP5835963B2 (ja) * 2011-06-24 2015-12-24 オリンパス株式会社 固体撮像装置、撮像装置、および信号読み出し方法
JP5791982B2 (ja) * 2011-07-06 2015-10-07 オリンパス株式会社 固体撮像装置、撮像装置、および信号読み出し方法

Also Published As

Publication number Publication date
JP2014165417A (ja) 2014-09-08

Similar Documents

Publication Publication Date Title
JP6307791B2 (ja) 半導体装置
JP7424445B2 (ja) 半導体装置および撮像装置
JP5247185B2 (ja) 背面照明構造のイメージセンサー及びそのイメージセンサーの製造方法
US8637949B2 (en) Camera module and manufacturing method thereof
JP5970747B2 (ja) 半導体装置
US20130028589A1 (en) Compact camera module and method for fabricating the same
TW201919252A (zh) 半導體影像感測器
US10497733B2 (en) Photoelectric conversion apparatus and system
JP6168366B2 (ja) 半導体装置、半導体装置の製造方法及び電子機器
US20110169118A1 (en) Optical device, method of manufacturing the same, and electronic apparatus
CN106298819B (zh) 背照式影像感测器及其制作方法
JP2014107448A (ja) 積層半導体装置の製造方法および積層半導体製造装置
JP2012204403A (ja) 固体撮像装置及びその製造方法
JP6123397B2 (ja) 撮像装置
US11605658B2 (en) Bonding interconnection structure of image sensor semiconductor package
JP2008052004A (ja) レンズアレイ及び固体撮像素子の製造方法
JP5703784B2 (ja) 基板の接続構造、基板セット、光センサアレイ装置及び基板を接続する方法
US20160172401A1 (en) Solid-state imaging device, camera module, and method for manufacturing solid-state imaging device
JP5864082B2 (ja) Cmosイメージセンサー及びその製造方法
US8158452B2 (en) Backside-illuminated imaging device and manufacturing method of the same
JP6021378B2 (ja) 基板および半導体装置
KR102059233B1 (ko) 반도체 광검출 장치
JP7246136B2 (ja) 半導体装置、カメラおよび半導体装置の製造方法
CN101615595A (zh) Cmos图像传感器及其制造方法
JP6127747B2 (ja) 赤外線センサ、及び、赤外線センサの製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160209

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20160209

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170224

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170314

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170510

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170704

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170824

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20171024

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180119

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20180129

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20180213

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20180226

R150 Certificate of patent or registration of utility model

Ref document number: 6307791

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250