JP6291822B2 - 基板および基板接合方法 - Google Patents

基板および基板接合方法 Download PDF

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Publication number
JP6291822B2
JP6291822B2 JP2013255156A JP2013255156A JP6291822B2 JP 6291822 B2 JP6291822 B2 JP 6291822B2 JP 2013255156 A JP2013255156 A JP 2013255156A JP 2013255156 A JP2013255156 A JP 2013255156A JP 6291822 B2 JP6291822 B2 JP 6291822B2
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substrate
bonding
cavity
processing
light receiving
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JP2014143399A5 (enExample
JP2014143399A (ja
Inventor
菅谷　功
功 菅谷
史郎 綱井
史郎 綱井
岡田　政志
政志 岡田
創 三ッ石
創 三ッ石
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Nikon Corp
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Nikon Corp
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JP2013255156A 2012-12-25 2013-12-10 基板および基板接合方法 Active JP6291822B2 (ja)

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JP2013255156A JP6291822B2 (ja) 2012-12-25 2013-12-10 基板および基板接合方法

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JP2012281788 2012-12-25
JP2012281788 2012-12-25
JP2013255156A JP6291822B2 (ja) 2012-12-25 2013-12-10 基板および基板接合方法

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JP2014143399A JP2014143399A (ja) 2014-08-07
JP2014143399A5 JP2014143399A5 (enExample) 2016-12-28
JP6291822B2 true JP6291822B2 (ja) 2018-03-14

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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6471426B2 (ja) * 2014-08-08 2019-02-20 株式会社ニコン 基板
JP6856974B2 (ja) * 2015-03-31 2021-04-14 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および電子機器
CN114744002A (zh) * 2015-03-31 2022-07-12 索尼半导体解决方案公司 半导体装置
US10020336B2 (en) 2015-12-28 2018-07-10 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device using three dimentional (3D) integration
KR102572133B1 (ko) * 2016-09-07 2023-08-30 에스케이하이닉스 주식회사 에어 갭을 가진 적층형 이미지 센서
JP7398475B2 (ja) * 2020-01-07 2023-12-14 長江存儲科技有限責任公司 金属誘電体接合方法及び構造
JP2022096892A (ja) * 2020-12-18 2022-06-30 ソニーセミコンダクタソリューションズ株式会社 半導体装置、半導体装置の製造方法、及び電子機器
WO2022201530A1 (ja) * 2021-03-26 2022-09-29 昭和電工マテリアルズ株式会社 半導体装置の製造方法、半導体装置、集積回路要素、及び、集積回路要素の製造方法
DE102021117652B3 (de) * 2021-07-08 2022-03-10 Jenoptik Optical Systems Gmbh Verfahren zum stoffschlüssigen Verbinden eines Glaselements mit einem Trägerelement und optische Vorrichtung
WO2025052889A1 (ja) * 2023-09-04 2025-03-13 ソニーセミコンダクタソリューションズ株式会社 半導体装置および電子機器

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04148526A (ja) * 1990-10-12 1992-05-21 Sumitomo Metal Mining Co Ltd シリコン基板の製造方法
JPH0963912A (ja) * 1995-08-18 1997-03-07 Hoya Corp 貼り合わせ基板製造方法
JP3383811B2 (ja) * 1996-10-28 2003-03-10 松下電器産業株式会社 半導体チップモジュール及びその製造方法
JP4126749B2 (ja) * 1998-04-22 2008-07-30 ソニー株式会社 半導体装置の製造方法
JP2000182916A (ja) * 1998-12-11 2000-06-30 Matsushita Electric Ind Co Ltd 半導体デバイスおよび半導体ウェーハおよび製造方法
JP3440057B2 (ja) * 2000-07-05 2003-08-25 唯知 須賀 半導体装置およびその製造方法
JP3927925B2 (ja) * 2003-06-04 2007-06-13 直江津電子工業株式会社 半導体接合ウエハ
JP2008288384A (ja) * 2007-05-17 2008-11-27 Sony Corp ３次元積層デバイスとその製造方法、及び３次元積層デバイスの接合方法
US7683459B2 (en) * 2008-06-02 2010-03-23 Hong Kong Applied Science and Technology Research Institute Company, Ltd. Bonding method for through-silicon-via based 3D wafer stacking

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