JP6281395B2 - 撮像素子 - Google Patents

撮像素子 Download PDF

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Publication number
JP6281395B2
JP6281395B2 JP2014085056A JP2014085056A JP6281395B2 JP 6281395 B2 JP6281395 B2 JP 6281395B2 JP 2014085056 A JP2014085056 A JP 2014085056A JP 2014085056 A JP2014085056 A JP 2014085056A JP 6281395 B2 JP6281395 B2 JP 6281395B2
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JP
Japan
Prior art keywords
layer
infrared
infrared absorption
refractive index
imaging device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2014085056A
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English (en)
Japanese (ja)
Other versions
JP2015128127A5 (enExample
JP2015128127A (ja
Inventor
望 木村
望 木村
伸治 今泉
伸治 今泉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2014085056A priority Critical patent/JP6281395B2/ja
Priority to TW103137935A priority patent/TWI641122B/zh
Priority to PCT/JP2014/005839 priority patent/WO2015079662A1/ja
Priority to US15/024,146 priority patent/US9991304B2/en
Priority to EP14866091.3A priority patent/EP3076432A4/en
Publication of JP2015128127A publication Critical patent/JP2015128127A/ja
Publication of JP2015128127A5 publication Critical patent/JP2015128127A5/ja
Application granted granted Critical
Publication of JP6281395B2 publication Critical patent/JP6281395B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/22—Absorbing filters
    • G02B5/223—Absorbing filters containing organic substances, e.g. dyes, inks or pigments
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/26—Reflecting filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Optical Filters (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2014085056A 2013-11-26 2014-04-16 撮像素子 Expired - Fee Related JP6281395B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2014085056A JP6281395B2 (ja) 2013-11-26 2014-04-16 撮像素子
TW103137935A TWI641122B (zh) 2013-11-26 2014-10-31 Camera element
PCT/JP2014/005839 WO2015079662A1 (ja) 2013-11-26 2014-11-20 撮像素子
US15/024,146 US9991304B2 (en) 2013-11-26 2014-11-20 Image pickup device having an infrared absorption layer between a laminate band-pass layer and a low refractive index layer above on-chip lenses
EP14866091.3A EP3076432A4 (en) 2013-11-26 2014-11-20 Imaging element

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013244424 2013-11-26
JP2013244424 2013-11-26
JP2014085056A JP6281395B2 (ja) 2013-11-26 2014-04-16 撮像素子

Publications (3)

Publication Number Publication Date
JP2015128127A JP2015128127A (ja) 2015-07-09
JP2015128127A5 JP2015128127A5 (enExample) 2017-04-06
JP6281395B2 true JP6281395B2 (ja) 2018-02-21

Family

ID=53198631

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014085056A Expired - Fee Related JP6281395B2 (ja) 2013-11-26 2014-04-16 撮像素子

Country Status (5)

Country Link
US (1) US9991304B2 (enExample)
EP (1) EP3076432A4 (enExample)
JP (1) JP6281395B2 (enExample)
TW (1) TWI641122B (enExample)
WO (1) WO2015079662A1 (enExample)

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US11525060B2 (en) 2019-04-16 2022-12-13 Samsung Electronics Co., Ltd. Near-infrared absorbing composition, optical structure comprising the same, and camera module and electronic device comprising the same

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JP7134763B2 (ja) * 2018-07-23 2022-09-12 キヤノン株式会社 モジュール及びその製造方法
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JP2023127332A (ja) * 2022-03-01 2023-09-13 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11525060B2 (en) 2019-04-16 2022-12-13 Samsung Electronics Co., Ltd. Near-infrared absorbing composition, optical structure comprising the same, and camera module and electronic device comprising the same

Also Published As

Publication number Publication date
WO2015079662A1 (ja) 2015-06-04
EP3076432A4 (en) 2017-11-01
US20160293650A1 (en) 2016-10-06
EP3076432A1 (en) 2016-10-05
US9991304B2 (en) 2018-06-05
TWI641122B (zh) 2018-11-11
TW201523856A (zh) 2015-06-16
JP2015128127A (ja) 2015-07-09

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