JP6278833B2 - リソグラフィ装置、および物品の製造方法 - Google Patents

リソグラフィ装置、および物品の製造方法 Download PDF

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Publication number
JP6278833B2
JP6278833B2 JP2014105667A JP2014105667A JP6278833B2 JP 6278833 B2 JP6278833 B2 JP 6278833B2 JP 2014105667 A JP2014105667 A JP 2014105667A JP 2014105667 A JP2014105667 A JP 2014105667A JP 6278833 B2 JP6278833 B2 JP 6278833B2
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Japan
Prior art keywords
substrate
sample shot
unit
stage
detection unit
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JP2014105667A
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English (en)
Japanese (ja)
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JP2015220447A5 (enExample
JP2015220447A (ja
Inventor
匡博 小倉
匡博 小倉
和彦 三島
和彦 三島
一史 水元
一史 水元
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Canon Inc
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Canon Inc
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Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2014105667A priority Critical patent/JP6278833B2/ja
Priority to TW104114411A priority patent/TWI637240B/zh
Priority to KR1020150066548A priority patent/KR101751593B1/ko
Priority to US14/714,595 priority patent/US9606456B2/en
Priority to EP15001489.2A priority patent/EP2947512B1/en
Priority to CN201510257107.9A priority patent/CN105093845B/zh
Publication of JP2015220447A publication Critical patent/JP2015220447A/ja
Publication of JP2015220447A5 publication Critical patent/JP2015220447A5/ja
Application granted granted Critical
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049—Technique, e.g. interferometric

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Engineering & Computer Science (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
JP2014105667A 2014-05-21 2014-05-21 リソグラフィ装置、および物品の製造方法 Active JP6278833B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2014105667A JP6278833B2 (ja) 2014-05-21 2014-05-21 リソグラフィ装置、および物品の製造方法
TW104114411A TWI637240B (zh) 2014-05-21 2015-05-06 在基板上形成圖案的微影裝置、元件的製造方法及在微影裝置中決定檢測單元檢測樣本投射區域的次序的方法
KR1020150066548A KR101751593B1 (ko) 2014-05-21 2015-05-13 리소그래피 장치, 결정 방법 및 물품의 제조 방법
EP15001489.2A EP2947512B1 (en) 2014-05-21 2015-05-18 Lithography apparatus, determination method, and method of manufacturing article
US14/714,595 US9606456B2 (en) 2014-05-21 2015-05-18 Lithography apparatus, determination method, and method of manufacturing article
CN201510257107.9A CN105093845B (zh) 2014-05-21 2015-05-20 光刻装置、确定方法和产品的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014105667A JP6278833B2 (ja) 2014-05-21 2014-05-21 リソグラフィ装置、および物品の製造方法

Publications (3)

Publication Number Publication Date
JP2015220447A JP2015220447A (ja) 2015-12-07
JP2015220447A5 JP2015220447A5 (enExample) 2017-06-29
JP6278833B2 true JP6278833B2 (ja) 2018-02-14

Family

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JP2014105667A Active JP6278833B2 (ja) 2014-05-21 2014-05-21 リソグラフィ装置、および物品の製造方法

Country Status (6)

Country Link
US (1) US9606456B2 (enExample)
EP (1) EP2947512B1 (enExample)
JP (1) JP6278833B2 (enExample)
KR (1) KR101751593B1 (enExample)
CN (1) CN105093845B (enExample)
TW (1) TWI637240B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6333039B2 (ja) 2013-05-16 2018-05-30 キヤノン株式会社 インプリント装置、デバイス製造方法およびインプリント方法
JP6315904B2 (ja) * 2013-06-28 2018-04-25 キヤノン株式会社 インプリント方法、インプリント装置及びデバイスの製造方法
US10644239B2 (en) 2014-11-17 2020-05-05 Emagin Corporation High precision, high resolution collimating shadow mask and method for fabricating a micro-display
US10386731B2 (en) 2016-05-24 2019-08-20 Emagin Corporation Shadow-mask-deposition system and method therefor
TWI721170B (zh) * 2016-05-24 2021-03-11 美商伊麥傑公司 蔽蔭遮罩沉積系統及其方法
WO2020038661A1 (en) * 2018-08-23 2020-02-27 Asml Netherlands B.V. Substrate support, lithographic apparatus, substrate inspection apparatus, device manufacturing method
JP7270417B2 (ja) * 2019-03-08 2023-05-10 キヤノン株式会社 インプリント装置の制御方法、インプリント装置、および物品製造方法
CN114270273A (zh) * 2019-07-30 2022-04-01 Asml荷兰有限公司 确定标记测量序列的方法、平台设备和光刻设备
TWI786489B (zh) * 2019-12-26 2022-12-11 日商國際電氣半導體技術服務股份有限公司 電阻率測定方法、半導體裝置之製造方法、電阻率測定程式及電阻率測定器

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3365571B2 (ja) * 1993-11-10 2003-01-14 株式会社ニコン 光学式計測装置及び露光装置
JP4029181B2 (ja) * 1996-11-28 2008-01-09 株式会社ニコン 投影露光装置
JP3013837B2 (ja) * 1998-04-27 2000-02-28 日本電気株式会社 ステージ位置計測装置およびその計測方法
JP2000260827A (ja) * 1999-03-12 2000-09-22 Towa Corp 半導体チップ実装用加熱装置及び加熱方法
CN1650401B (zh) 2002-04-09 2010-04-21 株式会社尼康 曝光方法与曝光装置、以及器件的制造方法
WO2004092865A2 (ja) * 2003-04-17 2004-10-28 Nippon Kogaku Kk 選出方法、露光方法、選出装置、露光装置、並びにデバイス製造方法
JP2005217092A (ja) 2004-01-29 2005-08-11 Canon Inc 半導体露光方法及び半導体露光装置
CN100498538C (zh) 2004-05-17 2009-06-10 Asml荷兰有限公司 光刻装置和器件制造方法
KR101245070B1 (ko) 2004-06-21 2013-03-18 가부시키가이샤 니콘 노광 장치 및 그 부재의 세정 방법, 노광 장치의 메인터넌스 방법, 메인터넌스 기기, 그리고 디바이스 제조 방법
JP4614386B2 (ja) * 2005-02-04 2011-01-19 キヤノン株式会社 位置決め装置、露光装置およびそれを用いたデバイス製造方法
CN102243441B (zh) 2010-05-12 2015-06-17 上海微电子装备有限公司 温度控制装置、应用其的投影曝光装置及温度控制方法

Also Published As

Publication number Publication date
US20150338751A1 (en) 2015-11-26
TW201544914A (zh) 2015-12-01
EP2947512B1 (en) 2022-03-23
US9606456B2 (en) 2017-03-28
TWI637240B (zh) 2018-10-01
CN105093845B (zh) 2018-03-23
KR101751593B1 (ko) 2017-06-27
EP2947512A2 (en) 2015-11-25
EP2947512A3 (en) 2016-03-30
CN105093845A (zh) 2015-11-25
JP2015220447A (ja) 2015-12-07
KR20150134270A (ko) 2015-12-01

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