JP6274926B2 - 切削方法 - Google Patents

切削方法 Download PDF

Info

Publication number
JP6274926B2
JP6274926B2 JP2014053195A JP2014053195A JP6274926B2 JP 6274926 B2 JP6274926 B2 JP 6274926B2 JP 2014053195 A JP2014053195 A JP 2014053195A JP 2014053195 A JP2014053195 A JP 2014053195A JP 6274926 B2 JP6274926 B2 JP 6274926B2
Authority
JP
Japan
Prior art keywords
cutting
acid
group
cutting blade
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2014053195A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015177089A (ja
Inventor
研二 竹之内
研二 竹之内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Priority to JP2014053195A priority Critical patent/JP6274926B2/ja
Priority to TW104104274A priority patent/TWI647062B/zh
Priority to KR1020150026547A priority patent/KR102213729B1/ko
Priority to CN201510111551.XA priority patent/CN104934308B/zh
Priority to US14/659,031 priority patent/US9349647B2/en
Publication of JP2015177089A publication Critical patent/JP2015177089A/ja
Application granted granted Critical
Publication of JP6274926B2 publication Critical patent/JP6274926B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • B28D5/047—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by ultrasonic cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Dicing (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2014053195A 2014-03-17 2014-03-17 切削方法 Active JP6274926B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2014053195A JP6274926B2 (ja) 2014-03-17 2014-03-17 切削方法
TW104104274A TWI647062B (zh) 2014-03-17 2015-02-09 Cutting method
KR1020150026547A KR102213729B1 (ko) 2014-03-17 2015-02-25 절삭 방법
CN201510111551.XA CN104934308B (zh) 2014-03-17 2015-03-13 切削方法
US14/659,031 US9349647B2 (en) 2014-03-17 2015-03-16 Cutting method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014053195A JP6274926B2 (ja) 2014-03-17 2014-03-17 切削方法

Publications (2)

Publication Number Publication Date
JP2015177089A JP2015177089A (ja) 2015-10-05
JP6274926B2 true JP6274926B2 (ja) 2018-02-07

Family

ID=54069670

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014053195A Active JP6274926B2 (ja) 2014-03-17 2014-03-17 切削方法

Country Status (5)

Country Link
US (1) US9349647B2 (ko)
JP (1) JP6274926B2 (ko)
KR (1) KR102213729B1 (ko)
CN (1) CN104934308B (ko)
TW (1) TWI647062B (ko)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018181907A (ja) * 2017-04-04 2018-11-15 株式会社ディスコ 加工方法
JP2018181901A (ja) * 2017-04-04 2018-11-15 株式会社ディスコ 加工方法
JP2018181903A (ja) * 2017-04-04 2018-11-15 株式会社ディスコ 加工方法
JP2018181909A (ja) * 2017-04-04 2018-11-15 株式会社ディスコ 加工方法
JP2018181908A (ja) 2017-04-04 2018-11-15 株式会社ディスコ 加工方法
JP6890885B2 (ja) * 2017-04-04 2021-06-18 株式会社ディスコ 加工方法
JP6824581B2 (ja) * 2017-04-04 2021-02-03 株式会社ディスコ 加工方法
JP6824582B2 (ja) * 2017-04-04 2021-02-03 株式会社ディスコ 加工方法
JP2018181899A (ja) * 2017-04-04 2018-11-15 株式会社ディスコ 板状被加工物の加工方法
JP2018181902A (ja) * 2017-04-04 2018-11-15 株式会社ディスコ 加工方法
JP2018181900A (ja) * 2017-04-04 2018-11-15 株式会社ディスコ 板状被加工物の加工方法
JP6949421B2 (ja) * 2017-05-09 2021-10-13 株式会社ディスコ 加工方法
JP6836491B2 (ja) * 2017-11-07 2021-03-03 株式会社荏原製作所 デバイスが形成された基板を個々のチップに分割するための方法および装置
JP6994363B2 (ja) * 2017-11-22 2022-01-14 株式会社ディスコ 切削装置
JP2019126746A (ja) 2018-01-22 2019-08-01 株式会社ディスコ 加工装置
JP7150390B2 (ja) * 2018-02-14 2022-10-11 株式会社ディスコ 加工装置
JP7340911B2 (ja) * 2018-08-17 2023-09-08 株式会社ディスコ パッケージ基板の加工方法
TW202126408A (zh) 2020-01-02 2021-07-16 財團法人工業技術研究院 毛邊清除裝置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07211670A (ja) * 1994-01-13 1995-08-11 Ryoden Semiconductor Syst Eng Kk 半導体装置のダイシング方法
JP3128508B2 (ja) * 1996-04-12 2001-01-29 株式会社アルテクス 超音波振動カッター
US6310017B1 (en) * 1999-02-01 2001-10-30 Ct Associates, Inc. Cleaner composition, method for making and using same
JP4394210B2 (ja) 1999-09-08 2010-01-06 株式会社ディスコ 切削方法
JP2001308037A (ja) * 2000-04-26 2001-11-02 Seiko Epson Corp ダイシング方法
JP2001334494A (ja) * 2000-05-26 2001-12-04 Suzuki Motor Corp 超音波カッタ
JP2004153086A (ja) * 2002-10-31 2004-05-27 Showa Denko Kk 金属研磨組成物、金属膜の研磨方法および基板の製造方法
JP2004259936A (ja) 2003-02-26 2004-09-16 Disco Abrasive Syst Ltd Ｑｆｎ基板の処理方法
US7855130B2 (en) * 2003-04-21 2010-12-21 International Business Machines Corporation Corrosion inhibitor additives to prevent semiconductor device bond-pad corrosion during wafer dicing operations
EP1628336B1 (en) * 2004-08-18 2012-01-04 Mitsubishi Gas Chemical Company, Inc. Cleaning liquid and cleaning method
JP2007125667A (ja) 2005-11-07 2007-05-24 Disco Abrasive Syst Ltd 基板の切断装置
US7531431B2 (en) * 2006-05-19 2009-05-12 Cree, Inc. Methods for reducing contamination of semiconductor devices and materials during wafer processing
JP2008227187A (ja) 2007-03-13 2008-09-25 Nec Electronics Corp ダイシングブレード
JP2009032726A (ja) * 2007-07-24 2009-02-12 Disco Abrasive Syst Ltd ウエーハの分割方法
US8883701B2 (en) * 2010-07-09 2014-11-11 Air Products And Chemicals, Inc. Method for wafer dicing and composition useful thereof
SG11201404531UA (en) * 2012-02-01 2014-09-26 Hitachi Chemical Co Ltd Polishing liquid for metal and polishing method
JP2013161998A (ja) * 2012-02-07 2013-08-19 Disco Abrasive Syst Ltd 切削方法
JP2013184277A (ja) 2012-03-09 2013-09-19 Disco Corp バイト切削装置

Also Published As

Publication number Publication date
TWI647062B (zh) 2019-01-11
JP2015177089A (ja) 2015-10-05
US9349647B2 (en) 2016-05-24
TW201544234A (zh) 2015-12-01
CN104934308B (zh) 2020-03-17
US20150262881A1 (en) 2015-09-17
KR20150108310A (ko) 2015-09-25
CN104934308A (zh) 2015-09-23
KR102213729B1 (ko) 2021-02-05

Similar Documents

Publication Publication Date Title
JP6274926B2 (ja) 切削方法
CN108711550B (zh) 加工方法
JP6366308B2 (ja) 加工方法
KR20180112691A (ko) 가공 방법
TWI733994B (zh) 加工方法
CN108695145B (zh) 加工方法
CN108878355B (zh) 加工方法
TWI752183B (zh) 加工方法
JP6385085B2 (ja) バイト切削方法
TWI738980B (zh) 板狀被加工物的加工方法
US10665482B2 (en) Plate-shaped workpiece processing method including first and second cutting steps, where the second step includes use of a cutting fluid containing an organic acid and an oxidizing agent
TW202245023A (zh) 基板之加工方法
TW201838014A (zh) 加工方法
TW201839832A (zh) 加工方法
CN117621283A (zh) 切削装置

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20170119

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20170911

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170919

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20171106

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20180109

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20180109

R150 Certificate of patent or registration of utility model

Ref document number: 6274926

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250