JP6238226B2 - 半導体レーザ装置 - Google Patents

半導体レーザ装置 Download PDF

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Publication number
JP6238226B2
JP6238226B2 JP2013205137A JP2013205137A JP6238226B2 JP 6238226 B2 JP6238226 B2 JP 6238226B2 JP 2013205137 A JP2013205137 A JP 2013205137A JP 2013205137 A JP2013205137 A JP 2013205137A JP 6238226 B2 JP6238226 B2 JP 6238226B2
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Japan
Prior art keywords
electrode pad
face
semiconductor laser
chip
wire
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Active
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JP2013205137A
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English (en)
Japanese (ja)
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JP2015070200A (ja
JP2015070200A5 (enExample
Inventor
靖夫 山崎
靖夫 山崎
岡田　亘正
亘正 岡田
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Sumitomo Electric Device Innovations Inc
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Sumitomo Electric Device Innovations Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Sumitomo Electric Device Innovations Inc filed Critical Sumitomo Electric Device Innovations Inc
Priority to JP2013205137A priority Critical patent/JP6238226B2/ja
Priority to US14/500,093 priority patent/US9397473B2/en
Publication of JP2015070200A publication Critical patent/JP2015070200A/ja
Publication of JP2015070200A5 publication Critical patent/JP2015070200A5/ja
Application granted granted Critical
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0427—Electrical excitation ; Circuits therefor for applying modulation to the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06226—Modulation at ultra-high frequencies

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
JP2013205137A 2013-09-30 2013-09-30 半導体レーザ装置 Active JP6238226B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2013205137A JP6238226B2 (ja) 2013-09-30 2013-09-30 半導体レーザ装置
US14/500,093 US9397473B2 (en) 2013-09-30 2014-09-29 Laser diode and transmitter module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013205137A JP6238226B2 (ja) 2013-09-30 2013-09-30 半導体レーザ装置

Publications (3)

Publication Number Publication Date
JP2015070200A JP2015070200A (ja) 2015-04-13
JP2015070200A5 JP2015070200A5 (enExample) 2016-11-17
JP6238226B2 true JP6238226B2 (ja) 2017-11-29

Family

ID=52740148

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013205137A Active JP6238226B2 (ja) 2013-09-30 2013-09-30 半導体レーザ装置

Country Status (2)

Country Link
US (1) US9397473B2 (enExample)
JP (1) JP6238226B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6512602B2 (ja) 2014-06-02 2019-05-15 住友電工デバイス・イノベーション株式会社 半導体レーザ素子
JP6897928B2 (ja) * 2016-01-14 2021-07-07 住友電工デバイス・イノベーション株式会社 光半導体素子の製造方法および光半導体素子
KR101929465B1 (ko) * 2016-10-18 2019-03-14 주식회사 옵텔라 광학모듈
US20220140567A1 (en) * 2019-03-08 2022-05-05 Rohm Co., Ltd. Semiconductor laser device

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03203281A (ja) * 1989-12-28 1991-09-04 Toshiba Corp 半導体レーザ装置
JPH0582907A (ja) * 1991-09-20 1993-04-02 Fujitsu Ltd 半導体レーザアレイおよびその駆動方法
JPH0851256A (ja) * 1995-07-21 1996-02-20 Hitachi Ltd 半導体レーザ
US6553044B1 (en) * 1998-10-20 2003-04-22 Quantum Devices, Inc. Method and apparatus for reducing electrical and thermal crosstalk of a laser array
JP3896723B2 (ja) * 1999-03-26 2007-03-22 松下電器産業株式会社 窒化物半導体レーザ素子およびその製造方法
US6653662B2 (en) * 2000-11-01 2003-11-25 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device, method for fabricating the same, and method for driving the same
DE10239003A1 (de) * 2001-09-17 2003-04-03 Heidelberger Druckmasch Ag Mehrstrahllaserlichtquelle mit variablem Laserlichtquellenabstand zur Bebilderung von Druckformen
JP2003264334A (ja) * 2002-03-08 2003-09-19 Hitachi Ltd 半導体レーザ素子及び半導体レーザモジュール
JP2004281682A (ja) * 2003-03-14 2004-10-07 Sumitomo Electric Ind Ltd 光送信装置
JP4620401B2 (ja) * 2004-07-21 2011-01-26 三菱電機株式会社 半導体レーザ素子
JP4815814B2 (ja) * 2005-02-04 2011-11-16 三菱電機株式会社 光モジュール
JP4411540B2 (ja) * 2005-09-15 2010-02-10 ソニー株式会社 半導体レーザ装置
US7492798B2 (en) * 2005-12-20 2009-02-17 Finisar Corporation Modular transistor outline can with internal components
US7656914B1 (en) * 2007-02-15 2010-02-02 Bookham Technology Plc Directly-modulated diode lasers with reduced overshoot
JP2010272569A (ja) * 2009-05-19 2010-12-02 Panasonic Corp 半導体レーザ装置
JP2010272784A (ja) * 2009-05-25 2010-12-02 Panasonic Corp 半導体レーザ装置
US8821042B2 (en) 2011-07-04 2014-09-02 Sumitomo Electic Industries, Ltd. Optical module with lens assembly directly mounted on carrier by soldering and laser diode indirectly mounted on carrier through sub-mount

Also Published As

Publication number Publication date
US9397473B2 (en) 2016-07-19
JP2015070200A (ja) 2015-04-13
US20150092803A1 (en) 2015-04-02

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