JP2015070200A5 - - Google Patents

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Publication number
JP2015070200A5
JP2015070200A5 JP2013205137A JP2013205137A JP2015070200A5 JP 2015070200 A5 JP2015070200 A5 JP 2015070200A5 JP 2013205137 A JP2013205137 A JP 2013205137A JP 2013205137 A JP2013205137 A JP 2013205137A JP 2015070200 A5 JP2015070200 A5 JP 2015070200A5
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JP
Japan
Prior art keywords
face
electrode pad
semiconductor layer
type semiconductor
conductive type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2013205137A
Other languages
English (en)
Japanese (ja)
Other versions
JP6238226B2 (ja
JP2015070200A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2013205137A priority Critical patent/JP6238226B2/ja
Priority claimed from JP2013205137A external-priority patent/JP6238226B2/ja
Priority to US14/500,093 priority patent/US9397473B2/en
Publication of JP2015070200A publication Critical patent/JP2015070200A/ja
Publication of JP2015070200A5 publication Critical patent/JP2015070200A5/ja
Application granted granted Critical
Publication of JP6238226B2 publication Critical patent/JP6238226B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2013205137A 2013-09-30 2013-09-30 半導体レーザ装置 Active JP6238226B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2013205137A JP6238226B2 (ja) 2013-09-30 2013-09-30 半導体レーザ装置
US14/500,093 US9397473B2 (en) 2013-09-30 2014-09-29 Laser diode and transmitter module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013205137A JP6238226B2 (ja) 2013-09-30 2013-09-30 半導体レーザ装置

Publications (3)

Publication Number Publication Date
JP2015070200A JP2015070200A (ja) 2015-04-13
JP2015070200A5 true JP2015070200A5 (enExample) 2016-11-17
JP6238226B2 JP6238226B2 (ja) 2017-11-29

Family

ID=52740148

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013205137A Active JP6238226B2 (ja) 2013-09-30 2013-09-30 半導体レーザ装置

Country Status (2)

Country Link
US (1) US9397473B2 (enExample)
JP (1) JP6238226B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6512602B2 (ja) 2014-06-02 2019-05-15 住友電工デバイス・イノベーション株式会社 半導体レーザ素子
JP6897928B2 (ja) * 2016-01-14 2021-07-07 住友電工デバイス・イノベーション株式会社 光半導体素子の製造方法および光半導体素子
KR101929465B1 (ko) * 2016-10-18 2019-03-14 주식회사 옵텔라 광학모듈
US20220140567A1 (en) * 2019-03-08 2022-05-05 Rohm Co., Ltd. Semiconductor laser device

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03203281A (ja) * 1989-12-28 1991-09-04 Toshiba Corp 半導体レーザ装置
JPH0582907A (ja) * 1991-09-20 1993-04-02 Fujitsu Ltd 半導体レーザアレイおよびその駆動方法
JPH0851256A (ja) * 1995-07-21 1996-02-20 Hitachi Ltd 半導体レーザ
US6553044B1 (en) * 1998-10-20 2003-04-22 Quantum Devices, Inc. Method and apparatus for reducing electrical and thermal crosstalk of a laser array
JP3896723B2 (ja) * 1999-03-26 2007-03-22 松下電器産業株式会社 窒化物半導体レーザ素子およびその製造方法
US6653662B2 (en) * 2000-11-01 2003-11-25 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device, method for fabricating the same, and method for driving the same
DE10239003A1 (de) * 2001-09-17 2003-04-03 Heidelberger Druckmasch Ag Mehrstrahllaserlichtquelle mit variablem Laserlichtquellenabstand zur Bebilderung von Druckformen
JP2003264334A (ja) * 2002-03-08 2003-09-19 Hitachi Ltd 半導体レーザ素子及び半導体レーザモジュール
JP2004281682A (ja) * 2003-03-14 2004-10-07 Sumitomo Electric Ind Ltd 光送信装置
JP4620401B2 (ja) * 2004-07-21 2011-01-26 三菱電機株式会社 半導体レーザ素子
JP4815814B2 (ja) * 2005-02-04 2011-11-16 三菱電機株式会社 光モジュール
JP4411540B2 (ja) * 2005-09-15 2010-02-10 ソニー株式会社 半導体レーザ装置
US7492798B2 (en) * 2005-12-20 2009-02-17 Finisar Corporation Modular transistor outline can with internal components
US7656914B1 (en) * 2007-02-15 2010-02-02 Bookham Technology Plc Directly-modulated diode lasers with reduced overshoot
JP2010272569A (ja) * 2009-05-19 2010-12-02 Panasonic Corp 半導体レーザ装置
JP2010272784A (ja) * 2009-05-25 2010-12-02 Panasonic Corp 半導体レーザ装置
US8821042B2 (en) 2011-07-04 2014-09-02 Sumitomo Electic Industries, Ltd. Optical module with lens assembly directly mounted on carrier by soldering and laser diode indirectly mounted on carrier through sub-mount

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