JP6228873B2 - 半導体光素子の製造方法 - Google Patents

半導体光素子の製造方法 Download PDF

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JP6228873B2
JP6228873B2 JP2014056734A JP2014056734A JP6228873B2 JP 6228873 B2 JP6228873 B2 JP 6228873B2 JP 2014056734 A JP2014056734 A JP 2014056734A JP 2014056734 A JP2014056734 A JP 2014056734A JP 6228873 B2 JP6228873 B2 JP 6228873B2
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germanium
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light emitting
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JP2015179748A (ja
JP2015179748A5 (https=
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和樹 谷
和樹 谷
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Hitachi Ltd
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Hitachi Ltd
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JP2014056734A 2014-03-19 2014-03-19 半導体光素子の製造方法 Active JP6228873B2 (ja)

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JP2014056734A JP6228873B2 (ja) 2014-03-19 2014-03-19 半導体光素子の製造方法

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JP2015179748A JP2015179748A (ja) 2015-10-08
JP2015179748A5 JP2015179748A5 (https=) 2016-10-06
JP6228873B2 true JP6228873B2 (ja) 2017-11-08

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JP6774792B2 (ja) * 2016-06-22 2020-10-28 旭化成エレクトロニクス株式会社 赤外線デバイス

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60140754A (ja) * 1983-12-28 1985-07-25 Fujitsu Ltd 半導体装置の製造方法
JP2686764B2 (ja) * 1988-03-11 1997-12-08 国際電信電話株式会社 光半導体素子の製造方法
US6309975B1 (en) * 1997-03-14 2001-10-30 Micron Technology, Inc. Methods of making implanted structures
JPH10261835A (ja) * 1997-03-21 1998-09-29 Mitsubishi Electric Corp 半導体レーザ装置、及びその製造方法
JP3644569B2 (ja) * 1997-04-22 2005-04-27 富士通株式会社 半導体装置の製造方法
US6812495B2 (en) * 2002-06-19 2004-11-02 Massachusetts Institute Of Technology Ge photodetectors
US20060133754A1 (en) * 2004-12-21 2006-06-22 Vipulkumar Patel Ultra low-loss CMOS compatible silicon waveguides
JP4825269B2 (ja) * 2005-10-28 2011-11-30 マサチューセッツ インスティテュート オブ テクノロジー シリコン上のゲルマニウムレーザーの方法と構造
JP2007173590A (ja) * 2005-12-22 2007-07-05 Toshiba Corp 半導体発光材料およびそれを用いた発光素子
WO2010055750A1 (ja) * 2008-11-12 2010-05-20 株式会社日立製作所 発光素子並びに受光素子及びその製造方法
JP5565148B2 (ja) * 2010-06-30 2014-08-06 富士通株式会社 半導体光素子
WO2012068451A2 (en) * 2010-11-19 2012-05-24 Arizona Board of Regents, a body corporate of the state of Arizona, acting for and on behalf of Dilute sn-doped ge alloys
WO2013118248A1 (ja) * 2012-02-06 2013-08-15 株式会社日立製作所 発光素子

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