JP6224074B2 - レーザナノ加工装置および方法 - Google Patents

レーザナノ加工装置および方法 Download PDF

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Publication number
JP6224074B2
JP6224074B2 JP2015504967A JP2015504967A JP6224074B2 JP 6224074 B2 JP6224074 B2 JP 6224074B2 JP 2015504967 A JP2015504967 A JP 2015504967A JP 2015504967 A JP2015504967 A JP 2015504967A JP 6224074 B2 JP6224074 B2 JP 6224074B2
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Japan
Prior art keywords
pulse
module
light
plasma
emitting
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Japanese (ja)
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JP2015520938A5 (enExample
JP2015520938A (ja
Inventor
フランソワ クーボイジーエ
フランソワ クーボイジーエ
ピエール−アンブロワーズ ラクールト
ピエール−アンブロワーズ ラクールト
マキシム ジャコウ
マキシム ジャコウ
ルカ フーファロ
ルカ フーファロ
ジョン デュドレ
ジョン デュドレ
ラバシュレリー ミシェル ド
ラバシュレリー ミシェル ド
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Centre National de la Recherche Scientifique CNRS
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Centre National de la Recherche Scientifique CNRS
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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
    • B23K26/0613—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams having a common axis
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B23K26/382—Removing material by boring or cutting by boring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/55—Working by transmitting the laser beam through or within the workpiece for creating voids inside the workpiece, e.g. for forming flow passages or flow patterns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H01L21/3247—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering for altering the shape, e.g. smoothing the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means
    • H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
    • H05K3/0032—Etching of the substrate by chemical or physical means by laser ablation of organic insulating material
    • H05K3/0038—Etching of the substrate by chemical or physical means by laser ablation of organic insulating material combined with laser drilling through a metal layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/30—Organic material
    • B23K2103/40—Paper
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/52—Ceramics

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Laser Beam Processing (AREA)
  • Lasers (AREA)
JP2015504967A 2012-04-13 2013-04-12 レーザナノ加工装置および方法 Active JP6224074B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1253404 2012-04-13
FR1253404A FR2989294B1 (fr) 2012-04-13 2012-04-13 Dispositif et methode de nano-usinage par laser
PCT/EP2013/057673 WO2013153195A1 (fr) 2012-04-13 2013-04-12 Dispositif et methode de nano-usinage par laser

Publications (3)

Publication Number Publication Date
JP2015520938A JP2015520938A (ja) 2015-07-23
JP2015520938A5 JP2015520938A5 (enExample) 2016-04-07
JP6224074B2 true JP6224074B2 (ja) 2017-11-01

Family

ID=48463923

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015504967A Active JP6224074B2 (ja) 2012-04-13 2013-04-12 レーザナノ加工装置および方法

Country Status (6)

Country Link
US (1) US10131017B2 (enExample)
EP (1) EP2836332B1 (enExample)
JP (1) JP6224074B2 (enExample)
FR (1) FR2989294B1 (enExample)
LT (1) LT2836332T (enExample)
WO (1) WO2013153195A1 (enExample)

Families Citing this family (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012010708B4 (de) * 2012-05-30 2021-12-23 Carl Zeiss Microscopy Gmbh Kombiniertes bearbeitungssystem zur bearbeitung mittels laser und fokussierten ionenstrahlen
US8945731B2 (en) 2012-06-29 2015-02-03 Seagate Technology Llc Interlayer for device including NFT and cladding layers
WO2014079478A1 (en) 2012-11-20 2014-05-30 Light In Light Srl High speed laser processing of transparent materials
EP2754524B1 (de) 2013-01-15 2015-11-25 Corning Laser Technologies GmbH Verfahren und Vorrichtung zum laserbasierten Bearbeiten von flächigen Substraten, d.h. Wafer oder Glaselement, unter Verwendung einer Laserstrahlbrennlinie
US9701564B2 (en) 2013-01-15 2017-07-11 Corning Incorporated Systems and methods of glass cutting by inducing pulsed laser perforations into glass articles
EP2781296B1 (de) 2013-03-21 2020-10-21 Corning Laser Technologies GmbH Vorrichtung und verfahren zum ausschneiden von konturen aus flächigen substraten mittels laser
KR102226808B1 (ko) 2013-03-27 2021-03-11 하마마츠 포토닉스 가부시키가이샤 레이저 가공 장치 및 레이저 가공 방법
JP6272300B2 (ja) 2013-03-27 2018-01-31 浜松ホトニクス株式会社 レーザ加工装置及びレーザ加工方法
CN105102179B (zh) * 2013-03-27 2017-04-26 浜松光子学株式会社 激光加工装置及激光加工方法
US9914183B2 (en) * 2013-03-27 2018-03-13 Hamamatsu Photonics K.K. Laser machining device and laser machining method
FR3012059B1 (fr) * 2013-10-17 2016-01-08 Centre Nat Rech Scient Methode et dispositif de micro-usinage par laser
US10005152B2 (en) * 2013-11-19 2018-06-26 Rofin-Sinar Technologies Llc Method and apparatus for spiral cutting a glass tube using filamentation by burst ultrafast laser pulses
KR101407993B1 (ko) * 2013-12-10 2014-06-18 주식회사 엘티에스 기판 절단방법
US9815730B2 (en) 2013-12-17 2017-11-14 Corning Incorporated Processing 3D shaped transparent brittle substrate
US9850160B2 (en) 2013-12-17 2017-12-26 Corning Incorporated Laser cutting of display glass compositions
US11556039B2 (en) 2013-12-17 2023-01-17 Corning Incorporated Electrochromic coated glass articles and methods for laser processing the same
US20150165560A1 (en) 2013-12-17 2015-06-18 Corning Incorporated Laser processing of slots and holes
US9676167B2 (en) * 2013-12-17 2017-06-13 Corning Incorporated Laser processing of sapphire substrate and related applications
US9687936B2 (en) 2013-12-17 2017-06-27 Corning Incorporated Transparent material cutting with ultrafast laser and beam optics
US9701563B2 (en) 2013-12-17 2017-07-11 Corning Incorporated Laser cut composite glass article and method of cutting
US9517963B2 (en) 2013-12-17 2016-12-13 Corning Incorporated Method for rapid laser drilling of holes in glass and products made therefrom
US10442719B2 (en) 2013-12-17 2019-10-15 Corning Incorporated Edge chamfering methods
JP2015188939A (ja) * 2014-03-31 2015-11-02 アイシン精機株式会社 レーザ接合方法、レーザ接合品及びレーザ接合装置
US10239155B1 (en) * 2014-04-30 2019-03-26 The Boeing Company Multiple laser beam processing
JP6355194B2 (ja) * 2014-05-30 2018-07-11 国立研究開発法人理化学研究所 半導体基材における除去加工装置およびその方法
KR102445217B1 (ko) 2014-07-08 2022-09-20 코닝 인코포레이티드 재료를 레이저 가공하는 방법 및 장치
MX2017000440A (es) * 2014-07-11 2017-08-16 Corning Inc Sistemas y metodos para cortado de vidrio al inducir perforaciones por láser pulsado en artículos de vidrio.
WO2016010991A1 (en) 2014-07-14 2016-01-21 Corning Incorporated Interface block; system for and method of cutting a substrate being transparent within a range of wavelengths using such interface block
TWI659793B (zh) 2014-07-14 2019-05-21 美商康寧公司 用於使用可調整雷射束焦線來處理透明材料的系統及方法
US9617180B2 (en) 2014-07-14 2017-04-11 Corning Incorporated Methods and apparatuses for fabricating glass articles
WO2016010943A2 (en) 2014-07-14 2016-01-21 Corning Incorporated Method and system for arresting crack propagation
US10611667B2 (en) 2014-07-14 2020-04-07 Corning Incorporated Method and system for forming perforations
DE102014116957A1 (de) 2014-11-19 2016-05-19 Trumpf Laser- Und Systemtechnik Gmbh Optisches System zur Strahlformung
DE102014116958B9 (de) 2014-11-19 2017-10-05 Trumpf Laser- Und Systemtechnik Gmbh Optisches System zur Strahlformung eines Laserstrahls, Laserbearbeitungsanlage, Verfahren zur Materialbearbeitung und Verwenden einer gemeinsamen langgezogenen Fokuszone zur Lasermaterialbearbeitung
KR102138964B1 (ko) 2014-11-19 2020-07-28 트룸프 레이저-운트 시스템테크닉 게엠베하 비대칭 광학 빔 정형을 위한 시스템
US10047001B2 (en) 2014-12-04 2018-08-14 Corning Incorporated Glass cutting systems and methods using non-diffracting laser beams
EP3245166B1 (en) 2015-01-12 2020-05-27 Corning Incorporated Laser cutting of thermally tempered substrates using the multi photon absorption method
EP3848334A1 (en) 2015-03-24 2021-07-14 Corning Incorporated Alkaline earth boro-aluminosilicate glass article with laser cut edge
WO2016160391A1 (en) 2015-03-27 2016-10-06 Corning Incorporated Gas permeable window and method of fabricating the same
US11186060B2 (en) 2015-07-10 2021-11-30 Corning Incorporated Methods of continuous fabrication of holes in flexible substrate sheets and products relating to the same
CN105081565A (zh) * 2015-08-10 2015-11-25 武汉华工激光工程有限责任公司 一种用整形光束进行材料加工的系统及方法
DE102015218564B4 (de) 2015-09-28 2020-07-30 Trumpf Laser Gmbh Laserbearbeitungsmaschine und Verfahren zum Laserschweißen von Werkstücken
US10494290B2 (en) 2016-01-14 2019-12-03 Corning Incorporated Dual-airy-beam systems and methods for processing glass substrates
DE102016102768A1 (de) 2016-02-17 2017-08-17 Schott Ag Verfahren zur Kantenbearbeitung von Glaselementen und verfahrensgemäß bearbeitetes Glaselement
MY194570A (en) 2016-05-06 2022-12-02 Corning Inc Laser cutting and removal of contoured shapes from transparent substrates
US10410883B2 (en) 2016-06-01 2019-09-10 Corning Incorporated Articles and methods of forming vias in substrates
US10794679B2 (en) 2016-06-29 2020-10-06 Corning Incorporated Method and system for measuring geometric parameters of through holes
FR3054151B1 (fr) * 2016-07-25 2018-07-13 Amplitude Systemes Procede et appareil pour la decoupe de materiaux par multi-faisceaux laser femtoseconde
KR102363273B1 (ko) * 2016-07-25 2022-02-15 엠플리튜드 다중 빔 펨토초 레이저에 의해 재료를 절단하는 방법 및 장치
CN109803934A (zh) 2016-07-29 2019-05-24 康宁股份有限公司 用于激光处理的装置和方法
WO2018044843A1 (en) 2016-08-30 2018-03-08 Corning Incorporated Laser processing of transparent materials
CN109803786B (zh) 2016-09-30 2021-05-07 康宁股份有限公司 使用非轴对称束斑对透明工件进行激光加工的设备和方法
CN107876971A (zh) * 2016-09-30 2018-04-06 上海微电子装备（集团）股份有限公司 一种激光切割装置及方法
LT3311947T (lt) 2016-09-30 2019-12-27 Corning Incorporated Skaidrių ruošinių lazerinio apdirbimo, naudojant spindulių pluošto dėmes be simetrijos ašių, būdas
DE102016120244A1 (de) * 2016-10-24 2018-04-26 Cl Schutzrechtsverwaltungs Gmbh Vorrichtung zur additiven Herstellung dreidimensionaler Objekte
JP7066701B2 (ja) 2016-10-24 2022-05-13 コーニング インコーポレイテッド シート状ガラス基体のレーザに基づく加工のための基体処理ステーション
US10752534B2 (en) 2016-11-01 2020-08-25 Corning Incorporated Apparatuses and methods for laser processing laminate workpiece stacks
EP3523083B1 (en) * 2016-11-18 2023-08-09 IPG Photonics Corporation System and method for laser processing of materials.
US10688599B2 (en) 2017-02-09 2020-06-23 Corning Incorporated Apparatus and methods for laser processing transparent workpieces using phase shifted focal lines
US10580725B2 (en) 2017-05-25 2020-03-03 Corning Incorporated Articles having vias with geometry attributes and methods for fabricating the same
US11078112B2 (en) 2017-05-25 2021-08-03 Corning Incorporated Silica-containing substrates with vias having an axially variable sidewall taper and methods for forming the same
US10626040B2 (en) 2017-06-15 2020-04-21 Corning Incorporated Articles capable of individual singulation
US12180108B2 (en) 2017-12-19 2024-12-31 Corning Incorporated Methods for etching vias in glass-based articles employing positive charge organic molecules
US11554984B2 (en) 2018-02-22 2023-01-17 Corning Incorporated Alkali-free borosilicate glasses with low post-HF etch roughness
KR102375235B1 (ko) * 2020-09-08 2022-03-16 주식회사 필옵틱스 레이저 가공 시스템 및 방법
US12434331B2 (en) 2020-09-11 2025-10-07 Corning Incorporated Laser forming non-square edges in transparent workpieces using modified airy beams
NL2026552B1 (en) * 2020-09-11 2022-05-16 Corning Inc Laser forming non-square edges in transparent workpieces using modified airy beams
FR3121349B1 (fr) * 2021-04-01 2024-08-16 Keranova Systeme de decoupe d’un tissu en portions par generation de bulles de gaz oblongues
JP7730722B2 (ja) 2021-10-25 2025-08-28 ギガフォトン株式会社 極端紫外光生成方法、極端紫外光生成装置、及び電子デバイスの製造方法
KR20230064664A (ko) 2021-11-03 2023-05-11 삼성디스플레이 주식회사 광학 시스템

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3341795B2 (ja) 1994-01-13 2002-11-05 富士写真フイルム株式会社 レーザ走査発振装置
US5394411A (en) * 1994-02-16 1995-02-28 University Of Maryland, College Park Method for producing high intensity optical through x-ray waveguide and applications
KR970008386A (ko) * 1995-07-07 1997-02-24 하라 세이지 기판의 할단(割斷)방법 및 그 할단장치
US6181463B1 (en) * 1997-03-21 2001-01-30 Imra America, Inc. Quasi-phase-matched parametric chirped pulse amplification systems
JP3982136B2 (ja) 2000-02-04 2007-09-26 セイコーエプソン株式会社 レーザ加工方法及びその装置
WO2002034452A1 (en) * 2000-10-25 2002-05-02 Optek Limited Laser cutting method and apparatus for optical fibres or waveguides
US6756563B2 (en) * 2002-03-07 2004-06-29 Orbotech Ltd. System and method for forming holes in substrates containing glass
JP4158481B2 (ja) * 2002-10-21 2008-10-01 セイコーエプソン株式会社 レーザー加工方法およびその装置、並びにその装置を用いた穴あけ加工方法
JP2004154813A (ja) * 2002-11-06 2004-06-03 National Institute Of Advanced Industrial & Technology レーザ加工方法および装置
JP3726136B2 (ja) * 2002-11-22 2005-12-14 独立行政法人産業技術総合研究所 ベッセルビーム生成方法および装置
JP2005028438A (ja) * 2003-07-11 2005-02-03 Disco Abrasive Syst Ltd レーザ光線を利用する加工装置
US7486705B2 (en) 2004-03-31 2009-02-03 Imra America, Inc. Femtosecond laser processing system with process parameters, controls and feedback
JP2006123228A (ja) * 2004-10-27 2006-05-18 Disco Abrasive Syst Ltd レーザ加工方法およびレーザ加工装置
US7303977B2 (en) * 2004-11-10 2007-12-04 Intel Corporation Laser micromachining method
JP4618719B2 (ja) * 2005-03-25 2011-01-26 財団法人電力中央研究所 超短パルスレーザビームのフィラメントの形成方法および発生装置
JP4838531B2 (ja) * 2005-04-27 2011-12-14 サイバーレーザー株式会社 板状体切断方法並びにレーザ加工装置
JP4800661B2 (ja) * 2005-05-09 2011-10-26 株式会社ディスコ レーザ光線を利用する加工装置
DE102006042280A1 (de) * 2005-09-08 2007-06-06 IMRA America, Inc., Ann Arbor Bearbeitung von transparentem Material mit einem Ultrakurzpuls-Laser
US9138913B2 (en) * 2005-09-08 2015-09-22 Imra America, Inc. Transparent material processing with an ultrashort pulse laser
JP4483793B2 (ja) 2006-01-27 2010-06-16 セイコーエプソン株式会社 微細構造体の製造方法及び製造装置
JP4833773B2 (ja) * 2006-08-31 2011-12-07 本田技研工業株式会社 微細穴開け加工方法
JP5068596B2 (ja) * 2007-07-30 2012-11-07 公益財団法人高輝度光科学研究センター パルス整形装置、パルス整形方法、及び電子銃
JP4467633B2 (ja) * 2008-03-24 2010-05-26 丸文株式会社 ビーム加工装置、ビーム加工方法およびビーム加工基板
JP5531261B2 (ja) * 2009-03-27 2014-06-25 国立大学法人 千葉大学 レーザー加工方法、円偏光光渦レーザービームを用いたレーザー加工方法、針状体を有する部材の製造方法、および針状体を有する部材
WO2011091316A2 (en) 2010-01-22 2011-07-28 Newport Corporation Broadly tunable optical parametric oscillator
KR102088722B1 (ko) 2010-07-12 2020-03-17 로핀-시나르 테크놀로지스 엘엘씨 레이저 필라멘테이션에 의한 재료 가공 방법

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US20150158120A1 (en) 2015-06-11
EP2836332B1 (fr) 2016-12-28
US10131017B2 (en) 2018-11-20
EP2836332A1 (fr) 2015-02-18
JP2015520938A (ja) 2015-07-23

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