JP6203884B2 - ハウジング - Google Patents
ハウジング Download PDFInfo
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- JP6203884B2 JP6203884B2 JP2016044118A JP2016044118A JP6203884B2 JP 6203884 B2 JP6203884 B2 JP 6203884B2 JP 2016044118 A JP2016044118 A JP 2016044118A JP 2016044118 A JP2016044118 A JP 2016044118A JP 6203884 B2 JP6203884 B2 JP 6203884B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K5/00—Casings, cabinets or drawers for electric apparatus
- H05K5/06—Hermetically-sealed casings
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
- C03C27/02—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing by fusing glass directly to metal
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C29/00—Joining metals with the aid of glass
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/062—Glass compositions containing silica with less than 40% silica by weight
- C03C3/064—Glass compositions containing silica with less than 40% silica by weight containing boron
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/062—Glass compositions containing silica with less than 40% silica by weight
- C03C3/064—Glass compositions containing silica with less than 40% silica by weight containing boron
- C03C3/066—Glass compositions containing silica with less than 40% silica by weight containing boron containing zinc
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
- C03C8/08—Frit compositions, i.e. in a powdered or comminuted form containing phosphorus
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
- C03C8/20—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing titanium compounds; containing zirconium compounds
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/24—Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
- B32B2457/202—LCD, i.e. liquid crystal displays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48235—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a via metallisation of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
Description
基体であって、少なくとも1つの電子機能素子用の実装領域を少なくとも部分的に画定する上面を有し、それにより、少なくとも1つの電子機能素子用のヒートシンクを形成し、下面及び側面を更に有する基体と、
少なくとも1つの電子機能素子用の少なくとも1つの接続体であって、少なくとも、1つのガラス層によって前記基体に接合されている少なくとも1つの接続体と、
を具備し、
前記結合するガラス層は、アルカリチタンケイ酸塩ガラスによって提供される、ハウジングである。
少なくとも1つの基体であって、少なくとも1つの電子機能素子用の実装領域を少なくとも部分的に画定する上面を有し、それにより少なくとも1つの電子機能素子用のヒートシンクを形成する、少なくとも1つの基体を準備するステップと、
少なくとも1つの電子機能素子用の少なくとも1つの接続体と、特に前記基体と前記接続体との間に接続体を前記基体に接合する少なくとも1つのガラスとを設けるステップと、
前記ガラスを、該ガラスが付着することにより前記基体及び前記接続体から複合物を形成することができる粘度を該ガラスが有し、及び/又は該粘度に該ガラスが達するまで、加熱するステップと、
前記ガラス20を冷却するステップであって、それにより、前記基体及び前記少なくとも1つの接続体が材料結合を形成する、冷却するステップと、
を含む。
基体であって、少なくとも1つの光電子機能素子用の実装領域を少なくとも部分的に画定する上面を有し、それにより、少なくとも1つの光電子機能素子用のヒートシンクを形成し、下面及び側面をさらに有する基体と、
特に材料結合によって前記基体に結合される、少なくとも1つの光電子機能素子用の少なくとも1つの接続体と、
を具備し、
前記基体は、少なくとも1つのチャネルを有し、該チャネル内に、前記少なくとも1つの接続体、少なくともその一部が配置され、該チャネルは、前記基体を前記接続体に接合するために少なくとも部分的にガラスによって充填されている、ハウジングである。
少なくとも1つのチャネルを備える少なくとも1つの基体であって、少なくとも1つの光電子機能素子用の実装領域を少なくとも部分的に画定する上面を有し、それにより少なくとも1つの光電子機能素子用のヒートシンクを形成する、少なくとも1つの基体を準備するステップと、
前記少なくとも1つのチャネル内に、少なくとも1つの光電子機能素子用の少なくとも1つの接続体と、前記少なくとも1つの接続体を前記基体に接合する少なくとも1つのガラスとを設けるステップと、
前記少なくとも1つのチャネル内の前記ガラスを、該ガラスが付着することにより前記基体及び前記接続体から複合構造体を形成することができる粘度を該ガラスが有し、及び/又は該粘度に該ガラスが達するまで、加熱するステップと、
前記ガラスを冷却するステップであって、それにより、前記基体及び前記少なくとも1つの接続体が材料結合を形成し、前記少なくとも1つの接続体は、前記ガラスに、少なくともその一部が埋め込まれる、冷却するステップと、
を含む方法がある。
10a 基体の上面
10b 基体の下面
13 基体の側面又は周面
14 機能素子の実装領域
15 絶縁体又は絶縁層
16 スリーブ又はシース
20 ガラス層又は接続及び絶縁のためのガラス
23 絶縁体又は更なるガラス層
30 接続体
40 電子機能素子、又はLED又はFET
50 接続方法、又はワイヤ又はボンディングワイヤ
60 端部要素、又は光学部品又はレンズ
61 端部要素のホルダ
70 頭部
71 頭部の開口
100 ハウジング
10’ 基体又はチャネルを内部に形成され接続体を内部に実装されたハウジング
10a’ 基体の上面
10b’ 基体の下面
10c’ 基体の側面
10d’ 基体中心軸
11’ 基体内の又は基体におけるチャネル
11−1’ チャネルの第1の部分又は脚
11−2’ チャネルの第2の部分又は脚
12’ 基体内の側方チャネル若しくはチャネル部、又は基体内の側方凹部
13’ 基体内の非側方チャネル若しくはチャネル部、又は基体内の非側方凹部
14’ 機能素子の実装領域
15’ 基体内の凹部又は反射体
16’ 端部要素用の収容領域
17’ 絶縁体又は絶縁層
20’ ガラス又は接続及び絶縁のためのガラス層
30’ 接続体又はコンタクトピン
30a’ 接続体の第1の端面
30b’ 接続体の第2の端面
30c’ 接続体の側面
30−1’ 接続体の第1の部分
30−2’ 接続体の第2の部分
35’ 絶縁又はガラス層
36’ スリーブ又はシース
40’ 光電子機能素子又はLED
50’ ボンディングワイヤ又はワイヤ
60’ 端部要素、レンズ、又はガラスレンズ
61’ 端部要素のホルダ
Claims (19)
- 電気部品、及び/又は電子部品、及び/又は光電子部品のハウジング(100)であって、
ガラス(20)で封入、または、ガラス(20)と接合されてなる金属製の構成物品を少なくとも1つ備え、
前記ガラス(20)が、アルカリチタンケイ酸塩ガラスである、ハウジング。 - 前記金属は、線形熱膨張係数αが13×10 −6 K −1 から25×10 −6 K −1 である、請求項1に記載のハウジング。
- 前記構成物品は、前記ガラス(20)との接触面において、銅、及び/又は、銅合金、及び/又は、アルミニウム、及び/又は、オーステナイト系鋼、及び/又は、オーステナイト系ステンレス鋼を含むものである、請求項1または2に記載のハウジング。
- 少なくとも1つの前記構成物品は、接続体であり、
該接続体が、前記ガラス(20)によって少なくともその一部が分離され、及び/又は、基体から、少なくともその一部が間隔を空けて配置されている、請求項1〜8のいずれか一項に記載のハウジング。 - 前記ガラス(20)が、前記基体から前記接続体を電気的に絶縁している、請求項9に記載のハウジング。
- 前記接続体が、コンタクトピンである、請求項9または10に記載のハウジング。
- 前記ガラス(20)は、軟化温度が前記基体及び/又は前記接続体に用いられる材料の融点よりも低い範囲である、請求項9〜11のいずれか一項に記載のハウジング。
- 前記ガラス(20)は、厚さが30μmから2000μmの範囲である、請求項1〜12のいずれか一項に記載のハウジング。
- 上面、下面及び側面を有する基体と、
該基体に電気的に絶縁されながら接合されてなる、少なくとも1つの接続体と、を少なくとも備えるハウジングであって、
前記基体は、少なくとも1つのチャネルを有し、該チャネル内の少なくとも一部に前記少なくとも1つの接続体が配置され、該チャネルは該基体を前記接続体に接合するために少なくとも一部がガラス(20)によって充填され、
前記基体が、銅、アルミニウム、オーステナイト系鋼及びオーステナイト系ステンレス鋼からなる群より選ばれる、少なくとも1つの金属若しくは合金を含む又は金属若しくは合金からなり、
前記接続体が、銅、アルミニウム、オーステナイト系鋼及びオーステナイト系ステンレス鋼からなる群より選ばれる、少なくとも1つの金属若しくは合金を含む又は金属若しくは合金からなり、
前記ガラス(20)が、アルカリチタンケイ酸塩ガラスである、ハウジング。 - 前記少なくとも1つのチャネルが、前記基体の前記上面及び前記下面の直接的な接続を提供する、請求項14に記載のハウジング。
- 前記少なくとも1つのチャネルが、前記基体の前記上面から前記下面に向かって延伸し、穴として形成されている、請求項14に記載のハウジング。
- 前記接続体が、コンタクトピンの形状で提供されている、請求項14に記載のハウジング。
- 前記コンタクトピンが、少なくともその一部において、実質的にストレートピン、フック形状、またはL字である、請求項17に記載のハウジング。
- 前記チャネル中の前記ガラスの層(20)が、1GΩ以上の電気抵抗を示す、請求項14〜18のいずれか一項に記載のハウジング。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE201110013276 DE102011013276A1 (de) | 2011-03-07 | 2011-03-07 | Glassystem zum hermetischen Verbund von Cu Bauteilen |
DE102011013278.3A DE102011013278B4 (de) | 2011-03-07 | 2011-03-07 | Gehäuse für Hochleistungsleuchtdioden - "1-Lagen-System" |
DE102011013278.3 | 2011-03-07 | ||
DE102011013276.7 | 2011-03-07 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013557002A Division JP5992933B2 (ja) | 2011-03-07 | 2012-03-05 | Cu部品を気密接続するガラスシステム及び電子部品用のハウジング |
Publications (2)
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EP (2) | EP2683667B1 (ja) |
JP (2) | JP5992933B2 (ja) |
KR (1) | KR101534760B1 (ja) |
CN (2) | CN106449934B (ja) |
WO (1) | WO2012119750A1 (ja) |
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DE102013006463B4 (de) | 2013-04-15 | 2017-01-19 | Schott Ag | Durchführung |
CN103833217B (zh) * | 2014-01-21 | 2015-12-02 | 江苏奥蓝工程玻璃有限公司 | 一种透光耐热的玻璃材料及其制备方法 |
FR3036396B1 (fr) | 2015-05-22 | 2020-02-28 | Axon Cable | Composition de verre pour le scellement de connecteur micro-d |
JP6666357B2 (ja) * | 2015-10-29 | 2020-03-13 | 京セラ株式会社 | 発光素子搭載用基板および発光装置 |
RU2738636C1 (ru) * | 2020-03-23 | 2020-12-15 | Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" (Госкорпорация "Росатом") | Способ изготовления герметичных металлостеклянных электросоединителей |
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JP3390617B2 (ja) * | 1996-11-29 | 2003-03-24 | 京セラ株式会社 | 半導体素子収納用パッケージ |
US6391809B1 (en) | 1999-12-30 | 2002-05-21 | Corning Incorporated | Copper alumino-silicate glasses |
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2012
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- 2012-03-05 KR KR1020137022659A patent/KR101534760B1/ko active IP Right Grant
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- 2012-03-05 CN CN201610560227.0A patent/CN106449934B/zh not_active Expired - Fee Related
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WO2012119750A1 (de) | 2012-09-13 |
JP2016119492A (ja) | 2016-06-30 |
EP3053887A1 (de) | 2016-08-10 |
CN103415479B (zh) | 2016-08-31 |
JP2014514731A (ja) | 2014-06-19 |
KR20140017566A (ko) | 2014-02-11 |
CN106449934B (zh) | 2020-03-27 |
US9807897B2 (en) | 2017-10-31 |
US20140153165A1 (en) | 2014-06-05 |
EP3053887B1 (de) | 2021-04-28 |
EP2683667A1 (de) | 2014-01-15 |
CN103415479A (zh) | 2013-11-27 |
KR101534760B1 (ko) | 2015-07-09 |
CN106449934A (zh) | 2017-02-22 |
EP2683667B1 (de) | 2016-06-29 |
JP5992933B2 (ja) | 2016-09-14 |
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