JP6199583B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6199583B2
JP6199583B2 JP2013052035A JP2013052035A JP6199583B2 JP 6199583 B2 JP6199583 B2 JP 6199583B2 JP 2013052035 A JP2013052035 A JP 2013052035A JP 2013052035 A JP2013052035 A JP 2013052035A JP 6199583 B2 JP6199583 B2 JP 6199583B2
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JP
Japan
Prior art keywords
film
oxide semiconductor
region
semiconductor film
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2013052035A
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English (en)
Japanese (ja)
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JP2013243343A (ja
JP2013243343A5 (enExample
Inventor
山崎　舜平
舜平 山崎
大介 松林
大介 松林
佳右 村山
佳右 村山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2013052035A priority Critical patent/JP6199583B2/ja
Priority to US13/865,435 priority patent/US9236490B2/en
Priority to KR1020130043200A priority patent/KR102053762B1/ko
Priority to TW102113970A priority patent/TWI594429B/zh
Publication of JP2013243343A publication Critical patent/JP2013243343A/ja
Publication of JP2013243343A5 publication Critical patent/JP2013243343A5/ja
Application granted granted Critical
Publication of JP6199583B2 publication Critical patent/JP6199583B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile

Landscapes

  • Thin Film Transistor (AREA)
JP2013052035A 2012-04-27 2013-03-14 半導体装置 Expired - Fee Related JP6199583B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2013052035A JP6199583B2 (ja) 2012-04-27 2013-03-14 半導体装置
US13/865,435 US9236490B2 (en) 2012-04-27 2013-04-18 Transistor including oxide semiconductor film having regions of different thickness
KR1020130043200A KR102053762B1 (ko) 2012-04-27 2013-04-18 반도체 장치
TW102113970A TWI594429B (zh) 2012-04-27 2013-04-19 半導體裝置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012103551 2012-04-27
JP2012103551 2012-04-27
JP2013052035A JP6199583B2 (ja) 2012-04-27 2013-03-14 半導体装置

Publications (3)

Publication Number Publication Date
JP2013243343A JP2013243343A (ja) 2013-12-05
JP2013243343A5 JP2013243343A5 (enExample) 2016-04-28
JP6199583B2 true JP6199583B2 (ja) 2017-09-20

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013052035A Expired - Fee Related JP6199583B2 (ja) 2012-04-27 2013-03-14 半導体装置

Country Status (4)

Country Link
US (1) US9236490B2 (enExample)
JP (1) JP6199583B2 (enExample)
KR (1) KR102053762B1 (enExample)
TW (1) TWI594429B (enExample)

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WO2017158967A1 (ja) * 2016-03-18 2017-09-21 三菱電機株式会社 薄膜トランジスタ、薄膜トランジスタ基板、液晶表示装置および薄膜トランジスタの製造方法
KR102867884B1 (ko) 2016-12-19 2025-10-02 삼성디스플레이 주식회사 트랜지스터 표시판 및 그 제조 방법
WO2019139577A1 (en) * 2018-01-10 2019-07-18 Intel Corporation Thin-film transistors with low contact resistance
JP2020107622A (ja) * 2018-12-26 2020-07-09 株式会社ジャパンディスプレイ 表示装置及び半導体装置
CN113284915A (zh) * 2021-05-24 2021-08-20 信利半导体有限公司 一种双栅π型薄膜晶体管光学感应器的制作方法及光学感应器及电子设备
CN113388823A (zh) * 2021-06-11 2021-09-14 苏州尚勤光电科技有限公司 一种氧化镓mocvd装置

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KR102053762B1 (ko) 2019-12-09
KR20130121723A (ko) 2013-11-06
US9236490B2 (en) 2016-01-12
JP2013243343A (ja) 2013-12-05
TWI594429B (zh) 2017-08-01
US20130285047A1 (en) 2013-10-31

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