JP6196589B2 - 半導体装置の製造方法および半導体製造装置 - Google Patents

半導体装置の製造方法および半導体製造装置 Download PDF

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Publication number
JP6196589B2
JP6196589B2 JP2014152285A JP2014152285A JP6196589B2 JP 6196589 B2 JP6196589 B2 JP 6196589B2 JP 2014152285 A JP2014152285 A JP 2014152285A JP 2014152285 A JP2014152285 A JP 2014152285A JP 6196589 B2 JP6196589 B2 JP 6196589B2
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Japan
Prior art keywords
film
polished
polishing
semiconductor substrate
ion
Prior art date
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JP2014152285A
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English (en)
Japanese (ja)
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JP2016031947A (ja
JP2016031947A5 (enExample
Inventor
松井　之輝
之輝 松井
須黒　恭一
恭一 須黒
聡文 側瀬
聡文 側瀬
川崎　貴彦
貴彦 川崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kioxia Corp
Original Assignee
Toshiba Memory Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Memory Corp filed Critical Toshiba Memory Corp
Priority to JP2014152285A priority Critical patent/JP6196589B2/ja
Priority to US14/643,218 priority patent/US10008390B2/en
Publication of JP2016031947A publication Critical patent/JP2016031947A/ja
Publication of JP2016031947A5 publication Critical patent/JP2016031947A5/ja
Application granted granted Critical
Publication of JP6196589B2 publication Critical patent/JP6196589B2/ja
Priority to US15/992,223 priority patent/US20180277388A1/en
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    • H10P30/40—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H10P32/30—
    • H10P52/00—
    • H10P52/402—
    • H10P52/403—
    • H10P95/04—
    • H10P95/062—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0118—Processes for the planarization of structures
    • B81C2201/0123—Selective removal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0118—Processes for the planarization of structures
    • B81C2201/0125—Blanket removal, e.g. polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31706—Ion implantation characterised by the area treated
    • H01J2237/3171—Ion implantation characterised by the area treated patterned
    • H01J2237/31711—Ion implantation characterised by the area treated patterned using mask

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2014152285A 2014-07-25 2014-07-25 半導体装置の製造方法および半導体製造装置 Active JP6196589B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2014152285A JP6196589B2 (ja) 2014-07-25 2014-07-25 半導体装置の製造方法および半導体製造装置
US14/643,218 US10008390B2 (en) 2014-07-25 2015-03-10 Manufacturing method of semiconductor device and semiconductor manufacturing apparatus
US15/992,223 US20180277388A1 (en) 2014-07-25 2018-05-30 Manufacturing method of semiconductor device and semiconductor manufacturing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014152285A JP6196589B2 (ja) 2014-07-25 2014-07-25 半導体装置の製造方法および半導体製造装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2017155935A Division JP2017228785A (ja) 2017-08-10 2017-08-10 半導体装置の製造方法および半導体製造装置

Publications (3)

Publication Number Publication Date
JP2016031947A JP2016031947A (ja) 2016-03-07
JP2016031947A5 JP2016031947A5 (enExample) 2016-04-14
JP6196589B2 true JP6196589B2 (ja) 2017-09-13

Family

ID=55167297

Family Applications (1)

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JP2014152285A Active JP6196589B2 (ja) 2014-07-25 2014-07-25 半導体装置の製造方法および半導体製造装置

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Country Link
US (2) US10008390B2 (enExample)
JP (1) JP6196589B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10777424B2 (en) 2018-02-27 2020-09-15 Kabushiki Kaisha Toshiba Method for manufacturing semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20250112050A1 (en) * 2023-09-28 2025-04-03 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing apparatus having beam for surface treatment and polishing method using the same

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2626502B2 (ja) * 1993-09-14 1997-07-02 日本電気株式会社 半導体装置及びその製造方法
JP3514908B2 (ja) * 1995-11-13 2004-04-05 株式会社東芝 研磨剤
JPH09162144A (ja) 1995-12-05 1997-06-20 Toshiba Corp 半導体装置の製造方法
JP3147089B2 (ja) 1998-06-23 2001-03-19 日本電気株式会社 半導体装置の製造方法
JP2001044201A (ja) 1999-07-29 2001-02-16 Hitachi Ltd 半導体集積回路装置の製造方法
DE10056872C1 (de) * 2000-11-16 2002-06-13 Advanced Micro Devices Inc Implantationsüberwachung unter Anwendung mehrerer Implantations- und Temperschritte
US6713385B1 (en) * 2002-10-31 2004-03-30 Intel Corporation Implanting ions in shallow trench isolation structures
JP2004207385A (ja) * 2002-12-24 2004-07-22 Rohm Co Ltd マスク、その製造方法およびこれを用いた半導体装置の製造方法
JP2007002268A (ja) 2005-06-21 2007-01-11 Plasma Ion Assist Co Ltd 研磨用部材の表面処理方法及びその物品
JP2008016692A (ja) * 2006-07-07 2008-01-24 Fujifilm Corp 半導体装置の製造方法
US8153513B2 (en) * 2006-07-25 2012-04-10 Silicon Genesis Corporation Method and system for continuous large-area scanning implantation process
US7767583B2 (en) * 2008-03-04 2010-08-03 Varian Semiconductor Equipment Associates, Inc. Method to improve uniformity of chemical mechanical polishing planarization
JP2011138826A (ja) * 2009-12-25 2011-07-14 Nitta Haas Inc 半導体デバイス用基板およびｓｏｉ基板

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10777424B2 (en) 2018-02-27 2020-09-15 Kabushiki Kaisha Toshiba Method for manufacturing semiconductor device

Also Published As

Publication number Publication date
US10008390B2 (en) 2018-06-26
US20180277388A1 (en) 2018-09-27
JP2016031947A (ja) 2016-03-07
US20160027660A1 (en) 2016-01-28

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