JP2016031947A5 - - Google Patents
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- Publication number
- JP2016031947A5 JP2016031947A5 JP2014152285A JP2014152285A JP2016031947A5 JP 2016031947 A5 JP2016031947 A5 JP 2016031947A5 JP 2014152285 A JP2014152285 A JP 2014152285A JP 2014152285 A JP2014152285 A JP 2014152285A JP 2016031947 A5 JP2016031947 A5 JP 2016031947A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- polished
- ions
- manufacturing
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000002500 ions Chemical class 0.000 claims description 7
- 238000005498 polishing Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 3
- 238000010884 ion-beam technique Methods 0.000 claims 3
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000012986 modification Methods 0.000 claims 1
- 230000004048 modification Effects 0.000 claims 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014152285A JP6196589B2 (ja) | 2014-07-25 | 2014-07-25 | 半導体装置の製造方法および半導体製造装置 |
| US14/643,218 US10008390B2 (en) | 2014-07-25 | 2015-03-10 | Manufacturing method of semiconductor device and semiconductor manufacturing apparatus |
| US15/992,223 US20180277388A1 (en) | 2014-07-25 | 2018-05-30 | Manufacturing method of semiconductor device and semiconductor manufacturing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014152285A JP6196589B2 (ja) | 2014-07-25 | 2014-07-25 | 半導体装置の製造方法および半導体製造装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017155935A Division JP2017228785A (ja) | 2017-08-10 | 2017-08-10 | 半導体装置の製造方法および半導体製造装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016031947A JP2016031947A (ja) | 2016-03-07 |
| JP2016031947A5 true JP2016031947A5 (enExample) | 2016-04-14 |
| JP6196589B2 JP6196589B2 (ja) | 2017-09-13 |
Family
ID=55167297
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014152285A Active JP6196589B2 (ja) | 2014-07-25 | 2014-07-25 | 半導体装置の製造方法および半導体製造装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (2) | US10008390B2 (enExample) |
| JP (1) | JP6196589B2 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10777424B2 (en) | 2018-02-27 | 2020-09-15 | Kabushiki Kaisha Toshiba | Method for manufacturing semiconductor device |
| US20250112050A1 (en) * | 2023-09-28 | 2025-04-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Polishing apparatus having beam for surface treatment and polishing method using the same |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2626502B2 (ja) * | 1993-09-14 | 1997-07-02 | 日本電気株式会社 | 半導体装置及びその製造方法 |
| JP3514908B2 (ja) * | 1995-11-13 | 2004-04-05 | 株式会社東芝 | 研磨剤 |
| JPH09162144A (ja) | 1995-12-05 | 1997-06-20 | Toshiba Corp | 半導体装置の製造方法 |
| JP3147089B2 (ja) | 1998-06-23 | 2001-03-19 | 日本電気株式会社 | 半導体装置の製造方法 |
| JP2001044201A (ja) | 1999-07-29 | 2001-02-16 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| DE10056872C1 (de) * | 2000-11-16 | 2002-06-13 | Advanced Micro Devices Inc | Implantationsüberwachung unter Anwendung mehrerer Implantations- und Temperschritte |
| US6713385B1 (en) * | 2002-10-31 | 2004-03-30 | Intel Corporation | Implanting ions in shallow trench isolation structures |
| JP2004207385A (ja) * | 2002-12-24 | 2004-07-22 | Rohm Co Ltd | マスク、その製造方法およびこれを用いた半導体装置の製造方法 |
| JP2007002268A (ja) | 2005-06-21 | 2007-01-11 | Plasma Ion Assist Co Ltd | 研磨用部材の表面処理方法及びその物品 |
| JP2008016692A (ja) * | 2006-07-07 | 2008-01-24 | Fujifilm Corp | 半導体装置の製造方法 |
| US8153513B2 (en) * | 2006-07-25 | 2012-04-10 | Silicon Genesis Corporation | Method and system for continuous large-area scanning implantation process |
| US7767583B2 (en) * | 2008-03-04 | 2010-08-03 | Varian Semiconductor Equipment Associates, Inc. | Method to improve uniformity of chemical mechanical polishing planarization |
| JP2011138826A (ja) * | 2009-12-25 | 2011-07-14 | Nitta Haas Inc | 半導体デバイス用基板およびsoi基板 |
-
2014
- 2014-07-25 JP JP2014152285A patent/JP6196589B2/ja active Active
-
2015
- 2015-03-10 US US14/643,218 patent/US10008390B2/en active Active
-
2018
- 2018-05-30 US US15/992,223 patent/US20180277388A1/en not_active Abandoned
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