JP6194034B2 - 蒸着装置及び蒸着方法 - Google Patents
蒸着装置及び蒸着方法 Download PDFInfo
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- JP6194034B2 JP6194034B2 JP2016025526A JP2016025526A JP6194034B2 JP 6194034 B2 JP6194034 B2 JP 6194034B2 JP 2016025526 A JP2016025526 A JP 2016025526A JP 2016025526 A JP2016025526 A JP 2016025526A JP 6194034 B2 JP6194034 B2 JP 6194034B2
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- 238000000151 deposition Methods 0.000 claims description 24
- 238000002347 injection Methods 0.000 claims description 23
- 239000007924 injection Substances 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 20
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- 239000000126 substance Substances 0.000 claims description 6
- 229910017052 cobalt Inorganic materials 0.000 claims description 5
- 239000010941 cobalt Substances 0.000 claims description 5
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- 239000000376 reactant Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims 1
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- 229910052751 metal Inorganic materials 0.000 description 80
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- 239000010408 film Substances 0.000 description 33
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- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000010926 purge Methods 0.000 description 5
- 230000032258 transport Effects 0.000 description 5
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- 230000008016 vaporization Effects 0.000 description 3
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
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- 239000010453 quartz Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
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- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electrodes Of Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2015-0178600 | 2015-12-14 | ||
KR1020150178600A KR101765244B1 (ko) | 2015-12-14 | 2015-12-14 | 증착 장치 및 증착 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017110286A JP2017110286A (ja) | 2017-06-22 |
JP6194034B2 true JP6194034B2 (ja) | 2017-09-06 |
Family
ID=59081249
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016025526A Active JP6194034B2 (ja) | 2015-12-14 | 2016-02-15 | 蒸着装置及び蒸着方法 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP6194034B2 (zh) |
KR (1) | KR101765244B1 (zh) |
TW (2) | TWI604085B (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101925579B1 (ko) | 2017-06-23 | 2018-12-05 | 참엔지니어링(주) | 증착 장치 |
KR102100801B1 (ko) * | 2018-04-12 | 2020-04-14 | 참엔지니어링(주) | 증착 장치 및 방법 |
KR102310047B1 (ko) | 2019-06-07 | 2021-10-08 | 참엔지니어링(주) | 증착 장치 |
KR102314016B1 (ko) * | 2019-10-14 | 2021-10-19 | 주식회사 서연이화 | 레이더 전파 투과형 커버의 제조방법 |
KR102170451B1 (ko) | 2020-01-22 | 2020-10-28 | (주)이큐테크플러스 | 프리커서와 반응가스를 함께 분사하는 라디컬 유닛 및 이를 포함하는 ald장치 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6154041A (ja) * | 1984-08-25 | 1986-03-18 | Hitachi Maxell Ltd | 磁気記録媒体の製造方法 |
JPS6350474A (ja) * | 1986-08-21 | 1988-03-03 | Hitachi Ltd | 磁性薄膜の形成方法 |
JP3082716B2 (ja) * | 1997-08-08 | 2000-08-28 | 日本電気株式会社 | レーザcvd装置及び方法 |
US7169703B2 (en) * | 2002-03-19 | 2007-01-30 | Kabushiki Kaisha Ekisho Sentan Gijutsu Kaihatsu Center | Method of forming metallic wiring layer, method of selective metallization, apparatus for selective metallization and substrate apparatus |
JP2005171272A (ja) * | 2003-12-08 | 2005-06-30 | Sony Corp | レーザcvd装置 |
JP5114960B2 (ja) | 2006-10-03 | 2013-01-09 | ソニー株式会社 | 加工装置、及び配線基板の製造装置 |
JP5476519B2 (ja) * | 2010-01-20 | 2014-04-23 | 株式会社ブイ・テクノロジー | レーザ加工装置 |
JP5994090B2 (ja) * | 2012-02-29 | 2016-09-21 | 株式会社ブイ・テクノロジー | レーザ加工装置 |
JP2014019937A (ja) * | 2012-07-23 | 2014-02-03 | Omron Corp | レーザ加工装置 |
-
2015
- 2015-12-14 KR KR1020150178600A patent/KR101765244B1/ko active IP Right Grant
-
2016
- 2016-02-15 JP JP2016025526A patent/JP6194034B2/ja active Active
- 2016-02-18 TW TW105104679A patent/TWI604085B/zh active
- 2016-02-18 TW TW106120964A patent/TWI634232B/zh active
Also Published As
Publication number | Publication date |
---|---|
TW201720949A (zh) | 2017-06-16 |
KR20170070947A (ko) | 2017-06-23 |
TWI604085B (zh) | 2017-11-01 |
JP2017110286A (ja) | 2017-06-22 |
TWI634232B (zh) | 2018-09-01 |
TW201732076A (zh) | 2017-09-16 |
KR101765244B1 (ko) | 2017-08-07 |
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