KR101765244B1 - 증착 장치 및 증착 방법 - Google Patents

증착 장치 및 증착 방법 Download PDF

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Publication number
KR101765244B1
KR101765244B1 KR1020150178600A KR20150178600A KR101765244B1 KR 101765244 B1 KR101765244 B1 KR 101765244B1 KR 1020150178600 A KR1020150178600 A KR 1020150178600A KR 20150178600 A KR20150178600 A KR 20150178600A KR 101765244 B1 KR101765244 B1 KR 101765244B1
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KR
South Korea
Prior art keywords
temperature
source
supply line
gas
processing space
Prior art date
Application number
KR1020150178600A
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English (en)
Korean (ko)
Other versions
KR20170070947A (ko
Inventor
이진우
박종수
허병순
하도균
Original Assignee
참엔지니어링(주)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 참엔지니어링(주) filed Critical 참엔지니어링(주)
Priority to KR1020150178600A priority Critical patent/KR101765244B1/ko
Priority to JP2016025526A priority patent/JP6194034B2/ja
Priority to TW105104679A priority patent/TWI604085B/zh
Priority to TW106120964A priority patent/TWI634232B/zh
Priority to CN201610959641.9A priority patent/CN107012446B/zh
Publication of KR20170070947A publication Critical patent/KR20170070947A/ko
Application granted granted Critical
Publication of KR101765244B1 publication Critical patent/KR101765244B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using coherent light, UV to IR, e.g. lasers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020150178600A 2015-11-11 2015-12-14 증착 장치 및 증착 방법 KR101765244B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020150178600A KR101765244B1 (ko) 2015-12-14 2015-12-14 증착 장치 및 증착 방법
JP2016025526A JP6194034B2 (ja) 2015-12-14 2016-02-15 蒸着装置及び蒸着方法
TW105104679A TWI604085B (zh) 2015-12-14 2016-02-18 沈積裝置
TW106120964A TWI634232B (zh) 2015-12-14 2016-02-18 沈積方法
CN201610959641.9A CN107012446B (zh) 2015-11-11 2016-10-27 沉积装置及沉积方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020150178600A KR101765244B1 (ko) 2015-12-14 2015-12-14 증착 장치 및 증착 방법

Publications (2)

Publication Number Publication Date
KR20170070947A KR20170070947A (ko) 2017-06-23
KR101765244B1 true KR101765244B1 (ko) 2017-08-07

Family

ID=59081249

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150178600A KR101765244B1 (ko) 2015-11-11 2015-12-14 증착 장치 및 증착 방법

Country Status (3)

Country Link
JP (1) JP6194034B2 (zh)
KR (1) KR101765244B1 (zh)
TW (2) TWI634232B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11661656B2 (en) 2020-01-22 2023-05-30 Eq Tech Plus Co., Ltd. Thin film forming apparatus and radical unit for forming thin film

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101925579B1 (ko) 2017-06-23 2018-12-05 참엔지니어링(주) 증착 장치
KR102100801B1 (ko) * 2018-04-12 2020-04-14 참엔지니어링(주) 증착 장치 및 방법
KR102310047B1 (ko) 2019-06-07 2021-10-08 참엔지니어링(주) 증착 장치
KR102314016B1 (ko) * 2019-10-14 2021-10-19 주식회사 서연이화 레이더 전파 투과형 커버의 제조방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005171272A (ja) * 2003-12-08 2005-06-30 Sony Corp レーザｃｖｄ装置
JP2008112958A (ja) 2006-10-03 2008-05-15 Sony Corp 加工装置、及び配線基板の製造装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6154041A (ja) * 1984-08-25 1986-03-18 Hitachi Maxell Ltd 磁気記録媒体の製造方法
JPS6350474A (ja) * 1986-08-21 1988-03-03 Hitachi Ltd 磁性薄膜の形成方法
JP3082716B2 (ja) * 1997-08-08 2000-08-28 日本電気株式会社 レーザｃｖｄ装置及び方法
CN100343417C (zh) * 2002-03-19 2007-10-17 株式会社液晶先端技术开发中心 布线金属层的形成方法、选择性形成金属的方法、选择性形成金属的装置及基板装置
JP5476519B2 (ja) * 2010-01-20 2014-04-23 株式会社ブイ・テクノロジー レーザ加工装置
JP5994090B2 (ja) * 2012-02-29 2016-09-21 株式会社ブイ・テクノロジー レーザ加工装置
JP2014019937A (ja) * 2012-07-23 2014-02-03 Omron Corp レーザ加工装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005171272A (ja) * 2003-12-08 2005-06-30 Sony Corp レーザｃｖｄ装置
JP2008112958A (ja) 2006-10-03 2008-05-15 Sony Corp 加工装置、及び配線基板の製造装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11661656B2 (en) 2020-01-22 2023-05-30 Eq Tech Plus Co., Ltd. Thin film forming apparatus and radical unit for forming thin film

Also Published As

Publication number Publication date
JP6194034B2 (ja) 2017-09-06
TWI634232B (zh) 2018-09-01
KR20170070947A (ko) 2017-06-23
JP2017110286A (ja) 2017-06-22
TW201720949A (zh) 2017-06-16
TW201732076A (zh) 2017-09-16
TWI604085B (zh) 2017-11-01

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