KR101765244B1 - 증착 장치 및 증착 방법 - Google Patents

증착 장치 및 증착 방법 Download PDF

Info

Publication number
KR101765244B1
KR101765244B1 KR1020150178600A KR20150178600A KR101765244B1 KR 101765244 B1 KR101765244 B1 KR 101765244B1 KR 1020150178600 A KR1020150178600 A KR 1020150178600A KR 20150178600 A KR20150178600 A KR 20150178600A KR 101765244 B1 KR101765244 B1 KR 101765244B1
Authority
KR
South Korea
Prior art keywords
temperature
source
supply line
gas
processing space
Prior art date
Application number
KR1020150178600A
Other languages
English (en)
Korean (ko)
Other versions
KR20170070947A (ko
Inventor
이진우
박종수
허병순
하도균
Original Assignee
참엔지니어링(주)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 참엔지니어링(주) filed Critical 참엔지니어링(주)
Priority to KR1020150178600A priority Critical patent/KR101765244B1/ko
Priority to JP2016025526A priority patent/JP6194034B2/ja
Priority to TW105104679A priority patent/TWI604085B/zh
Priority to TW106120964A priority patent/TWI634232B/zh
Priority to CN201610959641.9A priority patent/CN107012446B/zh
Publication of KR20170070947A publication Critical patent/KR20170070947A/ko
Application granted granted Critical
Publication of KR101765244B1 publication Critical patent/KR101765244B1/ko

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/483Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using coherent light, UV to IR, e.g. lasers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020150178600A 2015-11-11 2015-12-14 증착 장치 및 증착 방법 KR101765244B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020150178600A KR101765244B1 (ko) 2015-12-14 2015-12-14 증착 장치 및 증착 방법
JP2016025526A JP6194034B2 (ja) 2015-12-14 2016-02-15 蒸着装置及び蒸着方法
TW105104679A TWI604085B (zh) 2015-12-14 2016-02-18 沈積裝置
TW106120964A TWI634232B (zh) 2015-12-14 2016-02-18 沈積方法
CN201610959641.9A CN107012446B (zh) 2015-11-11 2016-10-27 沉积装置及沉积方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020150178600A KR101765244B1 (ko) 2015-12-14 2015-12-14 증착 장치 및 증착 방법

Publications (2)

Publication Number Publication Date
KR20170070947A KR20170070947A (ko) 2017-06-23
KR101765244B1 true KR101765244B1 (ko) 2017-08-07

Family

ID=59081249

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150178600A KR101765244B1 (ko) 2015-11-11 2015-12-14 증착 장치 및 증착 방법

Country Status (3)

Country Link
JP (1) JP6194034B2 (zh)
KR (1) KR101765244B1 (zh)
TW (2) TWI634232B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11661656B2 (en) 2020-01-22 2023-05-30 Eq Tech Plus Co., Ltd. Thin film forming apparatus and radical unit for forming thin film

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101925579B1 (ko) 2017-06-23 2018-12-05 참엔지니어링(주) 증착 장치
KR102100801B1 (ko) * 2018-04-12 2020-04-14 참엔지니어링(주) 증착 장치 및 방법
KR102310047B1 (ko) 2019-06-07 2021-10-08 참엔지니어링(주) 증착 장치
KR102314016B1 (ko) * 2019-10-14 2021-10-19 주식회사 서연이화 레이더 전파 투과형 커버의 제조방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005171272A (ja) * 2003-12-08 2005-06-30 Sony Corp レーザcvd装置
JP2008112958A (ja) 2006-10-03 2008-05-15 Sony Corp 加工装置、及び配線基板の製造装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6154041A (ja) * 1984-08-25 1986-03-18 Hitachi Maxell Ltd 磁気記録媒体の製造方法
JPS6350474A (ja) * 1986-08-21 1988-03-03 Hitachi Ltd 磁性薄膜の形成方法
JP3082716B2 (ja) * 1997-08-08 2000-08-28 日本電気株式会社 レーザcvd装置及び方法
CN100343417C (zh) * 2002-03-19 2007-10-17 株式会社液晶先端技术开发中心 布线金属层的形成方法、选择性形成金属的方法、选择性形成金属的装置及基板装置
JP5476519B2 (ja) * 2010-01-20 2014-04-23 株式会社ブイ・テクノロジー レーザ加工装置
JP5994090B2 (ja) * 2012-02-29 2016-09-21 株式会社ブイ・テクノロジー レーザ加工装置
JP2014019937A (ja) * 2012-07-23 2014-02-03 Omron Corp レーザ加工装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005171272A (ja) * 2003-12-08 2005-06-30 Sony Corp レーザcvd装置
JP2008112958A (ja) 2006-10-03 2008-05-15 Sony Corp 加工装置、及び配線基板の製造装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11661656B2 (en) 2020-01-22 2023-05-30 Eq Tech Plus Co., Ltd. Thin film forming apparatus and radical unit for forming thin film

Also Published As

Publication number Publication date
JP6194034B2 (ja) 2017-09-06
TWI634232B (zh) 2018-09-01
KR20170070947A (ko) 2017-06-23
JP2017110286A (ja) 2017-06-22
TW201720949A (zh) 2017-06-16
TW201732076A (zh) 2017-09-16
TWI604085B (zh) 2017-11-01

Similar Documents

Publication Publication Date Title
KR101765244B1 (ko) 증착 장치 및 증착 방법
TWI703688B (zh) 基板加熱裝置及基板加熱方法
TWI646214B (zh) 在化學氣相沉積反應器中的基座的設計
KR101680291B1 (ko) 증착 장치 및 증착 방법
US6753506B2 (en) System and method of fast ambient switching for rapid thermal processing
JP5650935B2 (ja) 基板処理装置及び位置決め方法並びにフォーカスリング配置方法
JP2016510946A (ja) 噴射器から基板までの間隙の制御のための装置および方法
US20090207390A1 (en) Adhesion promoting process, adhesion promoting device, coating and developing system and storage medium
TW201604302A (zh) 蒸發源陣列
TW201602373A (zh) 用於有機材料之蒸發源及蒸發源陣列
TWI742357B (zh) 沉積裝置及方法
CN103290391A (zh) 激光加工装置
KR102499328B1 (ko) 기화기
KR101723923B1 (ko) 증착 장치
KR101925579B1 (ko) 증착 장치
KR101820098B1 (ko) 증착 장치 및 증착 방법
US20130284097A1 (en) Gas distribution module for insertion in lateral flow chambers
JP2014019937A (ja) レーザ加工装置
KR102374079B1 (ko) 기판 처리장치에 구비되는 기판안착부
JP6318363B2 (ja) プラズマ処理装置及び方法、電子デバイスの製造方法
US20160237569A1 (en) Semiconductor manufacturing apparatus
TW201705370A (zh) 用於加工基板的裝置
JP7407614B2 (ja) 基板加熱装置および基板処理システム
CN108695189B (zh) 晶圆加工装置及加工半导体晶圆的方法
JP2017216378A (ja) 加熱装置及び方法、電子デバイスの製造方法

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
AMND Amendment
E601 Decision to refuse application
AMND Amendment
X701 Decision to grant (after re-examination)