JP6185062B2 - テーパ付けされた酸化物の堆積／エッチング - Google Patents

テーパ付けされた酸化物の堆積／エッチング Download PDF

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JP6185062B2
JP6185062B2 JP2015524304A JP2015524304A JP6185062B2 JP 6185062 B2 JP6185062 B2 JP 6185062B2 JP 2015524304 A JP2015524304 A JP 2015524304A JP 2015524304 A JP2015524304 A JP 2015524304A JP 6185062 B2 JP6185062 B2 JP 6185062B2
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Japan
Prior art keywords
insulating layer
etching
field plate
layer
thickness
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Expired - Fee Related
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JP2015524304A
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English (en)
Japanese (ja)
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JP2015529017A (ja
JP2015529017A5 (enExample
Inventor
ヴィジェイ パーササラサイ
ヴィジェイ パーササラサイ
スジット バネルジー
スジット バネルジー
ウェイン ビー グラボウスキ
ウェイン ビー グラボウスキ
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パワー・インテグレーションズ・インコーポレーテッド
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Priority claimed from US13/558,218 external-priority patent/US8765609B2/en
Priority claimed from US13/572,492 external-priority patent/US20140045318A1/en
Application filed by パワー・インテグレーションズ・インコーポレーテッド filed Critical パワー・インテグレーションズ・インコーポレーテッド
Publication of JP2015529017A publication Critical patent/JP2015529017A/ja
Publication of JP2015529017A5 publication Critical patent/JP2015529017A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 

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  • Element Separation (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2015524304A 2012-07-25 2013-07-11 テーパ付けされた酸化物の堆積／エッチング Expired - Fee Related JP6185062B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US13/558,218 2012-07-25
US13/558,218 US8765609B2 (en) 2012-07-25 2012-07-25 Deposit/etch for tapered oxide
US13/572,492 2012-08-10
US13/572,492 US20140045318A1 (en) 2012-08-10 2012-08-10 Forming a tapered oxide from a thick oxide layer
PCT/US2013/050046 WO2014018273A1 (en) 2012-07-25 2013-07-11 Method of forming a tapered oxide

Publications (3)

Publication Number Publication Date
JP2015529017A JP2015529017A (ja) 2015-10-01
JP2015529017A5 JP2015529017A5 (enExample) 2016-08-25
JP6185062B2 true JP6185062B2 (ja) 2017-08-23

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JP2015524304A Expired - Fee Related JP6185062B2 (ja) 2012-07-25 2013-07-11 テーパ付けされた酸化物の堆積／エッチング

Country Status (4)

Country Link
JP (1) JP6185062B2 (enExample)
KR (1) KR101955321B1 (enExample)
CN (1) CN104488084B (enExample)
WO (1) WO2014018273A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014102029A1 (de) 2014-02-18 2015-08-20 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von Halbleiterbauelementen und Halbleiterbauelement
JP6203697B2 (ja) * 2014-09-30 2017-09-27 株式会社東芝 半導体装置およびその製造方法
US10079151B2 (en) * 2015-09-24 2018-09-18 Tokyo Electron Limited Method for bottom-up deposition of a film in a recessed feature
JP6709425B2 (ja) * 2016-05-31 2020-06-17 北九州市 半導体装置
CN105931969A (zh) * 2016-05-31 2016-09-07 上海华虹宏力半导体制造有限公司 终端结构的制造方法
JP6767302B2 (ja) * 2017-04-14 2020-10-14 東京エレクトロン株式会社 成膜方法
DE102018107417B4 (de) * 2018-03-28 2024-02-08 Infineon Technologies Austria Ag Nadelzellengraben-MOSFET und Verfahren zur Herstellung desselben
JP7337767B2 (ja) 2020-09-18 2023-09-04 株式会社東芝 半導体装置及びその製造方法
JP7492438B2 (ja) * 2020-11-02 2024-05-29 株式会社東芝 半導体装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6191447B1 (en) * 1999-05-28 2001-02-20 Micro-Ohm Corporation Power semiconductor devices that utilize tapered trench-based insulating regions to improve electric field profiles in highly doped drift region mesas and methods of forming same
JP4073176B2 (ja) * 2001-04-02 2008-04-09 新電元工業株式会社 半導体装置およびその製造方法
DE102005043916B3 (de) * 2005-09-14 2006-12-21 Infineon Technologies Austria Ag Leistungshalbleiterbauelement mit einer Feldelektrode und Verfahren zu dessen Herstellung
US7964912B2 (en) 2008-09-18 2011-06-21 Power Integrations, Inc. High-voltage vertical transistor with a varied width silicon pillar
US20100264486A1 (en) * 2009-04-20 2010-10-21 Texas Instruments Incorporated Field plate trench mosfet transistor with graded dielectric liner thickness
KR101094373B1 (ko) * 2009-07-03 2011-12-15 주식회사 하이닉스반도체 랜딩플러그 전치 구조를 이용한 매립게이트 제조 방법
JP5323610B2 (ja) 2009-08-18 2013-10-23 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置とその製造方法

Also Published As

Publication number Publication date
KR101955321B1 (ko) 2019-03-07
KR20150036196A (ko) 2015-04-07
CN104488084A (zh) 2015-04-01
WO2014018273A1 (en) 2014-01-30
CN104488084B (zh) 2017-08-04
JP2015529017A (ja) 2015-10-01

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