CN104488084B - 形成锥形氧化物的方法 - Google Patents

形成锥形氧化物的方法 Download PDF

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Publication number
CN104488084B
CN104488084B CN201380039425.7A CN201380039425A CN104488084B CN 104488084 B CN104488084 B CN 104488084B CN 201380039425 A CN201380039425 A CN 201380039425A CN 104488084 B CN104488084 B CN 104488084B
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CN
China
Prior art keywords
insulating barrier
layer
etching
insulating layer
field plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201380039425.7A
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English (en)
Chinese (zh)
Other versions
CN104488084A (zh
Inventor
V·帕塔萨拉蒂
S·班纳吉
W·B·格拉博斯基
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Power Integrations Inc
Original Assignee
Power Integrations Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/558,218 external-priority patent/US8765609B2/en
Priority claimed from US13/572,492 external-priority patent/US20140045318A1/en
Application filed by Power Integrations Inc filed Critical Power Integrations Inc
Publication of CN104488084A publication Critical patent/CN104488084A/zh
Application granted granted Critical
Publication of CN104488084B publication Critical patent/CN104488084B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 

Landscapes

  • Element Separation (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN201380039425.7A 2012-07-25 2013-07-11 形成锥形氧化物的方法 Expired - Fee Related CN104488084B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US13/558,218 US8765609B2 (en) 2012-07-25 2012-07-25 Deposit/etch for tapered oxide
US13/558,218 2012-07-25
US13/572,492 2012-08-10
US13/572,492 US20140045318A1 (en) 2012-08-10 2012-08-10 Forming a tapered oxide from a thick oxide layer
PCT/US2013/050046 WO2014018273A1 (en) 2012-07-25 2013-07-11 Method of forming a tapered oxide

Publications (2)

Publication Number Publication Date
CN104488084A CN104488084A (zh) 2015-04-01
CN104488084B true CN104488084B (zh) 2017-08-04

Family

ID=48877540

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380039425.7A Expired - Fee Related CN104488084B (zh) 2012-07-25 2013-07-11 形成锥形氧化物的方法

Country Status (4)

Country Link
JP (1) JP6185062B2 (enExample)
KR (1) KR101955321B1 (enExample)
CN (1) CN104488084B (enExample)
WO (1) WO2014018273A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014102029A1 (de) 2014-02-18 2015-08-20 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von Halbleiterbauelementen und Halbleiterbauelement
JP6203697B2 (ja) * 2014-09-30 2017-09-27 株式会社東芝 半導体装置およびその製造方法
US10079151B2 (en) * 2015-09-24 2018-09-18 Tokyo Electron Limited Method for bottom-up deposition of a film in a recessed feature
JP6709425B2 (ja) * 2016-05-31 2020-06-17 北九州市 半導体装置
CN105931969A (zh) * 2016-05-31 2016-09-07 上海华虹宏力半导体制造有限公司 终端结构的制造方法
JP6767302B2 (ja) * 2017-04-14 2020-10-14 東京エレクトロン株式会社 成膜方法
DE102018107417B4 (de) * 2018-03-28 2024-02-08 Infineon Technologies Austria Ag Nadelzellengraben-MOSFET und Verfahren zur Herstellung desselben
JP7337767B2 (ja) 2020-09-18 2023-09-04 株式会社東芝 半導体装置及びその製造方法
JP7492438B2 (ja) * 2020-11-02 2024-05-29 株式会社東芝 半導体装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070069257A1 (en) * 2005-09-14 2007-03-29 Infineon Technologies Austria Ag Power semiconductor component having a field electrode and method for producing this component
US20100264486A1 (en) * 2009-04-20 2010-10-21 Texas Instruments Incorporated Field plate trench mosfet transistor with graded dielectric liner thickness
CN101944507A (zh) * 2009-07-03 2011-01-12 海力士半导体有限公司 使用预着陆塞制造掩埋栅极的方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6191447B1 (en) * 1999-05-28 2001-02-20 Micro-Ohm Corporation Power semiconductor devices that utilize tapered trench-based insulating regions to improve electric field profiles in highly doped drift region mesas and methods of forming same
JP4073176B2 (ja) * 2001-04-02 2008-04-09 新電元工業株式会社 半導体装置およびその製造方法
US7964912B2 (en) 2008-09-18 2011-06-21 Power Integrations, Inc. High-voltage vertical transistor with a varied width silicon pillar
JP5323610B2 (ja) 2009-08-18 2013-10-23 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置とその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070069257A1 (en) * 2005-09-14 2007-03-29 Infineon Technologies Austria Ag Power semiconductor component having a field electrode and method for producing this component
US20100264486A1 (en) * 2009-04-20 2010-10-21 Texas Instruments Incorporated Field plate trench mosfet transistor with graded dielectric liner thickness
CN101944507A (zh) * 2009-07-03 2011-01-12 海力士半导体有限公司 使用预着陆塞制造掩埋栅极的方法

Also Published As

Publication number Publication date
JP2015529017A (ja) 2015-10-01
KR20150036196A (ko) 2015-04-07
WO2014018273A1 (en) 2014-01-30
KR101955321B1 (ko) 2019-03-07
CN104488084A (zh) 2015-04-01
JP6185062B2 (ja) 2017-08-23

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Granted publication date: 20170804

Termination date: 20200711