JP6180882B2 - 固体撮像装置、信号処理装置、および電子機器 - Google Patents

固体撮像装置、信号処理装置、および電子機器 Download PDF

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Publication number
JP6180882B2
JP6180882B2 JP2013226299A JP2013226299A JP6180882B2 JP 6180882 B2 JP6180882 B2 JP 6180882B2 JP 2013226299 A JP2013226299 A JP 2013226299A JP 2013226299 A JP2013226299 A JP 2013226299A JP 6180882 B2 JP6180882 B2 JP 6180882B2
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pixel
pixels
unit
solid
state imaging
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JP2015088947A (ja
JP2015088947A5 (enExample
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敦彦 山本
敦彦 山本
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Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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Priority to JP2013226299A priority Critical patent/JP6180882B2/ja
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Priority to CN201910870831.7A priority patent/CN110581964B/zh
Priority to CN201910870756.4A priority patent/CN110620124B/zh
Priority to CN201910870491.8A priority patent/CN110545389B/zh
Priority to CN201410572947.XA priority patent/CN104600085B/zh
Priority to US14/523,621 priority patent/US10462430B2/en
Publication of JP2015088947A publication Critical patent/JP2015088947A/ja
Publication of JP2015088947A5 publication Critical patent/JP2015088947A5/ja
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Priority to US16/586,026 priority patent/US10992890B2/en
Priority to US17/219,541 priority patent/US20210218916A1/en
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
    • H04N25/672—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction between adjacent sensors or output registers for reading a single image
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/68—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to defects
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/704—Pixels specially adapted for focusing, e.g. phase difference pixel sets
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Color Television Image Signal Generators (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Optical Filters (AREA)
JP2013226299A 2013-10-31 2013-10-31 固体撮像装置、信号処理装置、および電子機器 Expired - Fee Related JP6180882B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2013226299A JP6180882B2 (ja) 2013-10-31 2013-10-31 固体撮像装置、信号処理装置、および電子機器
CN201910870756.4A CN110620124B (zh) 2013-10-31 2014-10-23 摄像器件、信号处理器件和电子装置
CN201910870491.8A CN110545389B (zh) 2013-10-31 2014-10-23 摄像器件
CN201410572947.XA CN104600085B (zh) 2013-10-31 2014-10-23 固态摄像器件、信号处理器件和电子装置
CN201910870831.7A CN110581964B (zh) 2013-10-31 2014-10-23 摄像器件和电子装置
US14/523,621 US10462430B2 (en) 2013-10-31 2014-10-24 Imaging device, signal processing device, and electronic apparatus having pixel sharing units that include portions of a color filter arrangement
US16/586,026 US10992890B2 (en) 2013-10-31 2019-09-27 Solid state imaging device, signal processing device, and electronic apparatus having pixel sharing units and color filter coding units
US17/219,541 US20210218916A1 (en) 2013-10-31 2021-03-31 Solid state imaging device, signal processing device, and electronic apparatus having pixel sharing units and color filter coding units

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013226299A JP6180882B2 (ja) 2013-10-31 2013-10-31 固体撮像装置、信号処理装置、および電子機器

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JP2015088947A5 JP2015088947A5 (enExample) 2016-03-10
JP6180882B2 true JP6180882B2 (ja) 2017-08-16

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CN (4) CN110620124B (enExample)

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Also Published As

Publication number Publication date
CN110581964A (zh) 2019-12-17
CN110620124B (zh) 2023-07-18
CN104600085A (zh) 2015-05-06
CN110545389A (zh) 2019-12-06
CN104600085B (zh) 2019-09-13
CN110620124A (zh) 2019-12-27
US20200029056A1 (en) 2020-01-23
JP2015088947A (ja) 2015-05-07
US10992890B2 (en) 2021-04-27
CN110545389B (zh) 2022-03-18
CN110581964B (zh) 2022-03-18
US10462430B2 (en) 2019-10-29
US20210218916A1 (en) 2021-07-15
US20150116566A1 (en) 2015-04-30

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