JP6177320B2 - マイクロセンサパッケージ及びマイクロセンサパッケージをアセンブリングする関連方法 - Google Patents

マイクロセンサパッケージ及びマイクロセンサパッケージをアセンブリングする関連方法 Download PDF

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JP6177320B2
JP6177320B2 JP2015517247A JP2015517247A JP6177320B2 JP 6177320 B2 JP6177320 B2 JP 6177320B2 JP 2015517247 A JP2015517247 A JP 2015517247A JP 2015517247 A JP2015517247 A JP 2015517247A JP 6177320 B2 JP6177320 B2 JP 6177320B2
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Japan
Prior art keywords
substrate
microsensor
printed circuit
adhesive
circuit board
Prior art date
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JP2015517247A
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English (en)
Japanese (ja)
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JP2015527568A (ja
JP2015527568A5 (enExample
Inventor
ジェームズ アール アンダーブリンク，
ジェームズ アール アンダーブリンク，
マーク シェプラク，
マーク シェプラク，
ディラン ピー． アレクサンダー，
ディラン ピー． アレクサンダー，
ティファニー エヌ レーガン，
ティファニー エヌ レーガン，
ジェシカ シー． メロイ，
ジェシカ シー． メロイ，
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Boeing Co
University of Florida Research Foundation Inc
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Boeing Co
University of Florida Research Foundation Inc
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Publication of JP2015527568A publication Critical patent/JP2015527568A/ja
Publication of JP2015527568A5 publication Critical patent/JP2015527568A5/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0006—Interconnects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/09—Packages
    • B81B2207/091—Arrangements for connecting external electrical signals to mechanical structures inside the package
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/09—Packages
    • B81B2207/091—Arrangements for connecting external electrical signals to mechanical structures inside the package
    • B81B2207/094—Feed-through, via
    • B81B2207/096—Feed-through, via through the substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Micromachines (AREA)
  • Pressure Sensors (AREA)
  • Piezo-Electric Transducers For Audible Bands (AREA)
  • Measurement Of Mechanical Vibrations Or Ultrasonic Waves (AREA)
  • Measuring Fluid Pressure (AREA)
JP2015517247A 2012-06-15 2013-03-18 マイクロセンサパッケージ及びマイクロセンサパッケージをアセンブリングする関連方法 Active JP6177320B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/524,141 US9278849B2 (en) 2012-06-15 2012-06-15 Micro-sensor package and associated method of assembling the same
US13/524,141 2012-06-15
PCT/US2013/032811 WO2013187987A1 (en) 2012-06-15 2013-03-18 Micro-sensor package and associated method of assembling the same

Publications (3)

Publication Number Publication Date
JP2015527568A JP2015527568A (ja) 2015-09-17
JP2015527568A5 JP2015527568A5 (enExample) 2017-05-18
JP6177320B2 true JP6177320B2 (ja) 2017-08-09

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JP2015517247A Active JP6177320B2 (ja) 2012-06-15 2013-03-18 マイクロセンサパッケージ及びマイクロセンサパッケージをアセンブリングする関連方法

Country Status (7)

Country Link
US (1) US9278849B2 (enExample)
EP (1) EP2861523B1 (enExample)
JP (1) JP6177320B2 (enExample)
KR (1) KR102029522B1 (enExample)
CN (1) CN104334492B (enExample)
CA (1) CA2870476C (enExample)
WO (1) WO2013187987A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9146164B2 (en) * 2013-03-07 2015-09-29 Sensata Technologies, Inc. Pressure transducer substrate with self alignment feature
US10859448B2 (en) 2015-02-12 2020-12-08 University Of Florida Research Foundation, Incorporated MEMS capacitive shear sensor system having an interface circuit
JP6344266B2 (ja) * 2015-03-03 2018-06-20 株式会社デンソー 半導体装置およびその製造方法
KR101966491B1 (ko) 2016-03-16 2019-04-05 현대자동차주식회사 전해질 고갈을 방지할 수 있는 리튬 공기 전지
WO2017176506A1 (en) * 2016-04-05 2017-10-12 University Of Florida Research Foundation, Incorporated Flush-mount micromachined transducers
CN107290099B (zh) 2016-04-11 2021-06-08 森萨塔科技公司 压力传感器、用于压力传感器的插塞件和制造插塞件的方法
EP3236226B1 (en) 2016-04-20 2019-07-24 Sensata Technologies, Inc. Method of manufacturing a pressure sensor
US10545064B2 (en) 2017-05-04 2020-01-28 Sensata Technologies, Inc. Integrated pressure and temperature sensor
US10323998B2 (en) 2017-06-30 2019-06-18 Sensata Technologies, Inc. Fluid pressure sensor
US10724907B2 (en) 2017-07-12 2020-07-28 Sensata Technologies, Inc. Pressure sensor element with glass barrier material configured for increased capacitive response
US10557770B2 (en) 2017-09-14 2020-02-11 Sensata Technologies, Inc. Pressure sensor with improved strain gauge
CN111133768A (zh) * 2017-09-21 2020-05-08 美商楼氏电子有限公司 具有进入保护的麦克风中的提升mems器件
CN108190828B (zh) * 2018-02-07 2024-08-13 北京先通康桥医药科技有限公司 Mems传感器线阵、触诊探头及其制造方法
EP3680211B1 (en) * 2019-01-10 2024-03-06 TE Connectivity Solutions GmbH Sensor unit and method of interconnecting a substrate and a carrier
CN110610953B (zh) * 2019-09-30 2020-06-02 大连环宇安迪科技有限公司 一种相机感测组件及其制造方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1545484A (zh) * 2001-08-24 2004-11-10 Ф�ء�����˹��˾ 制造微机电构件的方法
US7534722B2 (en) * 2005-06-14 2009-05-19 John Trezza Back-to-front via process
KR100705007B1 (ko) * 2005-11-30 2007-04-09 매그나칩 반도체 유한회사 마이크로 센서 및 그 제조방법
KR100995301B1 (ko) * 2005-12-26 2010-11-19 쿄세라 코포레이션 마이크로 전자 기계 장치 및 그 제조방법
JP5011820B2 (ja) * 2006-05-24 2012-08-29 オムロン株式会社 積層デバイス、およびその製造方法
JP2008085508A (ja) * 2006-09-26 2008-04-10 Matsushita Electric Works Ltd 音響センサの製造方法
DE102008025599B4 (de) 2007-05-14 2013-02-21 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Gehäuste aktive Mikrostrukturen mit Direktkontaktierung zu einem Substrat
JP5137059B2 (ja) * 2007-06-20 2013-02-06 新光電気工業株式会社 電子部品用パッケージ及びその製造方法と電子部品装置
JP4481323B2 (ja) * 2007-07-20 2010-06-16 日立オートモティブシステムズ株式会社 物理量センサ及びその製造方法
TWI464835B (zh) * 2008-04-04 2014-12-11 藤倉股份有限公司 半導體封裝體及其製造方法
US7929376B2 (en) 2008-04-25 2011-04-19 The Boeing Company Method and apparatus for identifying noise sources
US7812418B2 (en) 2008-07-29 2010-10-12 Fortemedia, Inc Chip-scaled MEMS microphone package
DE102008042258A1 (de) 2008-09-22 2010-04-01 Robert Bosch Gmbh Verfahren zur Herstellung eines mikromechanischen Chips sowie ein Bauelement mit einem derartigen Chip
US8280694B2 (en) 2008-11-03 2012-10-02 The Boeing Company Constant current power source electronics for a sensor
JP5325630B2 (ja) * 2009-03-27 2013-10-23 株式会社東芝 マイクロホン装置並びにその調整装置及び調整方法
JP5018852B2 (ja) * 2009-09-29 2012-09-05 セイコーエプソン株式会社 圧電デバイスの製造方法
US8580594B2 (en) * 2011-08-09 2013-11-12 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating a semiconductor device having recessed bonding site

Also Published As

Publication number Publication date
CA2870476C (en) 2016-11-29
CN104334492B (zh) 2016-08-24
WO2013187987A1 (en) 2013-12-19
JP2015527568A (ja) 2015-09-17
CA2870476A1 (en) 2013-12-19
US20130336511A1 (en) 2013-12-19
CN104334492A (zh) 2015-02-04
EP2861523B1 (en) 2016-08-24
KR102029522B1 (ko) 2019-10-07
KR20150031223A (ko) 2015-03-23
EP2861523A1 (en) 2015-04-22
US9278849B2 (en) 2016-03-08

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