JP6175662B2 - 蛍光x線分析装置 - Google Patents
蛍光x線分析装置 Download PDFInfo
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- JP6175662B2 JP6175662B2 JP2017520570A JP2017520570A JP6175662B2 JP 6175662 B2 JP6175662 B2 JP 6175662B2 JP 2017520570 A JP2017520570 A JP 2017520570A JP 2017520570 A JP2017520570 A JP 2017520570A JP 6175662 B2 JP6175662 B2 JP 6175662B2
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- 238000004876 x-ray fluorescence Methods 0.000 title description 4
- 238000005259 measurement Methods 0.000 claims description 186
- 239000000203 mixture Substances 0.000 claims description 66
- 239000010409 thin film Substances 0.000 claims description 57
- 238000004458 analytical method Methods 0.000 claims description 54
- 238000011156 evaluation Methods 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 24
- 239000010410 layer Substances 0.000 claims description 21
- 230000035945 sensitivity Effects 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- 239000002356 single layer Substances 0.000 claims description 8
- 238000011002 quantification Methods 0.000 claims description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 11
- 238000002441 X-ray diffraction Methods 0.000 description 10
- 229910000831 Steel Inorganic materials 0.000 description 6
- KFZAUHNPPZCSCR-UHFFFAOYSA-N iron zinc Chemical compound [Fe].[Zn] KFZAUHNPPZCSCR-UHFFFAOYSA-N 0.000 description 6
- 238000007747 plating Methods 0.000 description 6
- 239000010959 steel Substances 0.000 description 6
- 229910052742 iron Inorganic materials 0.000 description 5
- 238000001514 detection method Methods 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 229910001297 Zn alloy Inorganic materials 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- -1 are analyzed Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/223—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
- G01N23/207—Diffractometry using detectors, e.g. using a probe in a central position and one or more displaceable detectors in circumferential positions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/07—Investigating materials by wave or particle radiation secondary emission
- G01N2223/076—X-ray fluorescence
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/07—Investigating materials by wave or particle radiation secondary emission
- G01N2223/076—X-ray fluorescence
- G01N2223/0766—X-ray fluorescence with indicator, tags
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- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Description
3 試料
4 2次X線(測定線)
16 表示器
22,32 表示制御手段
23,33 測定線評価手段
Claims (2)
- 単層もしくは多層の薄膜を基板上にまたは独立して形成した試料に1次X線を照射し、発生する2次X線の測定強度に基づいてファンダメンタルパラメーター法により前記薄膜の組成および/または厚さの定量値を求める蛍光X線分析装置であって、
強度を測定すべき2次X線である測定線による分析について、定量誤差の推定および/または分析の可否の判断を行う測定線評価手段と、
その測定線評価手段によって得られた定量誤差および/または分析の可否を表示器に表示させる表示制御手段とを備え、
前記測定線評価手段が、
前記薄膜について指定された組成および/または厚さに基づいて、指定された測定線のすべてについて理論強度計算および装置感度により推定測定強度を算出し、
その推定測定強度の組のうち1つの測定線の推定測定強度のみを所定量変化させた推定測定強度の組に基づいて、ファンダメンタルパラメーター法により推定測定強度変化後の前記薄膜の組成および/または厚さの定量値を求める手順を、推定測定強度を変化させる測定線を変えて繰返し、
求めた定量値と前記指定された組成および/または厚さとに基づいて、前記定量誤差の推定および/または分析の可否の判断を行う蛍光X線分析装置。 - 単層もしくは多層の薄膜を基板上にまたは独立して形成した試料に1次X線を照射し、発生する2次X線の測定強度に基づいてファンダメンタルパラメーター法により前記薄膜の組成および/または厚さの定量値を求める蛍光X線分析装置であって、
強度を測定すべき2次X線である測定線による分析について、定量誤差の推定および/または分析の可否の判断ならびに最適な測定線の組み合わせの選択を行う測定線評価手段と、
その測定線評価手段によって得られた定量誤差および/または分析の可否ならびに最適な測定線の組み合わせを表示器に表示させる表示制御手段とを備え、
前記測定線評価手段が、
前記薄膜について指定された組成および/または厚さに基づいて、強度を測定できる測定線のすべてについて理論強度計算および装置感度により推定測定強度を算出し、
前記強度を測定できる測定線のすべてから、前記薄膜の組成および/または厚さの定量値を求めるための測定線の組み合わせを作成し、
その測定線の組み合わせごとに、その組み合わせに含まれる測定線の前記推定測定強度の組のうち1つの測定線の推定測定強度のみを所定量変化させた推定測定強度の組に基づいて、ファンダメンタルパラメーター法により推定測定強度変化後の前記薄膜の組成および/または厚さの定量値を求める手順を、推定測定強度を変化させる測定線を変えて繰返し、
求めた定量値と前記指定された組成および/または厚さとに基づいて、前記定量誤差の推定および/または分析の可否の判断ならびに最適な測定線の組み合わせの選択を行う蛍光X線分析装置。
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JP2015157958 | 2015-08-10 | ||
JP2015157958 | 2015-08-10 | ||
PCT/JP2016/069689 WO2017026200A1 (ja) | 2015-08-10 | 2016-07-01 | 蛍光x線分析装置 |
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JP6175662B2 true JP6175662B2 (ja) | 2017-08-09 |
JPWO2017026200A1 JPWO2017026200A1 (ja) | 2017-08-31 |
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US (1) | US10012605B2 (ja) |
EP (1) | EP3336527B1 (ja) |
JP (1) | JP6175662B2 (ja) |
CN (2) | CN112378938A (ja) |
WO (1) | WO2017026200A1 (ja) |
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JP6732347B1 (ja) * | 2019-03-29 | 2020-07-29 | 株式会社リガク | 蛍光x線分析装置 |
CN110530912B (zh) * | 2019-09-12 | 2022-01-04 | 岛津企业管理(中国)有限公司 | 一种含镀层贵金属成分的x射线荧光光谱分析方法 |
JP6838754B1 (ja) * | 2019-09-26 | 2021-03-03 | 株式会社リガク | 蛍光x線分析装置 |
JP7190751B2 (ja) * | 2020-10-30 | 2022-12-16 | 株式会社リガク | 蛍光x線分析装置 |
JP7249666B2 (ja) | 2020-10-30 | 2023-03-31 | 株式会社リガク | 蛍光x線分析装置 |
JP7178725B2 (ja) * | 2020-11-30 | 2022-11-28 | 株式会社リガク | 蛍光x線分析装置 |
Citations (3)
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JP2001050917A (ja) * | 1999-08-06 | 2001-02-23 | Rigaku Industrial Co | 蛍光x線分析装置 |
JP2001356103A (ja) * | 2000-04-11 | 2001-12-26 | Rigaku Industrial Co | 蛍光x線分析装置 |
US20030118148A1 (en) * | 2001-12-06 | 2003-06-26 | Rigaku Industrial Corporation | X-ray fluorescense spectrometer |
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JP2853261B2 (ja) * | 1989-05-16 | 1999-02-03 | 三菱マテリアル株式会社 | 金属分析方法および分析装置 |
JP3965191B2 (ja) | 2005-04-06 | 2007-08-29 | 理学電機工業株式会社 | 蛍光x線分析装置およびそれに用いるプログラム |
JP4247559B2 (ja) * | 2005-06-07 | 2009-04-02 | 株式会社リガク | 蛍光x線分析装置およびそれに用いるプログラム |
CN101887038A (zh) * | 2009-05-15 | 2010-11-17 | 上海优特化工有限公司 | 一种使用x射线荧光光谱仪测量镀层的装置及方法 |
CN103604818B (zh) * | 2013-11-21 | 2016-11-09 | 同济大学 | 一种荧光exafs数据的自吸收效应修正处理方法 |
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- 2016-07-01 JP JP2017520570A patent/JP6175662B2/ja active Active
- 2016-07-01 WO PCT/JP2016/069689 patent/WO2017026200A1/ja active Application Filing
- 2016-07-01 EP EP16834897.7A patent/EP3336527B1/en active Active
- 2016-07-01 US US15/522,944 patent/US10012605B2/en active Active
- 2016-07-01 CN CN201680003309.3A patent/CN107076687A/zh active Pending
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2001050917A (ja) * | 1999-08-06 | 2001-02-23 | Rigaku Industrial Co | 蛍光x線分析装置 |
JP2001356103A (ja) * | 2000-04-11 | 2001-12-26 | Rigaku Industrial Co | 蛍光x線分析装置 |
US20030118148A1 (en) * | 2001-12-06 | 2003-06-26 | Rigaku Industrial Corporation | X-ray fluorescense spectrometer |
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EP3336527B1 (en) | 2020-04-22 |
EP3336527A1 (en) | 2018-06-20 |
CN107076687A (zh) | 2017-08-18 |
EP3336527A4 (en) | 2019-04-17 |
WO2017026200A1 (ja) | 2017-02-16 |
US20170322165A1 (en) | 2017-11-09 |
CN112378938A (zh) | 2021-02-19 |
US10012605B2 (en) | 2018-07-03 |
JPWO2017026200A1 (ja) | 2017-08-31 |
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