JP6168273B2 - 基板処理装置および基板処理方法 - Google Patents

基板処理装置および基板処理方法 Download PDF

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Publication number
JP6168273B2
JP6168273B2 JP2012229139A JP2012229139A JP6168273B2 JP 6168273 B2 JP6168273 B2 JP 6168273B2 JP 2012229139 A JP2012229139 A JP 2012229139A JP 2012229139 A JP2012229139 A JP 2012229139A JP 6168273 B2 JP6168273 B2 JP 6168273B2
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Japan
Prior art keywords
substrate
heater
wafer
processing
processing apparatus
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Application number
JP2012229139A
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English (en)
Japanese (ja)
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JP2014082318A5 (enExample
JP2014082318A (ja
Inventor
橋詰　彰夫
彰夫 橋詰
喬 太田
喬 太田
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Screen Holdings Co Ltd
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Screen Holdings Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Screen Holdings Co Ltd filed Critical Screen Holdings Co Ltd
Priority to JP2012229139A priority Critical patent/JP6168273B2/ja
Priority to US14/435,558 priority patent/US20150258582A1/en
Priority to KR1020157012879A priority patent/KR102132051B1/ko
Priority to PCT/JP2013/073195 priority patent/WO2014061353A1/ja
Priority to TW102132773A priority patent/TWI508793B/zh
Publication of JP2014082318A publication Critical patent/JP2014082318A/ja
Publication of JP2014082318A5 publication Critical patent/JP2014082318A5/ja
Priority to US15/401,892 priority patent/US10497581B2/en
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Publication of JP6168273B2 publication Critical patent/JP6168273B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/02—Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface ; Controlling means therefor; Control of the thickness of a coating by spreading or distributing liquids or other fluent materials already applied to the coated surface
    • B05C11/08—Spreading liquid or other fluent material by manipulating the work, e.g. tilting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/10—Storage, supply or control of liquid or other fluent material; Recovery of excess liquid or other fluent material
    • B05C11/1002—Means for controlling supply, i.e. flow or pressure, of liquid or other fluent material to the applying apparatus, e.g. valves
    • B05C11/1015—Means for controlling supply, i.e. flow or pressure, of liquid or other fluent material to the applying apparatus, e.g. valves responsive to a conditions of ambient medium or target, e.g. humidity, temperature ; responsive to position or movement of the coating head relative to the target
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C9/00—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important
    • B05C9/08—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation
    • B05C9/14—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation the auxiliary operation involving heating or cooling
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2012229139A 2012-10-16 2012-10-16 基板処理装置および基板処理方法 Active JP6168273B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2012229139A JP6168273B2 (ja) 2012-10-16 2012-10-16 基板処理装置および基板処理方法
KR1020157012879A KR102132051B1 (ko) 2012-10-16 2013-08-29 기판 처리 장치
PCT/JP2013/073195 WO2014061353A1 (ja) 2012-10-16 2013-08-29 基板処理装置
US14/435,558 US20150258582A1 (en) 2012-10-16 2013-08-29 Substrate processing device
TW102132773A TWI508793B (zh) 2012-10-16 2013-09-11 Substrate processing device
US15/401,892 US10497581B2 (en) 2012-10-16 2017-01-09 Substrate processing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012229139A JP6168273B2 (ja) 2012-10-16 2012-10-16 基板処理装置および基板処理方法

Publications (3)

Publication Number Publication Date
JP2014082318A JP2014082318A (ja) 2014-05-08
JP2014082318A5 JP2014082318A5 (enExample) 2015-10-01
JP6168273B2 true JP6168273B2 (ja) 2017-07-26

Family

ID=50487930

Family Applications (1)

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JP2012229139A Active JP6168273B2 (ja) 2012-10-16 2012-10-16 基板処理装置および基板処理方法

Country Status (5)

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US (2) US20150258582A1 (enExample)
JP (1) JP6168273B2 (enExample)
KR (1) KR102132051B1 (enExample)
TW (1) TWI508793B (enExample)
WO (1) WO2014061353A1 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6271304B2 (ja) * 2013-03-29 2018-01-31 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
KR102229786B1 (ko) * 2014-05-26 2021-03-19 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR101919122B1 (ko) * 2014-08-12 2018-11-15 주식회사 제우스 공정 분리형 기판 처리장치 및 처리방법
KR102343226B1 (ko) * 2014-09-04 2021-12-23 삼성전자주식회사 스팟 히터 및 이를 이용한 웨이퍼 클리닝 장치
JP6742708B2 (ja) * 2015-09-29 2020-08-19 芝浦メカトロニクス株式会社 基板処理方法
JP6586697B2 (ja) * 2015-12-25 2019-10-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP6689719B2 (ja) * 2016-09-23 2020-04-28 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
KR102408105B1 (ko) * 2017-03-06 2022-06-14 에이씨엠 리서치 (상하이) 인코포레이티드 반도체 기판을 세정하기 위한 장치
JP6945314B2 (ja) 2017-03-24 2021-10-06 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP6967922B2 (ja) * 2017-09-22 2021-11-17 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
KR102030068B1 (ko) 2017-10-12 2019-10-08 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
JP7004579B2 (ja) * 2018-01-15 2022-01-21 東京エレクトロン株式会社 基板処理装置、基板処理方法および記憶媒体
JP7263078B2 (ja) * 2018-09-27 2023-04-24 東京エレクトロン株式会社 基板処理装置および基板処理方法
GB201901637D0 (en) * 2019-02-06 2019-03-27 Lam Res Ag Apparatus for processing a wafer, and method of controlling such an apparatus
KR102188261B1 (ko) * 2019-08-02 2020-12-09 세미기어, 인코포레이션 기판 냉각 장치 및 방법
KR102395805B1 (ko) * 2019-08-26 2022-05-11 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
JP6886546B2 (ja) * 2020-05-12 2021-06-16 芝浦メカトロニクス株式会社 基板処理装置
US20220390840A1 (en) * 2021-06-03 2022-12-08 Mks Instruments, Inc. Light-Enhanced Ozone Wafer Processing System and Method of Use
KR102577853B1 (ko) * 2021-06-22 2023-09-13 티오에스주식회사 기판 처리 장비용 고토크형 매뉴퓰레이터
KR20230102300A (ko) * 2021-12-30 2023-07-07 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
JP2023125797A (ja) * 2022-02-28 2023-09-07 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および処理カップ洗浄方法

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US20020096196A1 (en) * 2001-01-23 2002-07-25 Takayuki Toshima Substrate processing apparatus and substrate processing method
JP3837026B2 (ja) * 2001-01-23 2006-10-25 東京エレクトロン株式会社 基板洗浄装置及び基板洗浄方法
JP2005217226A (ja) * 2004-01-30 2005-08-11 Matsushita Electric Ind Co Ltd 半導体基板の洗浄方法及び洗浄装置
JP2005277268A (ja) * 2004-03-26 2005-10-06 Dainippon Screen Mfg Co Ltd 基板処理装置及び基板処理方法
TWI343840B (en) * 2005-07-06 2011-06-21 Applied Materials Inc Apparatus for electroless deposition of metals onto semiconductor substrates
US7914626B2 (en) * 2005-11-24 2011-03-29 Tokyo Electron Limited Liquid processing method and liquid processing apparatus
JP2007173432A (ja) * 2005-12-21 2007-07-05 Seiko Epson Corp 半導体基板処理装置及び半導体装置の製造方法
JP4787089B2 (ja) 2006-06-26 2011-10-05 大日本スクリーン製造株式会社 基板処理方法および基板処理装置
JP5474840B2 (ja) * 2011-01-25 2014-04-16 東京エレクトロン株式会社 液処理装置および液処理方法
US20130087309A1 (en) * 2011-10-11 2013-04-11 Applied Materials, Inc. Substrate support with temperature control
JP6317547B2 (ja) * 2012-08-28 2018-04-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法

Also Published As

Publication number Publication date
US20170117160A1 (en) 2017-04-27
TWI508793B (zh) 2015-11-21
KR102132051B1 (ko) 2020-07-08
US10497581B2 (en) 2019-12-03
US20150258582A1 (en) 2015-09-17
WO2014061353A1 (ja) 2014-04-24
JP2014082318A (ja) 2014-05-08
KR20150070354A (ko) 2015-06-24
TW201420212A (zh) 2014-06-01

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