JP6150887B2 - エキシマレーザアニーリングプロセスのための監視する方法および装置 - Google Patents

エキシマレーザアニーリングプロセスのための監視する方法および装置 Download PDF

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JP6150887B2
JP6150887B2 JP2015517763A JP2015517763A JP6150887B2 JP 6150887 B2 JP6150887 B2 JP 6150887B2 JP 2015517763 A JP2015517763 A JP 2015517763A JP 2015517763 A JP2015517763 A JP 2015517763A JP 6150887 B2 JP6150887 B2 JP 6150887B2
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light
semiconductor layer
layer
energy density
diffracted
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JP2015528201A (ja
JP2015528201A5 (enExample
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デア ヴィルト， パウル ファン
デア ヴィルト， パウル ファン
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コヒーレント レーザーシステムズ ゲーエムベーハー ウント コンパニー カーゲー
コヒーレント レーザーシステムズ ゲーエムベーハー ウント コンパニー カーゲー
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B23K26/355—Texturing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N21/4788—Diffraction
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/8422—Investigating thin films, e.g. matrix isolation method
    • H10P34/42—
    • H10P74/203—
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N2021/8461—Investigating impurities in semiconductor, e.g. Silicon
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N2021/8477—Investigating crystals, e.g. liquid crystals
    • H10P14/3411—
    • H10P14/3451—
    • H10P14/3816—

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Pathology (AREA)
  • Immunology (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Mathematical Physics (AREA)
  • Recrystallisation Techniques (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Toxicology (AREA)
JP2015517763A 2012-06-22 2013-06-20 エキシマレーザアニーリングプロセスのための監視する方法および装置 Active JP6150887B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261663435P 2012-06-22 2012-06-22
US61/663,435 2012-06-22
US13/907,637 2013-05-31
US13/907,637 US20130341310A1 (en) 2012-06-22 2013-05-31 Monitoring method and apparatus for excimer laser annealing process
PCT/EP2013/062883 WO2013190040A1 (en) 2012-06-22 2013-06-20 Monitoring method and apparatus for excimer laser annealing process

Publications (3)

Publication Number Publication Date
JP2015528201A JP2015528201A (ja) 2015-09-24
JP2015528201A5 JP2015528201A5 (enExample) 2016-06-02
JP6150887B2 true JP6150887B2 (ja) 2017-06-21

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JP2015517763A Active JP6150887B2 (ja) 2012-06-22 2013-06-20 エキシマレーザアニーリングプロセスのための監視する方法および装置

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Country Link
US (1) US20130341310A1 (enExample)
JP (1) JP6150887B2 (enExample)
KR (1) KR102111050B1 (enExample)
CN (1) CN104641460B (enExample)
TW (1) TWI563538B (enExample)
WO (1) WO2013190040A1 (enExample)

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CN103745947B (zh) * 2014-01-29 2016-03-23 上海华力微电子有限公司 用于激光退火机的监控方法
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KR102245780B1 (ko) * 2014-11-03 2021-04-29 삼성디스플레이 주식회사 레이저 결정화 시스템, 레이저 결정화방법 및 표시장치의 제조방법
CN106198568B (zh) * 2015-05-24 2019-03-12 上海微电子装备（集团）股份有限公司 一种具有透明基底的薄膜的测量装置及测量方法
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JP2019521321A (ja) * 2016-05-11 2019-07-25 アイピージー フォトニクス コーポレーション フラットパネルディスプレイのための、ファイバーレーザーアニーリングされた多結晶シリコンフィルムの形態学的特徴を測定するためのプロセス及びシステム
CN109791896B (zh) * 2016-10-04 2023-06-20 科磊股份有限公司 加快在半导体装置制作中的光谱测量
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CN107677686B (zh) * 2017-09-28 2021-01-26 京东方科技集团股份有限公司 光线透过窗集成装置及采用该装置的设备
CN108048913A (zh) * 2017-12-14 2018-05-18 友达光电（昆山）有限公司 一种非晶硅转变为多晶硅的结晶激光装置及方法
GB2571997B (en) * 2018-03-16 2021-10-27 X Fab Texas Inc Use of wafer brightness to monitor laser anneal process and laser anneal tool
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Also Published As

Publication number Publication date
JP2015528201A (ja) 2015-09-24
CN104641460B (zh) 2017-08-18
US20130341310A1 (en) 2013-12-26
KR102111050B1 (ko) 2020-05-14
TWI563538B (en) 2016-12-21
CN104641460A (zh) 2015-05-20
TW201405632A (zh) 2014-02-01
WO2013190040A1 (en) 2013-12-27
KR20150034186A (ko) 2015-04-02

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