KR102111050B1 - 엑시머 레이저 소결 공정을 위한 감시 방법 및 장치 - Google Patents

엑시머 레이저 소결 공정을 위한 감시 방법 및 장치 Download PDF

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KR102111050B1
KR102111050B1 KR1020157001511A KR20157001511A KR102111050B1 KR 102111050 B1 KR102111050 B1 KR 102111050B1 KR 1020157001511 A KR1020157001511 A KR 1020157001511A KR 20157001511 A KR20157001511 A KR 20157001511A KR 102111050 B1 KR102111050 B1 KR 102111050B1
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semiconductor layer
light
energy density
optical device
surface features
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KR20150034186A (ko
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데르 빌트 폴 반
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코히런트 레이저시스템즈 게엠바하 운트 컴파니 카게
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
    • H01L22/12—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B23K26/355—Texturing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N21/4788—Diffraction
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/8422—Investigating thin films, e.g. matrix isolation method
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • H01L21/268—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N2021/8461—Investigating impurities in semiconductor, e.g. Silicon
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N2021/8477—Investigating crystals, e.g. liquid crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3816—Pulsed laser beam

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Analytical Chemistry (AREA)
  • Pathology (AREA)
  • Immunology (AREA)
  • General Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Electromagnetism (AREA)
  • Mathematical Physics (AREA)
  • Recrystallisation Techniques (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
KR1020157001511A 2012-06-22 2013-06-20 엑시머 레이저 소결 공정을 위한 감시 방법 및 장치 Active KR102111050B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261663435P 2012-06-22 2012-06-22
US61/663,435 2012-06-22
US13/907,637 US20130341310A1 (en) 2012-06-22 2013-05-31 Monitoring method and apparatus for excimer laser annealing process
US13/907,637 2013-05-31
PCT/EP2013/062883 WO2013190040A1 (en) 2012-06-22 2013-06-20 Monitoring method and apparatus for excimer laser annealing process

Publications (2)

Publication Number Publication Date
KR20150034186A KR20150034186A (ko) 2015-04-02
KR102111050B1 true KR102111050B1 (ko) 2020-05-14

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Country Link
US (1) US20130341310A1 (enExample)
JP (1) JP6150887B2 (enExample)
KR (1) KR102111050B1 (enExample)
CN (1) CN104641460B (enExample)
TW (1) TWI563538B (enExample)
WO (1) WO2013190040A1 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013120936A (ja) 2011-12-07 2013-06-17 Ultratech Inc パターン効果を低減したＧａＮＬＥＤのレーザーアニール
JP5338890B2 (ja) * 2011-12-15 2013-11-13 Ｊｆｅスチール株式会社 レーザ溶接の溶接位置検出装置および溶接位置検出方法
CN103745947B (zh) * 2014-01-29 2016-03-23 上海华力微电子有限公司 用于激光退火机的监控方法
US9335276B2 (en) 2014-03-03 2016-05-10 Coherent Lasersystems Gmbh & Co. Kg Monitoring method and apparatus for control of excimer laser annealing
JP6378974B2 (ja) * 2014-08-20 2018-08-22 城戸　淳二 レーザアニール装置及びレーザアニール方法
KR102245780B1 (ko) * 2014-11-03 2021-04-29 삼성디스플레이 주식회사 레이저 결정화 시스템, 레이저 결정화방법 및 표시장치의 제조방법
CN106198568B (zh) * 2015-05-24 2019-03-12 上海微电子装备（集团）股份有限公司 一种具有透明基底的薄膜的测量装置及测量方法
KR101877274B1 (ko) * 2015-05-29 2018-07-12 에이피시스템 주식회사 자외선 광원을 이용한 레이저 결정화 설비에 기인하는 무라 정량화 시스템 및 자외선 광원을 이용한 레이저 결정화 설비에 기인하는 무라 정량화 방법
KR20190005862A (ko) * 2016-05-11 2019-01-16 아이피지 포토닉스 코포레이션 플랫 패널 디스플레이에 대한 섬유 레이저 어닐링된 다결정질 실리콘 막의 형태학적 특징을 측정하는 공정 및 시스템
KR102580107B1 (ko) * 2016-10-04 2023-09-18 케이엘에이 코포레이션 반도체 디바이스 제조 중 분광 측정의 촉진
US9976969B1 (en) 2016-10-28 2018-05-22 Coherent Lasersystems Gmbh & Co. Kg Monitoring method and apparatus for excimer-laser annealing process
TWI612293B (zh) * 2016-11-18 2018-01-21 財團法人工業技術研究院 Ｌｔｐｓ背板結晶品質檢測裝置及其方法
US10069273B1 (en) 2017-03-02 2018-09-04 Coherent Lasersystems Gmbh & Co. Kg Lasing-gas mixture for excimer laser
US10234765B2 (en) * 2017-06-05 2019-03-19 Coherent Lasersystems Gmbh & Co. Kg Energy controller for excimer-laser silicon crystallization
CN107395929B (zh) * 2017-08-15 2020-02-18 宜科(天津)电子有限公司 基于面阵ccd/cmos的360°检测传感器及检测方法
CN107677686B (zh) * 2017-09-28 2021-01-26 京东方科技集团股份有限公司 光线透过窗集成装置及采用该装置的设备
CN108048913A (zh) * 2017-12-14 2018-05-18 友达光电（昆山）有限公司 一种非晶硅转变为多晶硅的结晶激光装置及方法
GB2587691B (en) * 2018-03-16 2022-02-09 X Fab Texas Inc Use of wafer brightness to monitor laser anneal process and laser anneal tool
GB2571997B (en) * 2018-03-16 2021-10-27 X Fab Texas Inc Use of wafer brightness to monitor laser anneal process and laser anneal tool
CN108878274B (zh) * 2018-06-26 2020-12-04 上海华力微电子有限公司 快速热退火工艺能力的监控方法
JP7542350B2 (ja) * 2020-07-21 2024-08-30 Ｊｓｗアクティナシステム株式会社 レーザアニール装置、レーザアニール方法、及び半導体装置の製造方法
US12148615B2 (en) 2021-05-06 2024-11-19 Coherent Lasersystems Gmbh & Co. Kg Method and apparatus for laser annealing
JP7710326B2 (ja) * 2021-07-12 2025-07-18 Ｊｓｗアクティナシステム株式会社 レーザ照射装置、レーザ照射方法、及びプログラム

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004172424A (ja) 2002-11-21 2004-06-17 Japan Steel Works Ltd:The 結晶の周期性構造の形成方法及びその装置並びに結晶の周期性構造
US20050002016A1 (en) 2003-07-01 2005-01-06 Au Optronics Corp. Inspection method and apparatus of laser crystallized silicons
US20070173039A1 (en) 2004-03-04 2007-07-26 Sharp Kabushiki Kaisha Method for fabricating a semiconductor device and apparatus for inspecting a semiconductor

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4810047A (en) * 1988-02-16 1989-03-07 Grumman Aerospace Corporation In-line holographic lens arrangement
US5432607A (en) * 1993-02-22 1995-07-11 International Business Machines Corporation Method and apparatus for inspecting patterned thin films using diffracted beam ellipsometry
US5473426A (en) * 1993-03-05 1995-12-05 Nikon Corporation Defect inspection apparatus
JP3342387B2 (ja) * 1997-02-28 2002-11-05 三洋電機株式会社 半導体膜の評価方法、評価装置及び形成方法
JP2001110861A (ja) * 1999-10-06 2001-04-20 Seiko Epson Corp 半導体膜の検査方法、薄膜トランジスタの製造方法、および半導体膜の検査装置
US6429943B1 (en) * 2000-03-29 2002-08-06 Therma-Wave, Inc. Critical dimension analysis with simultaneous multiple angle of incidence measurements
US6864971B2 (en) * 2001-03-27 2005-03-08 Isoa, Inc. System and method for performing optical inspection utilizing diffracted light
US6639201B2 (en) * 2001-11-07 2003-10-28 Applied Materials, Inc. Spot grid array imaging system
JP3794482B2 (ja) * 2002-04-19 2006-07-05 株式会社日本製鋼所 結晶化Ｓｉ膜の評価方法及びその装置
US7359045B2 (en) * 2002-05-06 2008-04-15 Applied Materials, Israel, Ltd. High speed laser scanning inspection system
KR101058464B1 (ko) * 2002-08-19 2011-08-24 더 트러스티스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 기판상의 필름영역과 그 에지영역에서의 실질적인 균일성을제공하기 위한 필름영역의 레이저 결정 가공을 위한 방법과 시스템 및 그 필름영역을 가진 구조물
US7006224B2 (en) * 2002-12-30 2006-02-28 Applied Materials, Israel, Ltd. Method and system for optical inspection of an object
JP2005191173A (ja) * 2003-12-25 2005-07-14 Hitachi Ltd 表示装置及びその製造方法
JP2006040949A (ja) * 2004-07-22 2006-02-09 Advanced Lcd Technologies Development Center Co Ltd レーザー結晶化装置及びレーザー結晶化方法
US7247813B2 (en) * 2004-10-13 2007-07-24 Advanced Lcd Technologies Development Center Co., Ltd. Crystallization apparatus using pulsed laser beam
US7515253B2 (en) * 2005-01-12 2009-04-07 Kla-Tencor Technologies Corporation System for measuring a sample with a layer containing a periodic diffracting structure
WO2007100608A1 (en) * 2006-02-22 2007-09-07 Coherent, Inc. Laser beam micro-smoothing
JP4876019B2 (ja) * 2007-04-25 2012-02-15 株式会社日立ハイテクノロジーズ 欠陥検査装置およびその方法
US7659989B2 (en) * 2007-06-29 2010-02-09 Coherent, Inc. Focus determination for laser-mask imaging systems
FR2921012A1 (fr) * 2007-09-13 2009-03-20 Advanced Track And Trace Sa Procede et dispositif de marquage d'une surface par nanostructures periodiques controlees
JP4618360B2 (ja) * 2008-10-10 2011-01-26 ソニー株式会社 レーザアニール方法およびレーザアニール装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004172424A (ja) 2002-11-21 2004-06-17 Japan Steel Works Ltd:The 結晶の周期性構造の形成方法及びその装置並びに結晶の周期性構造
US20050002016A1 (en) 2003-07-01 2005-01-06 Au Optronics Corp. Inspection method and apparatus of laser crystallized silicons
US20070173039A1 (en) 2004-03-04 2007-07-26 Sharp Kabushiki Kaisha Method for fabricating a semiconductor device and apparatus for inspecting a semiconductor

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KR20150034186A (ko) 2015-04-02
JP6150887B2 (ja) 2017-06-21
JP2015528201A (ja) 2015-09-24
CN104641460A (zh) 2015-05-20
CN104641460B (zh) 2017-08-18
WO2013190040A1 (en) 2013-12-27
TWI563538B (en) 2016-12-21
TW201405632A (zh) 2014-02-01
US20130341310A1 (en) 2013-12-26

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