JP2019521321A - フラットパネルディスプレイのための、ファイバーレーザーアニーリングされた多結晶シリコンフィルムの形態学的特徴を測定するためのプロセス及びシステム - Google Patents
フラットパネルディスプレイのための、ファイバーレーザーアニーリングされた多結晶シリコンフィルムの形態学的特徴を測定するためのプロセス及びシステム Download PDFInfo
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Abstract
Description
フラットパネルディスプレイ(FPD)製造環境は、世界で最も競争が激しく且つ技術的に複雑である。薄膜トランジスタ(TFT)技術は、図1に示されるように、高解像度、高性能の液晶ディスプレイ(LCD)、又はここで特に対象となる有機発光ダイオード(OLED)の何れかであり得るFPDに関する基礎である。TFTディスプレイ回路は、アモルファスシリコン(「a−シリコン又はa−Si」)の薄い半透明層の上で作製され、且つ、個別のピクセルに対応するための層にわたるバックプレーンにおいて配される。
Claims (18)
- 各々が、グレインに関して一様である、長さ(Lg)及び幅(Wg)を有する左右交互に位置したグレインの少なくとも1つの行、によって画定される、結晶構造を有するレーザーアニールフィルムの形態学的特徴を測定する方法であって、前記行の長さ(Lr)が、前記グレインの累積幅Wgに対応し、且つ様々な次数を有する回折を生成し、前記方法が、
単色光を生成する段階と;
0o(入射)とグレージング角との間の範囲において変わる角度で前記レーザーアニールフィルムの表面上へ前記単色光を向ける段階と;
前記表面から回折された前記単色光の特性の変化を測定し、それによって、1つの行の長さ(Lr)に沿ってレーザーアニールフィルムの形態学的特徴を測定する段階と;
を含む、方法。 - 前記フィルムが、多結晶シリコン(p−Si)フィルムであり、且つ、前記レーザーアニールフィルムの所望の領域を累積的に画定し、行幅Wr及び行長さLrにおいて隣接している1つ及び追加の行のアレイを有する、請求項1に記載の方法。
- 特性の変化の測定の所望の空間分解能に関連する設置面積を有する向けられた単色光によって前記レーザーアニールフィルムの所望の領域をラスタスキャンする段階をさらに含む、請求項1又は2に記載の方法。
- 所望の回折次数でピクセル検出器上へ結像されることになる前記レーザーアニールフィルムの前記所望の領域を照射し、それによって前記変化を測定する段階をさらに含む、請求項1から3の何れか一項に記載の方法。
- 前記所望の領域を照射する段階が、前記向けられた単色光の前記回折次数の画像化を含む、請求項4に記載の方法。
- 前記回折光の、測定された特性のマップを生成する段階をさらに含み、前記特性が、回折効率、照明アレイの数に対応する回折角、及び回折光の偏光状態を含む、請求項1から5の何れか一項に記載の方法。
- 前記回折光の前記測定された特性の許容範囲を決定する段階をさらに含む請求項1から6の何れか一項に記載の方法。
- 複数のレーザーアニールされた行の分散不均質性(MURA)を決定する段階をさらに含む請求項7に記載の方法。
- レーザーアニーリングプロセスの間に前記レーザーアニールフィルムの前記測定された特性を許容範囲と比較する段階と、
前記回折光の任意の前記測定された特性が前記許容範囲の外側である場合に、前記レーザーアニーリングプロセスを中断する制御信号を生成する段階と、をさらに含む、請求項1から8の何れか一項に記載の方法。 - p−Siフィルムへ変換されたアモルファスシリコンフィルムの一部のレーザーアニーリングプロセスの間に、前記フィルムの残りがアニーリングされつつ、前記測定された特性を前記許容範囲と比較する段階と、
任意の前記測定された特性が前記許容範囲の外側である場合に、リアルタイムで制御信号を生成する段階と、
前記レーザーアニーリングプロセスのパラメータを調整して、前記範囲内に特性を持っていく段階と、をさらに含む、請求項8に記載の方法。 - グレインに関して一様であり且つ行の幅(Wr)を画定する、長さ(Lg)を各々が有する左右交互に位置したグレインの少なくとも1つの行によって画定される、結晶構造を有するレーザーアニールフィルムの形態学的特徴を測定するためのシステムであって、前記行の長さ(Lr)が、前記グレインの累積幅Wgに対応し、且つ回折の様々な次数の回折を画定し、前記システムが、
単色光のレーザー源と;
ある角度で前記レーザーアニールフィルムの表面上へ前記単色光を向ける誘導光学系と;
回折単色光の特性の変化を測定し且つ信号を生成するように構成されたセンサーと;
前記センサーから前記信号を受け取り且つ1つの行に沿ってグレインの不均質性を決定するように作動する処理ユニットと、
を含むシステム。 - 前記レーザー源が、その上で所望の領域を累積的に画定する行のアレイを提供するように前記フィルムをレーザーアニーリングするように作動し、前記行が、行幅Wr及び行の長さLrにおいて隣接している、請求項11に記載のシステム。
- 特性の変化の測定の所望の空間分解能に関連する設置面積を有する向けられた単色光によって前記レーザーアニールフィルムの所望の領域をラスタスキャンするように作動するスキャナーをさらに含む請求項11に記載のシステム。
- 前記スキャナーが、検流計、スキャンポリゴン又は音響光学偏向器を含み、前記センサーがフォトダイオードである、請求項13に記載のシステム。
- スキャナーが、イメージングシステムを含み、前記イメージングシステムが、前記センサーによって構成されており、前記レーザーアニールフィルムから離間したピクセル検出器、及び、前記単色光によって照射される所望の領域間のイメージングレンズを含み、レンズが、前記ピクセル検出器上の前記照射された所望の領域を画像化し、前記ピクセル検出器が電荷結合素子(CCD)である、請求項11に記載のシステム。
- 前記回折光の前記測定された特性が、回折効率の前記測定された不均質性、回折角(照明アレイの数)、及び前記回折光の偏光状態を含む、請求項11に記載のシステム。
- 前記処理ユニットが、前記回折光の前記特性の前記測定された不均質性の許容範囲を決定するように作動する請求項11に記載のシステム。
- ガラス基板上でアモルファスシリコン(a−Si)フィルムをアニーリングするためのレーザーアニーリングシステムであって、
前記a−Siフィルムの下にあるサポートと;
パルス光線を出力するファイバーレーザー源と;
その短軸及び長軸に沿って前記パルス光線を連続的にコリメートするように作動するコリメートユニットと;
マスク平面で向けられる一様な線形パルスビームを提供するようにコリメートレーザービームを処理するように作動する均質化ユニットと;
前記フィルムに対向する前記マスク平面で前記一様な線形ビームの焦点を合わせるように作動する集束ユニットと;
互いに対して前記一様な線形ビーム及びp−Siフィルムを備えた前記サポートの変位を提供するように作動して、グレインに関して一様である長さ(Lg)及び幅(Wg)を各々が有する左右交互に位置したグレインの少なくとも1つの行によって画定される多結晶シリコン(p−Si)結晶構造のフィルムに前記a−Siフィルムを変換する、アクチュエータであって、前記行の長さ(Lr)が、前記グレインの累積幅Wgに対応し、且つ回折の様々な次数の回折を画定する、アクチュエータと;
請求項11から17の何れか一項に記載の前記p−Siフィルムの不均質性を定量的に決定するように作動するシステムと、
を含む、レーザーアニーリングシステム。
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US20200321363A1 (en) | 2020-10-08 |
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