JP6141223B2 - 受光素子モジュールおよびその製造方法 - Google Patents

受光素子モジュールおよびその製造方法 Download PDF

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Publication number
JP6141223B2
JP6141223B2 JP2014066797A JP2014066797A JP6141223B2 JP 6141223 B2 JP6141223 B2 JP 6141223B2 JP 2014066797 A JP2014066797 A JP 2014066797A JP 2014066797 A JP2014066797 A JP 2014066797A JP 6141223 B2 JP6141223 B2 JP 6141223B2
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Japan
Prior art keywords
light receiving
inter
electrode
receiving element
main body
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JP2014066797A
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Japanese (ja)
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JP2015019049A (ja
JP2015019049A5 (https=
Inventor
大介 新延
大介 新延
坂井　裕一
裕一 坂井
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP2014066797A priority Critical patent/JP6141223B2/ja
Priority to US14/302,567 priority patent/US9691925B2/en
Priority to CN201410260831.2A priority patent/CN104241429B/zh
Publication of JP2015019049A publication Critical patent/JP2015019049A/ja
Publication of JP2015019049A5 publication Critical patent/JP2015019049A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
    • H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
    • H10F19/904—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells characterised by the shapes of the structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
    • H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
    • H10F19/908—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells for back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/137—Batch treatment of the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Light Receiving Elements (AREA)
  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
JP2014066797A 2013-06-14 2014-03-27 受光素子モジュールおよびその製造方法 Active JP6141223B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2014066797A JP6141223B2 (ja) 2013-06-14 2014-03-27 受光素子モジュールおよびその製造方法
US14/302,567 US9691925B2 (en) 2013-06-14 2014-06-12 Light receiving element module and manufacturing method therefor
CN201410260831.2A CN104241429B (zh) 2013-06-14 2014-06-12 受光元件模块及其制造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013125473 2013-06-14
JP2013125473 2013-06-14
JP2014066797A JP6141223B2 (ja) 2013-06-14 2014-03-27 受光素子モジュールおよびその製造方法

Publications (3)

Publication Number Publication Date
JP2015019049A JP2015019049A (ja) 2015-01-29
JP2015019049A5 JP2015019049A5 (https=) 2016-02-25
JP6141223B2 true JP6141223B2 (ja) 2017-06-07

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JP2014066797A Active JP6141223B2 (ja) 2013-06-14 2014-03-27 受光素子モジュールおよびその製造方法

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Country Link
US (1) US9691925B2 (https=)
JP (1) JP6141223B2 (https=)
CN (1) CN104241429B (https=)

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Publication number Priority date Publication date Assignee Title
CN111933748A (zh) * 2020-07-22 2020-11-13 中国电子科技集团公司第十三研究所 背入射式日盲紫外探测器及其制作方法

Also Published As

Publication number Publication date
JP2015019049A (ja) 2015-01-29
CN104241429A (zh) 2014-12-24
US20140366928A1 (en) 2014-12-18
CN104241429B (zh) 2016-09-14
US9691925B2 (en) 2017-06-27

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