JP6127561B2 - 半導体受光装置 - Google Patents

半導体受光装置 Download PDF

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Publication number
JP6127561B2
JP6127561B2 JP2013025660A JP2013025660A JP6127561B2 JP 6127561 B2 JP6127561 B2 JP 6127561B2 JP 2013025660 A JP2013025660 A JP 2013025660A JP 2013025660 A JP2013025660 A JP 2013025660A JP 6127561 B2 JP6127561 B2 JP 6127561B2
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JP
Japan
Prior art keywords
submount
header
electrode pad
semiconductor light
light receiving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2013025660A
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English (en)
Japanese (ja)
Other versions
JP2014154823A5 (enExample
JP2014154823A (ja
Inventor
祐士 増山
祐士 増山
中路　雅晴
雅晴 中路
義浩 久
義浩 久
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2013025660A priority Critical patent/JP6127561B2/ja
Priority to US14/065,477 priority patent/US9329077B2/en
Priority to CN201310614577.7A priority patent/CN103985768B/zh
Publication of JP2014154823A publication Critical patent/JP2014154823A/ja
Publication of JP2014154823A5 publication Critical patent/JP2014154823A5/ja
Application granted granted Critical
Publication of JP6127561B2 publication Critical patent/JP6127561B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/0204—Compact construction
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/0271—Housings; Attachments or accessories for photometers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Light Receiving Elements (AREA)
  • Optical Head (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
JP2013025660A 2013-02-13 2013-02-13 半導体受光装置 Active JP6127561B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2013025660A JP6127561B2 (ja) 2013-02-13 2013-02-13 半導体受光装置
US14/065,477 US9329077B2 (en) 2013-02-13 2013-10-29 Semiconductor photodetector device
CN201310614577.7A CN103985768B (zh) 2013-02-13 2013-11-28 半导体光接收装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013025660A JP6127561B2 (ja) 2013-02-13 2013-02-13 半導体受光装置

Publications (3)

Publication Number Publication Date
JP2014154823A JP2014154823A (ja) 2014-08-25
JP2014154823A5 JP2014154823A5 (enExample) 2016-01-21
JP6127561B2 true JP6127561B2 (ja) 2017-05-17

Family

ID=51277667

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013025660A Active JP6127561B2 (ja) 2013-02-13 2013-02-13 半導体受光装置

Country Status (3)

Country Link
US (1) US9329077B2 (enExample)
JP (1) JP6127561B2 (enExample)
CN (1) CN103985768B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017126949A (ja) * 2016-01-15 2017-07-20 国立研究開発法人情報通信研究機構 光電変換器
CN106024649A (zh) * 2016-07-12 2016-10-12 希睿（厦门）科技有限公司 一种超薄环境光与接近传感器的晶圆级封装及其封装方法
JP1624076S (enExample) * 2018-04-16 2019-02-12
CN111146296A (zh) * 2018-11-05 2020-05-12 上海集耀电子有限公司 一种改进的光敏接收管
CN111952705B (zh) * 2020-08-28 2025-09-09 中国电子科技集团公司第九研究所 一种通讯用小型化隔离器的封装外壳及其制作方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH054534U (ja) 1991-02-18 1993-01-22 三菱電機株式会社 レーザダイオードチツプキヤリア
JP2002289956A (ja) * 2001-03-22 2002-10-04 Kyocera Corp 半導体レーザ装置
JP2003134051A (ja) 2001-10-25 2003-05-09 Opnext Japan Inc 光受信モジュール、光受信器及び光ファイバ通信機器
KR100575950B1 (ko) * 2003-06-20 2006-05-02 삼성전자주식회사 티오 캔 구조의 광수신 모듈
JP2006114635A (ja) * 2004-10-13 2006-04-27 Sharp Corp 半導体装置
JP2006253676A (ja) 2005-03-08 2006-09-21 Sumitomo Electric Ind Ltd 光アセンブリ
MY157744A (en) * 2006-02-17 2016-07-15 Finisar Corp Discrete bootstrapping in an optical receiver to prevent signal feedback
CN100592585C (zh) * 2006-03-28 2010-02-24 三菱电机株式会社 光学元件用组件及使用该组件的光学半导体器件
JP4970924B2 (ja) * 2006-03-28 2012-07-11 三菱電機株式会社 光素子用パッケージとこれを用いた光半導体装置
JP2010251570A (ja) * 2009-04-16 2010-11-04 Mitsubishi Electric Corp 光受信モジュール

Also Published As

Publication number Publication date
US9329077B2 (en) 2016-05-03
CN103985768A (zh) 2014-08-13
JP2014154823A (ja) 2014-08-25
US20140224967A1 (en) 2014-08-14
CN103985768B (zh) 2016-10-26

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