JP6124156B2 - 静電チャックおよびウェーハ処理装置 - Google Patents

静電チャックおよびウェーハ処理装置 Download PDF

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Publication number
JP6124156B2
JP6124156B2 JP2015086807A JP2015086807A JP6124156B2 JP 6124156 B2 JP6124156 B2 JP 6124156B2 JP 2015086807 A JP2015086807 A JP 2015086807A JP 2015086807 A JP2015086807 A JP 2015086807A JP 6124156 B2 JP6124156 B2 JP 6124156B2
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JP
Japan
Prior art keywords
dielectric substrate
ceramic dielectric
outer periphery
electrode layer
interval
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2015086807A
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English (en)
Japanese (ja)
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JP2016207806A5 (enExample
JP2016207806A (ja
Inventor
和輝 穴田
和輝 穴田
雄一 吉井
雄一 吉井
琢真 和田
琢真 和田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toto Ltd
Original Assignee
Toto Ltd
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Publication date
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=57143470&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP6124156(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Toto Ltd filed Critical Toto Ltd
Priority to JP2015086807A priority Critical patent/JP6124156B2/ja
Priority to KR1020187011953A priority patent/KR20180049176A/ko
Priority to CN201580077698.XA priority patent/CN107431038B/zh
Priority to PCT/JP2015/062905 priority patent/WO2016170694A1/ja
Priority to KR1020177019576A priority patent/KR101855228B1/ko
Priority to TW104113464A priority patent/TWI553774B/zh
Publication of JP2016207806A publication Critical patent/JP2016207806A/ja
Publication of JP2016207806A5 publication Critical patent/JP2016207806A5/ja
Publication of JP6124156B2 publication Critical patent/JP6124156B2/ja
Application granted granted Critical
Priority to US15/788,132 priority patent/US10714373B2/en
Active legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7606—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction

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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
JP2015086807A 2015-04-21 2015-04-21 静電チャックおよびウェーハ処理装置 Active JP6124156B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2015086807A JP6124156B2 (ja) 2015-04-21 2015-04-21 静電チャックおよびウェーハ処理装置
KR1020177019576A KR101855228B1 (ko) 2015-04-21 2015-04-28 정전척 및 웨이퍼 처리 장치
CN201580077698.XA CN107431038B (zh) 2015-04-21 2015-04-28 静电吸盘以及晶片处理装置
PCT/JP2015/062905 WO2016170694A1 (ja) 2015-04-21 2015-04-28 静電チャックおよびウェーハ処理装置
KR1020187011953A KR20180049176A (ko) 2015-04-21 2015-04-28 정전척 및 웨이퍼 처리 장치
TW104113464A TWI553774B (zh) 2015-04-21 2015-04-28 Electrostatic sucker and wafer handling device
US15/788,132 US10714373B2 (en) 2015-04-21 2017-10-19 Electrostatic chuck and wafer processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015086807A JP6124156B2 (ja) 2015-04-21 2015-04-21 静電チャックおよびウェーハ処理装置

Publications (3)

Publication Number Publication Date
JP2016207806A JP2016207806A (ja) 2016-12-08
JP2016207806A5 JP2016207806A5 (enExample) 2017-03-30
JP6124156B2 true JP6124156B2 (ja) 2017-05-10

Family

ID=57143470

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015086807A Active JP6124156B2 (ja) 2015-04-21 2015-04-21 静電チャックおよびウェーハ処理装置

Country Status (6)

Country Link
US (1) US10714373B2 (enExample)
JP (1) JP6124156B2 (enExample)
KR (2) KR101855228B1 (enExample)
CN (1) CN107431038B (enExample)
TW (1) TWI553774B (enExample)
WO (1) WO2016170694A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11133211B2 (en) * 2018-08-22 2021-09-28 Lam Research Corporation Ceramic baseplate with channels having non-square corners
US20210159107A1 (en) * 2019-11-21 2021-05-27 Applied Materials, Inc. Edge uniformity tunability on bipolar electrostatic chuck
KR20220016387A (ko) * 2020-07-31 2022-02-09 삼성디스플레이 주식회사 정전척, 에칭 장치 및 표시 장치의 제조 방법
WO2022146667A1 (en) 2020-12-29 2022-07-07 Mattson Technology, Inc. Electrostatic chuck assembly for plasma processing apparatus
EP4281832A4 (en) * 2021-01-20 2025-03-05 Applied Materials, Inc. ANTI-SLIP PAD SUPPORT RING
JP7623084B2 (ja) * 2021-03-08 2025-01-28 東京エレクトロン株式会社 基板支持器
JP7745434B2 (ja) * 2021-11-05 2025-09-29 日本特殊陶業株式会社 基板保持部材及び基板保持部材の製造方法
JP2025176267A (ja) * 2024-05-21 2025-12-04 Toto株式会社 静電チャック

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100635845B1 (ko) * 1999-07-08 2006-10-18 램 리써치 코포레이션 정전기 척 및 그 제조 방법
JP2004282047A (ja) * 2003-02-25 2004-10-07 Kyocera Corp 静電チャック
JP4031419B2 (ja) * 2003-09-19 2008-01-09 日本碍子株式会社 静電チャック及びその製造方法
US7646580B2 (en) 2005-02-24 2010-01-12 Kyocera Corporation Electrostatic chuck and wafer holding member and wafer treatment method
JP4796523B2 (ja) * 2006-03-24 2011-10-19 日本碍子株式会社 セラミックス焼成体の製造方法
JP5069452B2 (ja) * 2006-04-27 2012-11-07 アプライド マテリアルズ インコーポレイテッド 二重温度帯を有する静電チャックをもつ基板支持体
JP2008042140A (ja) * 2006-08-10 2008-02-21 Tokyo Electron Ltd 静電チャック装置
WO2008099789A1 (ja) * 2007-02-15 2008-08-21 Creative Technology Corporation 静電チャック
JP5025576B2 (ja) 2008-06-13 2012-09-12 新光電気工業株式会社 静電チャック及び基板温調固定装置
CN102308380B (zh) * 2009-02-04 2014-06-04 马特森技术有限公司 用于径向调整衬底的表面上的温度轮廓的静电夹具系统及方法
JP5496630B2 (ja) * 2009-12-10 2014-05-21 東京エレクトロン株式会社 静電チャック装置
JP5218865B2 (ja) * 2010-03-26 2013-06-26 Ｔｏｔｏ株式会社 静電チャック
JP5339162B2 (ja) 2011-03-30 2013-11-13 Ｔｏｔｏ株式会社 静電チャック
JP5816454B2 (ja) * 2011-05-09 2015-11-18 新光電気工業株式会社 基板温調固定装置
JP5441019B1 (ja) * 2012-08-29 2014-03-12 Ｔｏｔｏ株式会社 静電チャック
JP5441021B1 (ja) * 2012-09-12 2014-03-12 Ｔｏｔｏ株式会社 静電チャック
JP6001402B2 (ja) * 2012-09-28 2016-10-05 日本特殊陶業株式会社 静電チャック
JP5633766B2 (ja) * 2013-03-29 2014-12-03 Toto株式会社 静電チャック
JP2015088743A (ja) * 2013-09-27 2015-05-07 Toto株式会社 静電チャック

Also Published As

Publication number Publication date
US20180040499A1 (en) 2018-02-08
JP2016207806A (ja) 2016-12-08
TW201639070A (zh) 2016-11-01
CN107431038A (zh) 2017-12-01
KR101855228B1 (ko) 2018-05-09
US10714373B2 (en) 2020-07-14
CN107431038B (zh) 2021-08-10
KR20180049176A (ko) 2018-05-10
TWI553774B (zh) 2016-10-11
WO2016170694A1 (ja) 2016-10-27
KR20170095979A (ko) 2017-08-23

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