KR101855228B1 - 정전척 및 웨이퍼 처리 장치 - Google Patents

정전척 및 웨이퍼 처리 장치 Download PDF

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Publication number
KR101855228B1
KR101855228B1 KR1020177019576A KR20177019576A KR101855228B1 KR 101855228 B1 KR101855228 B1 KR 101855228B1 KR 1020177019576 A KR1020177019576 A KR 1020177019576A KR 20177019576 A KR20177019576 A KR 20177019576A KR 101855228 B1 KR101855228 B1 KR 101855228B1
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South Korea
Prior art keywords
dielectric substrate
ceramic dielectric
outer periphery
electrode layer
imaginary line
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KR1020177019576A
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English (en)
Korean (ko)
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KR20170095979A (ko
Inventor
카즈키 아나다
유이치 요시이
타쿠마 와다
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토토 가부시키가이샤
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=57143470&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR101855228(B1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 토토 가부시키가이샤 filed Critical 토토 가부시키가이샤
Publication of KR20170095979A publication Critical patent/KR20170095979A/ko
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    • H01L21/6833—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H01L21/6835—
    • H01L21/68721—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7606—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
KR1020177019576A 2015-04-21 2015-04-28 정전척 및 웨이퍼 처리 장치 Active KR101855228B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2015-086807 2015-04-21
JP2015086807A JP6124156B2 (ja) 2015-04-21 2015-04-21 静電チャックおよびウェーハ処理装置
PCT/JP2015/062905 WO2016170694A1 (ja) 2015-04-21 2015-04-28 静電チャックおよびウェーハ処理装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020187011953A Division KR20180049176A (ko) 2015-04-21 2015-04-28 정전척 및 웨이퍼 처리 장치

Publications (2)

Publication Number Publication Date
KR20170095979A KR20170095979A (ko) 2017-08-23
KR101855228B1 true KR101855228B1 (ko) 2018-05-09

Family

ID=57143470

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020177019576A Active KR101855228B1 (ko) 2015-04-21 2015-04-28 정전척 및 웨이퍼 처리 장치
KR1020187011953A Withdrawn KR20180049176A (ko) 2015-04-21 2015-04-28 정전척 및 웨이퍼 처리 장치

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020187011953A Withdrawn KR20180049176A (ko) 2015-04-21 2015-04-28 정전척 및 웨이퍼 처리 장치

Country Status (6)

Country Link
US (1) US10714373B2 (enExample)
JP (1) JP6124156B2 (enExample)
KR (2) KR101855228B1 (enExample)
CN (1) CN107431038B (enExample)
TW (1) TWI553774B (enExample)
WO (1) WO2016170694A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11133211B2 (en) * 2018-08-22 2021-09-28 Lam Research Corporation Ceramic baseplate with channels having non-square corners
US20210159107A1 (en) * 2019-11-21 2021-05-27 Applied Materials, Inc. Edge uniformity tunability on bipolar electrostatic chuck
KR20220016387A (ko) * 2020-07-31 2022-02-09 삼성디스플레이 주식회사 정전척, 에칭 장치 및 표시 장치의 제조 방법
WO2022146667A1 (en) 2020-12-29 2022-07-07 Mattson Technology, Inc. Electrostatic chuck assembly for plasma processing apparatus
EP4281832A4 (en) * 2021-01-20 2025-03-05 Applied Materials, Inc. ANTI-SLIP PAD SUPPORT RING
JP7623084B2 (ja) * 2021-03-08 2025-01-28 東京エレクトロン株式会社 基板支持器
JP7745434B2 (ja) * 2021-11-05 2025-09-29 日本特殊陶業株式会社 基板保持部材及び基板保持部材の製造方法
JP2025176267A (ja) * 2024-05-21 2025-12-04 Toto株式会社 静電チャック

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009302347A (ja) 2008-06-13 2009-12-24 Shinko Electric Ind Co Ltd 静電チャック及び基板温調固定装置
JP2012212735A (ja) 2011-03-30 2012-11-01 Toto Ltd 静電チャック
WO2014157571A1 (ja) 2013-03-29 2014-10-02 Toto株式会社 静電チャック

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100635845B1 (ko) * 1999-07-08 2006-10-18 램 리써치 코포레이션 정전기 척 및 그 제조 방법
JP2004282047A (ja) * 2003-02-25 2004-10-07 Kyocera Corp 静電チャック
JP4031419B2 (ja) * 2003-09-19 2008-01-09 日本碍子株式会社 静電チャック及びその製造方法
US7646580B2 (en) 2005-02-24 2010-01-12 Kyocera Corporation Electrostatic chuck and wafer holding member and wafer treatment method
JP4796523B2 (ja) * 2006-03-24 2011-10-19 日本碍子株式会社 セラミックス焼成体の製造方法
JP5069452B2 (ja) * 2006-04-27 2012-11-07 アプライド マテリアルズ インコーポレイテッド 二重温度帯を有する静電チャックをもつ基板支持体
JP2008042140A (ja) * 2006-08-10 2008-02-21 Tokyo Electron Ltd 静電チャック装置
WO2008099789A1 (ja) * 2007-02-15 2008-08-21 Creative Technology Corporation 静電チャック
CN102308380B (zh) * 2009-02-04 2014-06-04 马特森技术有限公司 用于径向调整衬底的表面上的温度轮廓的静电夹具系统及方法
JP5496630B2 (ja) * 2009-12-10 2014-05-21 東京エレクトロン株式会社 静電チャック装置
JP5218865B2 (ja) * 2010-03-26 2013-06-26 Ｔｏｔｏ株式会社 静電チャック
JP5816454B2 (ja) * 2011-05-09 2015-11-18 新光電気工業株式会社 基板温調固定装置
JP5441019B1 (ja) * 2012-08-29 2014-03-12 Ｔｏｔｏ株式会社 静電チャック
JP5441021B1 (ja) * 2012-09-12 2014-03-12 Ｔｏｔｏ株式会社 静電チャック
JP6001402B2 (ja) * 2012-09-28 2016-10-05 日本特殊陶業株式会社 静電チャック
JP2015088743A (ja) * 2013-09-27 2015-05-07 Toto株式会社 静電チャック

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009302347A (ja) 2008-06-13 2009-12-24 Shinko Electric Ind Co Ltd 静電チャック及び基板温調固定装置
JP2012212735A (ja) 2011-03-30 2012-11-01 Toto Ltd 静電チャック
WO2014157571A1 (ja) 2013-03-29 2014-10-02 Toto株式会社 静電チャック

Also Published As

Publication number Publication date
US20180040499A1 (en) 2018-02-08
JP2016207806A (ja) 2016-12-08
TW201639070A (zh) 2016-11-01
CN107431038A (zh) 2017-12-01
US10714373B2 (en) 2020-07-14
CN107431038B (zh) 2021-08-10
KR20180049176A (ko) 2018-05-10
TWI553774B (zh) 2016-10-11
JP6124156B2 (ja) 2017-05-10
WO2016170694A1 (ja) 2016-10-27
KR20170095979A (ko) 2017-08-23

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