KR101855228B1 - 정전척 및 웨이퍼 처리 장치 - Google Patents

정전척 및 웨이퍼 처리 장치 Download PDF

Info

Publication number
KR101855228B1
KR101855228B1 KR1020177019576A KR20177019576A KR101855228B1 KR 101855228 B1 KR101855228 B1 KR 101855228B1 KR 1020177019576 A KR1020177019576 A KR 1020177019576A KR 20177019576 A KR20177019576 A KR 20177019576A KR 101855228 B1 KR101855228 B1 KR 101855228B1
Authority
KR
South Korea
Prior art keywords
dielectric substrate
ceramic dielectric
outer periphery
electrode layer
imaginary line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020177019576A
Other languages
English (en)
Korean (ko)
Other versions
KR20170095979A (ko
Inventor
카즈키 아나다
유이치 요시이
타쿠마 와다
Original Assignee
토토 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=57143470&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR101855228(B1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 토토 가부시키가이샤 filed Critical 토토 가부시키가이샤
Publication of KR20170095979A publication Critical patent/KR20170095979A/ko
Application granted granted Critical
Publication of KR101855228B1 publication Critical patent/KR101855228B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
KR1020177019576A 2015-04-21 2015-04-28 정전척 및 웨이퍼 처리 장치 Active KR101855228B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015086807A JP6124156B2 (ja) 2015-04-21 2015-04-21 静電チャックおよびウェーハ処理装置
JPJP-P-2015-086807 2015-04-21
PCT/JP2015/062905 WO2016170694A1 (ja) 2015-04-21 2015-04-28 静電チャックおよびウェーハ処理装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020187011953A Division KR20180049176A (ko) 2015-04-21 2015-04-28 정전척 및 웨이퍼 처리 장치

Publications (2)

Publication Number Publication Date
KR20170095979A KR20170095979A (ko) 2017-08-23
KR101855228B1 true KR101855228B1 (ko) 2018-05-09

Family

ID=57143470

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020177019576A Active KR101855228B1 (ko) 2015-04-21 2015-04-28 정전척 및 웨이퍼 처리 장치
KR1020187011953A Withdrawn KR20180049176A (ko) 2015-04-21 2015-04-28 정전척 및 웨이퍼 처리 장치

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020187011953A Withdrawn KR20180049176A (ko) 2015-04-21 2015-04-28 정전척 및 웨이퍼 처리 장치

Country Status (6)

Country Link
US (1) US10714373B2 (enExample)
JP (1) JP6124156B2 (enExample)
KR (2) KR101855228B1 (enExample)
CN (1) CN107431038B (enExample)
TW (1) TWI553774B (enExample)
WO (1) WO2016170694A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11133211B2 (en) * 2018-08-22 2021-09-28 Lam Research Corporation Ceramic baseplate with channels having non-square corners
US20210159107A1 (en) * 2019-11-21 2021-05-27 Applied Materials, Inc. Edge uniformity tunability on bipolar electrostatic chuck
KR20220016387A (ko) * 2020-07-31 2022-02-09 삼성디스플레이 주식회사 정전척, 에칭 장치 및 표시 장치의 제조 방법
WO2022146667A1 (en) 2020-12-29 2022-07-07 Mattson Technology, Inc. Electrostatic chuck assembly for plasma processing apparatus
US11567417B2 (en) * 2021-01-20 2023-01-31 Applied Materials, Inc. Anti-slippery stamp landing ring
JP7623084B2 (ja) * 2021-03-08 2025-01-28 東京エレクトロン株式会社 基板支持器
JP7745434B2 (ja) * 2021-11-05 2025-09-29 日本特殊陶業株式会社 基板保持部材及び基板保持部材の製造方法
JP2025176267A (ja) * 2024-05-21 2025-12-04 Toto株式会社 静電チャック

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009302347A (ja) 2008-06-13 2009-12-24 Shinko Electric Ind Co Ltd 静電チャック及び基板温調固定装置
JP2012212735A (ja) 2011-03-30 2012-11-01 Toto Ltd 静電チャック
WO2014157571A1 (ja) 2013-03-29 2014-10-02 Toto株式会社 静電チャック

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1194954B1 (en) * 1999-07-08 2011-05-18 Lam Research Corporation Electrostatic chuck and its manufacturing method
JP2004282047A (ja) * 2003-02-25 2004-10-07 Kyocera Corp 静電チャック
JP4031419B2 (ja) * 2003-09-19 2008-01-09 日本碍子株式会社 静電チャック及びその製造方法
US7646580B2 (en) 2005-02-24 2010-01-12 Kyocera Corporation Electrostatic chuck and wafer holding member and wafer treatment method
JP4796523B2 (ja) * 2006-03-24 2011-10-19 日本碍子株式会社 セラミックス焼成体の製造方法
JP5069452B2 (ja) * 2006-04-27 2012-11-07 アプライド マテリアルズ インコーポレイテッド 二重温度帯を有する静電チャックをもつ基板支持体
JP2008042140A (ja) * 2006-08-10 2008-02-21 Tokyo Electron Ltd 静電チャック装置
JP5087561B2 (ja) * 2007-02-15 2012-12-05 株式会社クリエイティブ テクノロジー 静電チャック
KR101691044B1 (ko) * 2009-02-04 2016-12-29 맷슨 테크놀로지, 인크. 기판의 표면에 걸친 온도 프로파일을 방사상으로 튜닝하는 정전 척 시스템 및 방법
JP5496630B2 (ja) * 2009-12-10 2014-05-21 東京エレクトロン株式会社 静電チャック装置
JP5218865B2 (ja) * 2010-03-26 2013-06-26 Ｔｏｔｏ株式会社 静電チャック
JP5816454B2 (ja) * 2011-05-09 2015-11-18 新光電気工業株式会社 基板温調固定装置
JP5441019B1 (ja) * 2012-08-29 2014-03-12 Ｔｏｔｏ株式会社 静電チャック
JP5441021B1 (ja) * 2012-09-12 2014-03-12 Ｔｏｔｏ株式会社 静電チャック
JP6001402B2 (ja) * 2012-09-28 2016-10-05 日本特殊陶業株式会社 静電チャック
JP2015088743A (ja) * 2013-09-27 2015-05-07 Toto株式会社 静電チャック

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009302347A (ja) 2008-06-13 2009-12-24 Shinko Electric Ind Co Ltd 静電チャック及び基板温調固定装置
JP2012212735A (ja) 2011-03-30 2012-11-01 Toto Ltd 静電チャック
WO2014157571A1 (ja) 2013-03-29 2014-10-02 Toto株式会社 静電チャック

Also Published As

Publication number Publication date
WO2016170694A1 (ja) 2016-10-27
US20180040499A1 (en) 2018-02-08
KR20170095979A (ko) 2017-08-23
CN107431038B (zh) 2021-08-10
US10714373B2 (en) 2020-07-14
JP2016207806A (ja) 2016-12-08
TW201639070A (zh) 2016-11-01
KR20180049176A (ko) 2018-05-10
JP6124156B2 (ja) 2017-05-10
CN107431038A (zh) 2017-12-01
TWI553774B (zh) 2016-10-11

Similar Documents

Publication Publication Date Title
KR101855228B1 (ko) 정전척 및 웨이퍼 처리 장치
KR102760927B1 (ko) 정전척 어셈블리
KR101826695B1 (ko) 정전 척 및 웨이퍼 처리장치
TWI614791B (zh) 電漿處理裝置
TWI666679B (zh) 電漿處理裝置及電漿處理方法
US10373854B2 (en) Electrostatic chuck
TWI488236B (zh) Focusing ring and plasma processing device
TWI496240B (zh) 具有聚合物突出物的靜電吸盤
TWI585816B (zh) A plasma processing apparatus, and a plasma processing apparatus
KR101613950B1 (ko) 플라즈마 처리장치
CN110720137B (zh) 具备吸附力控制的静电吸附基板支撑件
JP2015088743A (ja) 静電チャック
JP5411098B2 (ja) 分割可能な電極及びこの電極を用いたプラズマ処理装置ならびに電極交換方法
JP4669137B2 (ja) 分割可能な電極及びこの電極を用いたプラズマ処理装置
JP4355159B2 (ja) 静電吸着ホルダー及び基板処理装置
TWI817391B (zh) 降低局部靜電吸附力
KR102275077B1 (ko) 기판 처리 장치 및 방법
TW202437388A (zh) 電漿處理裝置及電漿處理裝置的樣品台的製造方法

Legal Events

Date Code Title Description
A201 Request for examination
PA0105 International application

Patent event date: 20170714

Patent event code: PA01051R01D

Comment text: International Patent Application

PA0201 Request for examination
PG1501 Laying open of application
A302 Request for accelerated examination
PA0302 Request for accelerated examination

Patent event date: 20170912

Patent event code: PA03022R01D

Comment text: Request for Accelerated Examination

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20170920

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20180130

A107 Divisional application of patent
PA0104 Divisional application for international application

Comment text: Divisional Application for International Patent

Patent event code: PA01041R01D

Patent event date: 20180426

PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20180430

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20180502

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20210420

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20211119

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 20230418

Start annual number: 6

End annual number: 6