JP6123977B2 - 原子発振器 - Google Patents

原子発振器 Download PDF

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Publication number
JP6123977B2
JP6123977B2 JP2012024160A JP2012024160A JP6123977B2 JP 6123977 B2 JP6123977 B2 JP 6123977B2 JP 2012024160 A JP2012024160 A JP 2012024160A JP 2012024160 A JP2012024160 A JP 2012024160A JP 6123977 B2 JP6123977 B2 JP 6123977B2
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JP
Japan
Prior art keywords
light emitting
emitting element
wiring
temperature control
control surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2012024160A
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English (en)
Japanese (ja)
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JP2013162031A (ja
JP2013162031A5 (enExample
Inventor
幸治 珎道
幸治 珎道
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2012024160A priority Critical patent/JP6123977B2/ja
Priority to CN201310046276.9A priority patent/CN103248362B/zh
Priority to US13/759,360 priority patent/US9007136B2/en
Publication of JP2013162031A publication Critical patent/JP2013162031A/ja
Publication of JP2013162031A5 publication Critical patent/JP2013162031A5/ja
Application granted granted Critical
Publication of JP6123977B2 publication Critical patent/JP6123977B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S4/00—Devices using stimulated emission of electromagnetic radiation in wave ranges other than those covered by groups H01S1/00, H01S3/00 or H01S5/00, e.g. phonon masers, X-ray lasers or gamma-ray lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06804—Stabilisation of laser output parameters by monitoring an external parameter, e.g. temperature
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B17/00—Generation of oscillations using radiation source and detector, e.g. with interposed variable obturator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
    • H03L7/00—Automatic control of frequency or phase; Synchronisation
    • H03L7/26—Automatic control of frequency or phase; Synchronisation using energy levels of molecules, atoms, or subatomic particles as a frequency reference
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • Engineering & Computer Science (AREA)
  • Semiconductor Lasers (AREA)
  • Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
  • Led Device Packages (AREA)
  • Electroluminescent Light Sources (AREA)
  • Circuit Arrangement For Electric Light Sources In General (AREA)
JP2012024160A 2012-02-07 2012-02-07 原子発振器 Active JP6123977B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012024160A JP6123977B2 (ja) 2012-02-07 2012-02-07 原子発振器
CN201310046276.9A CN103248362B (zh) 2012-02-07 2013-02-05 发光元件模块及原子振荡器
US13/759,360 US9007136B2 (en) 2012-02-07 2013-02-05 Light-emitting device module and atomic oscillator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012024160A JP6123977B2 (ja) 2012-02-07 2012-02-07 原子発振器

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2016256497A Division JP6365851B2 (ja) 2016-12-28 2016-12-28 発光素子モジュールおよび原子発振器

Publications (3)

Publication Number Publication Date
JP2013162031A JP2013162031A (ja) 2013-08-19
JP2013162031A5 JP2013162031A5 (enExample) 2015-03-05
JP6123977B2 true JP6123977B2 (ja) 2017-05-10

Family

ID=48902374

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012024160A Active JP6123977B2 (ja) 2012-02-07 2012-02-07 原子発振器

Country Status (3)

Country Link
US (1) US9007136B2 (enExample)
JP (1) JP6123977B2 (enExample)
CN (1) CN103248362B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6303481B2 (ja) 2013-12-20 2018-04-04 セイコーエプソン株式会社 発光素子モジュール、量子干渉装置、原子発振器、電子機器および移動体
CN104090482A (zh) * 2014-07-28 2014-10-08 北京无线电计量测试研究所 一种用于便携式原子钟的光学系统及其控制方法
JP2018041835A (ja) 2016-09-07 2018-03-15 セイコーエプソン株式会社 発光素子モジュール、原子発振器、電子機器および移動体
JP6597817B2 (ja) * 2018-03-08 2019-10-30 セイコーエプソン株式会社 発光素子モジュール、量子干渉装置、原子発振器、電子機器および移動体
JP2019175947A (ja) * 2018-03-27 2019-10-10 セイコーエプソン株式会社 原子発振器および周波数信号生成システム
JP2019175946A (ja) * 2018-03-27 2019-10-10 セイコーエプソン株式会社 原子発振器および周波数信号生成システム
JP7090572B2 (ja) 2019-03-08 2022-06-24 株式会社堀場製作所 半導体レーザ装置、及び分析装置

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2542174C3 (de) * 1974-09-21 1980-02-14 Nippon Electric Co., Ltd., Tokio Halbleiterlaservorrichtung
JPS61258531A (ja) 1985-05-10 1986-11-15 Fujitsu Ltd 原子ビ−ム装置
JP2870082B2 (ja) * 1990-01-19 1999-03-10 ソニー株式会社 半導体レーザ
JPH0666689A (ja) 1991-01-23 1994-03-11 Iseki & Co Ltd 穀物乾燥調製施設における食味検査設備
JPH1187852A (ja) * 1997-09-03 1999-03-30 Matsushita Electric Ind Co Ltd 電子冷却器付半導体レーザモジュール
US6320472B1 (en) 1999-01-26 2001-11-20 Kernco, Inc. Atomic frequency standard
JP2001135886A (ja) * 1999-08-24 2001-05-18 Mitsui Chemicals Inc 半導体レーザ素子、半導体レーザモジュールおよびファイバーモジュール
JP2001168805A (ja) 1999-12-06 2001-06-22 Mitsubishi Electric Corp 光送信モジュール
JP2001257415A (ja) * 2000-03-13 2001-09-21 Sumitomo Metal Electronics Devices Inc 光半導体装置
JP4071917B2 (ja) * 2000-04-21 2008-04-02 ユーディナデバイス株式会社 光半導体装置
US6806784B2 (en) 2001-07-09 2004-10-19 The National Institute Of Standards And Technology Miniature frequency standard based on all-optical excitation and a micro-machined containment vessel
JP2003142740A (ja) * 2001-11-02 2003-05-16 Yamaha Corp 熱電装置
JP4113442B2 (ja) * 2002-05-09 2008-07-09 ローム株式会社 半導体レーザ、その製法および光ピックアップ装置
US7292111B2 (en) * 2004-04-26 2007-11-06 Northrop Grumman Corporation Middle layer of die structure that comprises a cavity that holds an alkali metal
DE602005027217D1 (de) 2004-07-13 2011-05-12 Draper Lab Charles S Vorrichtung zum aussetzen einer vorrichtung in chipgrösse und einem atomuhrensystem
JP4830141B2 (ja) 2006-05-31 2011-12-07 セイコーエプソン株式会社 原子発振器
JP2009059418A (ja) * 2007-08-31 2009-03-19 Pioneer Electronic Corp レーザダイオードの出力パワー制御装置、光ディスク装置およびレーザダイオードの出力パワー制御方法
JP2009064829A (ja) 2007-09-04 2009-03-26 Nec Corp 光送信モジュールおよび光送信装置
JP2009141048A (ja) 2007-12-05 2009-06-25 Epson Toyocom Corp 光学系及び原子発振器
JP5309567B2 (ja) 2008-01-07 2013-10-09 セイコーエプソン株式会社 原子発振器
JP5181815B2 (ja) * 2008-05-12 2013-04-10 セイコーエプソン株式会社 光学系及び原子発振器
US8475056B2 (en) * 2009-07-28 2013-07-02 Jds Uniphase Corporation Semiconductor device assembly

Also Published As

Publication number Publication date
JP2013162031A (ja) 2013-08-19
US20130200955A1 (en) 2013-08-08
US9007136B2 (en) 2015-04-14
CN103248362A (zh) 2013-08-14
CN103248362B (zh) 2016-06-22

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