JP2013162031A5 - - Google Patents

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Publication number
JP2013162031A5
JP2013162031A5 JP2012024160A JP2012024160A JP2013162031A5 JP 2013162031 A5 JP2013162031 A5 JP 2013162031A5 JP 2012024160 A JP2012024160 A JP 2012024160A JP 2012024160 A JP2012024160 A JP 2012024160A JP 2013162031 A5 JP2013162031 A5 JP 2013162031A5
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JP
Japan
Prior art keywords
temperature control
wiring
light emitting
control surface
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2012024160A
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English (en)
Japanese (ja)
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JP2013162031A (ja
JP6123977B2 (ja
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Publication date
Application filed filed Critical
Priority to JP2012024160A priority Critical patent/JP6123977B2/ja
Priority claimed from JP2012024160A external-priority patent/JP6123977B2/ja
Priority to CN201310046276.9A priority patent/CN103248362B/zh
Priority to US13/759,360 priority patent/US9007136B2/en
Publication of JP2013162031A publication Critical patent/JP2013162031A/ja
Publication of JP2013162031A5 publication Critical patent/JP2013162031A5/ja
Application granted granted Critical
Publication of JP6123977B2 publication Critical patent/JP6123977B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2012024160A 2012-02-07 2012-02-07 原子発振器 Active JP6123977B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012024160A JP6123977B2 (ja) 2012-02-07 2012-02-07 原子発振器
CN201310046276.9A CN103248362B (zh) 2012-02-07 2013-02-05 发光元件模块及原子振荡器
US13/759,360 US9007136B2 (en) 2012-02-07 2013-02-05 Light-emitting device module and atomic oscillator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012024160A JP6123977B2 (ja) 2012-02-07 2012-02-07 原子発振器

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2016256497A Division JP6365851B2 (ja) 2016-12-28 2016-12-28 発光素子モジュールおよび原子発振器

Publications (3)

Publication Number Publication Date
JP2013162031A JP2013162031A (ja) 2013-08-19
JP2013162031A5 true JP2013162031A5 (enExample) 2015-03-05
JP6123977B2 JP6123977B2 (ja) 2017-05-10

Family

ID=48902374

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012024160A Active JP6123977B2 (ja) 2012-02-07 2012-02-07 原子発振器

Country Status (3)

Country Link
US (1) US9007136B2 (enExample)
JP (1) JP6123977B2 (enExample)
CN (1) CN103248362B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6303481B2 (ja) 2013-12-20 2018-04-04 セイコーエプソン株式会社 発光素子モジュール、量子干渉装置、原子発振器、電子機器および移動体
CN104090482A (zh) * 2014-07-28 2014-10-08 北京无线电计量测试研究所 一种用于便携式原子钟的光学系统及其控制方法
JP2018041835A (ja) 2016-09-07 2018-03-15 セイコーエプソン株式会社 発光素子モジュール、原子発振器、電子機器および移動体
JP6597817B2 (ja) * 2018-03-08 2019-10-30 セイコーエプソン株式会社 発光素子モジュール、量子干渉装置、原子発振器、電子機器および移動体
JP2019175946A (ja) * 2018-03-27 2019-10-10 セイコーエプソン株式会社 原子発振器および周波数信号生成システム
JP2019175947A (ja) * 2018-03-27 2019-10-10 セイコーエプソン株式会社 原子発振器および周波数信号生成システム
JP7090572B2 (ja) 2019-03-08 2022-06-24 株式会社堀場製作所 半導体レーザ装置、及び分析装置

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GB1483849A (en) * 1974-09-21 1977-08-24 Nippon Electric Co Semiconductor laser device equipped with a silicon heat sink
JPS61258531A (ja) 1985-05-10 1986-11-15 Fujitsu Ltd 原子ビ−ム装置
JP2870082B2 (ja) * 1990-01-19 1999-03-10 ソニー株式会社 半導体レーザ
JPH0666689A (ja) 1991-01-23 1994-03-11 Iseki & Co Ltd 穀物乾燥調製施設における食味検査設備
JPH1187852A (ja) * 1997-09-03 1999-03-30 Matsushita Electric Ind Co Ltd 電子冷却器付半導体レーザモジュール
US6320472B1 (en) 1999-01-26 2001-11-20 Kernco, Inc. Atomic frequency standard
JP2001135886A (ja) * 1999-08-24 2001-05-18 Mitsui Chemicals Inc 半導体レーザ素子、半導体レーザモジュールおよびファイバーモジュール
JP2001168805A (ja) 1999-12-06 2001-06-22 Mitsubishi Electric Corp 光送信モジュール
JP2001257415A (ja) * 2000-03-13 2001-09-21 Sumitomo Metal Electronics Devices Inc 光半導体装置
JP4071917B2 (ja) * 2000-04-21 2008-04-02 ユーディナデバイス株式会社 光半導体装置
US6806784B2 (en) 2001-07-09 2004-10-19 The National Institute Of Standards And Technology Miniature frequency standard based on all-optical excitation and a micro-machined containment vessel
JP2003142740A (ja) * 2001-11-02 2003-05-16 Yamaha Corp 熱電装置
JP4113442B2 (ja) * 2002-05-09 2008-07-09 ローム株式会社 半導体レーザ、その製法および光ピックアップ装置
US7292111B2 (en) * 2004-04-26 2007-11-06 Northrop Grumman Corporation Middle layer of die structure that comprises a cavity that holds an alkali metal
WO2006017345A2 (en) 2004-07-13 2006-02-16 The Charles Stark Draper Laboratory, Inc. Apparatus for suspending a chip-scale device and atomic clock system
JP4830141B2 (ja) 2006-05-31 2011-12-07 セイコーエプソン株式会社 原子発振器
JP2009059418A (ja) * 2007-08-31 2009-03-19 Pioneer Electronic Corp レーザダイオードの出力パワー制御装置、光ディスク装置およびレーザダイオードの出力パワー制御方法
JP2009064829A (ja) 2007-09-04 2009-03-26 Nec Corp 光送信モジュールおよび光送信装置
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JP5309567B2 (ja) 2008-01-07 2013-10-09 セイコーエプソン株式会社 原子発振器
JP5181815B2 (ja) * 2008-05-12 2013-04-10 セイコーエプソン株式会社 光学系及び原子発振器
US8475056B2 (en) * 2009-07-28 2013-07-02 Jds Uniphase Corporation Semiconductor device assembly

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