JP6118502B2 - 安定した濃縮可能なケミカルメカニカル研磨組成物及びそれに関連する方法 - Google Patents

安定した濃縮可能なケミカルメカニカル研磨組成物及びそれに関連する方法 Download PDF

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Publication number
JP6118502B2
JP6118502B2 JP2012046433A JP2012046433A JP6118502B2 JP 6118502 B2 JP6118502 B2 JP 6118502B2 JP 2012046433 A JP2012046433 A JP 2012046433A JP 2012046433 A JP2012046433 A JP 2012046433A JP 6118502 B2 JP6118502 B2 JP 6118502B2
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JP
Japan
Prior art keywords
chemical mechanical
mechanical polishing
polishing composition
weight
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2012046433A
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English (en)
Japanese (ja)
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JP2012199532A (ja
JP2012199532A5 (enExample
Inventor
ハメド・ラクロー
ジンジエ・シー
ジョーセフ・レティツィア
シュ・リ
トーマス・エイチ・カランター
フランシス・ケリー
ジェイ・キース・ハリス
クリストファー・ジェイ・タッカー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Global Technologies LLC
DuPont Electronic Materials Holding Inc
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
Dow Global Technologies LLC
DuPont Electronic Materials Holding Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials CMP Holdings Inc, Dow Global Technologies LLC, DuPont Electronic Materials Holding Inc filed Critical Rohm and Haas Electronic Materials CMP Holdings Inc
Publication of JP2012199532A publication Critical patent/JP2012199532A/ja
Publication of JP2012199532A5 publication Critical patent/JP2012199532A5/ja
Application granted granted Critical
Publication of JP6118502B2 publication Critical patent/JP6118502B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/06—Other polishing compositions
    • C09G1/14—Other polishing compositions based on non-waxy substances
    • C09G1/16—Other polishing compositions based on non-waxy substances on natural or synthetic resins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2012046433A 2011-03-03 2012-03-02 安定した濃縮可能なケミカルメカニカル研磨組成物及びそれに関連する方法 Active JP6118502B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/039,723 2011-03-03
US13/039,723 US8435896B2 (en) 2011-03-03 2011-03-03 Stable, concentratable chemical mechanical polishing composition and methods relating thereto

Publications (3)

Publication Number Publication Date
JP2012199532A JP2012199532A (ja) 2012-10-18
JP2012199532A5 JP2012199532A5 (enExample) 2015-04-16
JP6118502B2 true JP6118502B2 (ja) 2017-04-19

Family

ID=46671508

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012046433A Active JP6118502B2 (ja) 2011-03-03 2012-03-02 安定した濃縮可能なケミカルメカニカル研磨組成物及びそれに関連する方法

Country Status (7)

Country Link
US (1) US8435896B2 (enExample)
JP (1) JP6118502B2 (enExample)
KR (1) KR101829635B1 (enExample)
CN (1) CN102702979B (enExample)
DE (1) DE102012004220A1 (enExample)
FR (1) FR2972196B1 (enExample)
TW (1) TWI609072B (enExample)

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US8609541B2 (en) * 2007-07-05 2013-12-17 Hitachi Chemical Co., Ltd. Polishing slurry for metal films and polishing method
JP2012146976A (ja) * 2010-12-24 2012-08-02 Hitachi Chem Co Ltd 研磨液及びこの研磨液を用いた基板の研磨方法
JP6198740B2 (ja) * 2012-09-18 2017-09-20 株式会社フジミインコーポレーテッド 研磨用組成物
JP6549927B2 (ja) * 2015-07-24 2019-07-24 株式会社ディスコ ホウ素化合物を添加した切削砥石
WO2018168206A1 (ja) * 2017-03-14 2018-09-20 株式会社フジミインコーポレーテッド 研磨用組成物、その製造方法ならびにこれを用いた研磨方法および基板の製造方法
KR102611598B1 (ko) * 2017-04-27 2023-12-08 주식회사 동진쎄미켐 화학-기계적 연마용 슬러리 조성물
EP3631045A4 (en) * 2017-05-25 2021-01-27 Fujifilm Electronic Materials U.S.A., Inc. CHEMICAL-MECHANICAL POLISHING SLUDGE FOR COBALT APPLICATIONS
WO2020091242A1 (ko) * 2018-10-31 2020-05-07 영창케미칼 주식회사 구리 배리어층 연마용 슬러리 조성물
CN113242890A (zh) * 2018-12-12 2021-08-10 巴斯夫欧洲公司 含有铜和钌的基材的化学机械抛光
CN114686116A (zh) * 2020-12-30 2022-07-01 安集微电子科技（上海）股份有限公司 化学机械抛光液及其使用方法
CN112920716A (zh) * 2021-01-26 2021-06-08 中国科学院上海微系统与信息技术研究所 一种用于氮化钛化学机械抛光的组合物及其使用方法
CN115926629B (zh) * 2022-12-30 2023-12-05 昂士特科技(深圳)有限公司 具有改进再循环性能的化学机械抛光组合物
LU103163B1 (en) * 2023-06-30 2024-12-30 Sampochem Gmbh High-density, sub-zero stable clear liquid composition and the method for producing thereof

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SG99289A1 (en) 1998-10-23 2003-10-27 Ibm Chemical-mechanical planarization of metallurgy
US6375693B1 (en) 1999-05-07 2002-04-23 International Business Machines Corporation Chemical-mechanical planarization of barriers or liners for copper metallurgy
JP3551238B2 (ja) * 1999-09-07 2004-08-04 三菱住友シリコン株式会社 シリコンウェーハの研磨液及びこれを用いた研磨方法
JP3525824B2 (ja) * 1999-09-17 2004-05-10 日立化成工業株式会社 Ｃｍｐ研磨液
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US6632259B2 (en) 2001-05-18 2003-10-14 Rodel Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
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US7427361B2 (en) * 2003-10-10 2008-09-23 Dupont Air Products Nanomaterials Llc Particulate or particle-bound chelating agents
KR100599327B1 (ko) * 2004-03-12 2006-07-19 주식회사 케이씨텍 Ｃｍｐ용 슬러리 및 그의 제조법
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US8440097B2 (en) * 2011-03-03 2013-05-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stable, concentratable, water soluble cellulose free chemical mechanical polishing composition

Also Published As

Publication number Publication date
CN102702979A (zh) 2012-10-03
CN102702979B (zh) 2014-12-03
US20120225555A1 (en) 2012-09-06
DE102012004220A1 (de) 2012-09-06
FR2972196B1 (fr) 2017-05-19
FR2972196A1 (fr) 2012-09-07
JP2012199532A (ja) 2012-10-18
US8435896B2 (en) 2013-05-07
TWI609072B (zh) 2017-12-21
TW201249973A (en) 2012-12-16
KR20120101308A (ko) 2012-09-13
KR101829635B1 (ko) 2018-03-29

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