TWI609072B - 安定可濃縮化學機械研磨組成物及其相關方法 - Google Patents

安定可濃縮化學機械研磨組成物及其相關方法 Download PDF

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Publication number
TWI609072B
TWI609072B TW101106931A TW101106931A TWI609072B TW I609072 B TWI609072 B TW I609072B TW 101106931 A TW101106931 A TW 101106931A TW 101106931 A TW101106931 A TW 101106931A TW I609072 B TWI609072 B TW I609072B
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TW
Taiwan
Prior art keywords
mechanical polishing
chemical mechanical
water
polishing composition
soluble
Prior art date
Application number
TW101106931A
Other languages
English (en)
Chinese (zh)
Other versions
TW201249973A (en
Inventor
哈麥德 拉羅特
石進杰
約瑟 雷特亞
林巫
湯瑪士Ｈ 卡安塔
法蘭絲 凱莉
Ｊ 凱曲 海瑞斯
克里斯多佛Ｊ 塔克
Original Assignee
羅門哈斯電子材料Ｃｍｐ控股公司
陶氏全球科技責任有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 羅門哈斯電子材料Ｃｍｐ控股公司, 陶氏全球科技責任有限公司 filed Critical 羅門哈斯電子材料Ｃｍｐ控股公司
Publication of TW201249973A publication Critical patent/TW201249973A/zh
Application granted granted Critical
Publication of TWI609072B publication Critical patent/TWI609072B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/06—Other polishing compositions
    • C09G1/14—Other polishing compositions based on non-waxy substances
    • C09G1/16—Other polishing compositions based on non-waxy substances on natural or synthetic resins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
TW101106931A 2011-03-03 2012-03-02 安定可濃縮化學機械研磨組成物及其相關方法 TWI609072B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/039,723 US8435896B2 (en) 2011-03-03 2011-03-03 Stable, concentratable chemical mechanical polishing composition and methods relating thereto

Publications (2)

Publication Number Publication Date
TW201249973A TW201249973A (en) 2012-12-16
TWI609072B true TWI609072B (zh) 2017-12-21

Family

ID=46671508

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101106931A TWI609072B (zh) 2011-03-03 2012-03-02 安定可濃縮化學機械研磨組成物及其相關方法

Country Status (7)

Country Link
US (1) US8435896B2 (enExample)
JP (1) JP6118502B2 (enExample)
KR (1) KR101829635B1 (enExample)
CN (1) CN102702979B (enExample)
DE (1) DE102012004220A1 (enExample)
FR (1) FR2972196B1 (enExample)
TW (1) TWI609072B (enExample)

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US8609541B2 (en) * 2007-07-05 2013-12-17 Hitachi Chemical Co., Ltd. Polishing slurry for metal films and polishing method
JP2012146976A (ja) * 2010-12-24 2012-08-02 Hitachi Chem Co Ltd 研磨液及びこの研磨液を用いた基板の研磨方法
JP6198740B2 (ja) * 2012-09-18 2017-09-20 株式会社フジミインコーポレーテッド 研磨用組成物
JP6549927B2 (ja) * 2015-07-24 2019-07-24 株式会社ディスコ ホウ素化合物を添加した切削砥石
WO2018168206A1 (ja) * 2017-03-14 2018-09-20 株式会社フジミインコーポレーテッド 研磨用組成物、その製造方法ならびにこれを用いた研磨方法および基板の製造方法
KR102611598B1 (ko) * 2017-04-27 2023-12-08 주식회사 동진쎄미켐 화학-기계적 연마용 슬러리 조성물
EP3631045A4 (en) * 2017-05-25 2021-01-27 Fujifilm Electronic Materials U.S.A., Inc. CHEMICAL-MECHANICAL POLISHING SLUDGE FOR COBALT APPLICATIONS
WO2020091242A1 (ko) * 2018-10-31 2020-05-07 영창케미칼 주식회사 구리 배리어층 연마용 슬러리 조성물
CN113242890A (zh) * 2018-12-12 2021-08-10 巴斯夫欧洲公司 含有铜和钌的基材的化学机械抛光
CN114686116A (zh) * 2020-12-30 2022-07-01 安集微电子科技（上海）股份有限公司 化学机械抛光液及其使用方法
CN112920716A (zh) * 2021-01-26 2021-06-08 中国科学院上海微系统与信息技术研究所 一种用于氮化钛化学机械抛光的组合物及其使用方法
CN115926629B (zh) * 2022-12-30 2023-12-05 昂士特科技(深圳)有限公司 具有改进再循环性能的化学机械抛光组合物
LU103163B1 (en) * 2023-06-30 2024-12-30 Sampochem Gmbh High-density, sub-zero stable clear liquid composition and the method for producing thereof

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TW200938603A (en) * 2008-02-22 2009-09-16 Rohm & Haas Elect Mat Low-stain polishing composition

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TW200938603A (en) * 2008-02-22 2009-09-16 Rohm & Haas Elect Mat Low-stain polishing composition

Also Published As

Publication number Publication date
CN102702979A (zh) 2012-10-03
CN102702979B (zh) 2014-12-03
US20120225555A1 (en) 2012-09-06
DE102012004220A1 (de) 2012-09-06
FR2972196B1 (fr) 2017-05-19
FR2972196A1 (fr) 2012-09-07
JP2012199532A (ja) 2012-10-18
US8435896B2 (en) 2013-05-07
JP6118502B2 (ja) 2017-04-19
TW201249973A (en) 2012-12-16
KR20120101308A (ko) 2012-09-13
KR101829635B1 (ko) 2018-03-29

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