FR2972196B1 - Composition de polissage chimico-mecanique, concentrable, stable et procede s'y rattachant - Google Patents

Composition de polissage chimico-mecanique, concentrable, stable et procede s'y rattachant

Info

Publication number
FR2972196B1
FR2972196B1 FR1251978A FR1251978A FR2972196B1 FR 2972196 B1 FR2972196 B1 FR 2972196B1 FR 1251978 A FR1251978 A FR 1251978A FR 1251978 A FR1251978 A FR 1251978A FR 2972196 B1 FR2972196 B1 FR 2972196B1
Authority
FR
France
Prior art keywords
concentrable
chemical mechanical
polishing composition
method relating
stable polishing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1251978A
Other languages
English (en)
Other versions
FR2972196A1 (fr
Inventor
Hamed Lakrout
Jinjie Shi
Joseph Letizia
Xu Li
Thomas H Kalantar
Francis Kelley
Keith J Harris
Christopher J Tucker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm and Haas Electronic Materials CMP Holdings Inc
Dow Global Technologies LLC
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
Dow Global Technologies LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials CMP Holdings Inc, Dow Global Technologies LLC filed Critical Rohm and Haas Electronic Materials CMP Holdings Inc
Publication of FR2972196A1 publication Critical patent/FR2972196A1/fr
Application granted granted Critical
Publication of FR2972196B1 publication Critical patent/FR2972196B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/06—Other polishing compositions
    • C09G1/14—Other polishing compositions based on non-waxy substances
    • C09G1/16—Other polishing compositions based on non-waxy substances on natural or synthetic resins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
FR1251978A 2011-03-03 2012-03-05 Composition de polissage chimico-mecanique, concentrable, stable et procede s'y rattachant Expired - Fee Related FR2972196B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/039,723 US8435896B2 (en) 2011-03-03 2011-03-03 Stable, concentratable chemical mechanical polishing composition and methods relating thereto

Publications (2)

Publication Number Publication Date
FR2972196A1 FR2972196A1 (fr) 2012-09-07
FR2972196B1 true FR2972196B1 (fr) 2017-05-19

Family

ID=46671508

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1251978A Expired - Fee Related FR2972196B1 (fr) 2011-03-03 2012-03-05 Composition de polissage chimico-mecanique, concentrable, stable et procede s'y rattachant

Country Status (7)

Country Link
US (1) US8435896B2 (fr)
JP (1) JP6118502B2 (fr)
KR (1) KR101829635B1 (fr)
CN (1) CN102702979B (fr)
DE (1) DE102012004220A1 (fr)
FR (1) FR2972196B1 (fr)
TW (1) TWI609072B (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102352187B (zh) * 2007-07-05 2015-03-18 日立化成株式会社 金属膜用研磨液及研磨方法
KR101886464B1 (ko) * 2010-12-24 2018-08-07 히타치가세이가부시끼가이샤 연마액 및 이 연마액을 이용한 기판의 연마 방법
JP6198740B2 (ja) * 2012-09-18 2017-09-20 株式会社フジミインコーポレーテッド 研磨用組成物
JP6549927B2 (ja) * 2015-07-24 2019-07-24 株式会社ディスコ ホウ素化合物を添加した切削砥石
WO2018168206A1 (fr) * 2017-03-14 2018-09-20 株式会社フジミインコーポレーテッド Composition pour polissage ainsi que procédé de fabrication de celle-ci, procédé de polissage mettant en œuvre cette composition, et procédé de fabrication de substrat
KR102611598B1 (ko) * 2017-04-27 2023-12-08 주식회사 동진쎄미켐 화학-기계적 연마용 슬러리 조성물
WO2020091242A1 (fr) * 2018-10-31 2020-05-07 영창케미칼 주식회사 Composition en suspension pour le polissage d'une couche barrière en cuivre
EP3894496A1 (fr) * 2018-12-12 2021-10-20 Basf Se Polissage mécano-chimique de substrats contenant du cuivre et du ruthénium
CN112920716A (zh) * 2021-01-26 2021-06-08 中国科学院上海微系统与信息技术研究所 一种用于氮化钛化学机械抛光的组合物及其使用方法
CN115926629B (zh) * 2022-12-30 2023-12-05 昂士特科技(深圳)有限公司 具有改进再循环性能的化学机械抛光组合物

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DE2531431C3 (de) * 1975-07-14 1979-03-01 Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen Poliermittel zur Herstellung schleierfreier Halbleiteroberflächen
SG99289A1 (en) 1998-10-23 2003-10-27 Ibm Chemical-mechanical planarization of metallurgy
US6375693B1 (en) 1999-05-07 2002-04-23 International Business Machines Corporation Chemical-mechanical planarization of barriers or liners for copper metallurgy
JP3551238B2 (ja) * 1999-09-07 2004-08-04 三菱住友シリコン株式会社 シリコンウェーハの研磨液及びこれを用いた研磨方法
JP3525824B2 (ja) * 1999-09-17 2004-05-10 日立化成工業株式会社 Ｃｍｐ研磨液
US6679928B2 (en) 2001-04-12 2004-01-20 Rodel Holdings, Inc. Polishing composition having a surfactant
US6632259B2 (en) 2001-05-18 2003-10-14 Rodel Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
US6821897B2 (en) * 2001-12-05 2004-11-23 Cabot Microelectronics Corporation Method for copper CMP using polymeric complexing agents
US6776810B1 (en) * 2002-02-11 2004-08-17 Cabot Microelectronics Corporation Anionic abrasive particles treated with positively charged polyelectrolytes for CMP
US7427361B2 (en) * 2003-10-10 2008-09-23 Dupont Air Products Nanomaterials Llc Particulate or particle-bound chelating agents
CN1667026B (zh) * 2004-03-12 2011-11-30 K.C.科技股份有限公司 抛光浆料及其制备方法和基板的抛光方法
KR100599327B1 (ko) * 2004-03-12 2006-07-19 주식회사 케이씨텍 Ｃｍｐ용 슬러리 및 그의 제조법
JP2005285944A (ja) * 2004-03-29 2005-10-13 Hitachi Chem Co Ltd 金属用研磨液及び研磨方法
JP4641155B2 (ja) * 2004-06-03 2011-03-02 株式会社日本触媒 化学機械研磨用の研磨剤
US7384871B2 (en) 2004-07-01 2008-06-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
US20060000808A1 (en) * 2004-07-01 2006-01-05 Fuji Photo Film Co., Ltd. Polishing solution of metal and chemical mechanical polishing method
US7303993B2 (en) 2004-07-01 2007-12-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
US7086935B2 (en) 2004-11-24 2006-08-08 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cellulose-containing polishing compositions and methods relating thereto
JP4390757B2 (ja) * 2005-08-30 2009-12-24 花王株式会社 研磨液組成物
US7824568B2 (en) 2006-08-17 2010-11-02 International Business Machines Corporation Solution for forming polishing slurry, polishing slurry and related methods
JP2008091411A (ja) * 2006-09-29 2008-04-17 Fujifilm Corp 金属用研磨液
US20090215266A1 (en) * 2008-02-22 2009-08-27 Thomas Terence M Polishing Copper-Containing patterned wafers
US9633865B2 (en) * 2008-02-22 2017-04-25 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Low-stain polishing composition
JP4521058B2 (ja) * 2008-03-24 2010-08-11 株式会社Ａｄｅｋａ 表面改質コロイダルシリカおよびこれを含有するｃｍｐ用研磨組成物
US8540893B2 (en) 2008-08-04 2013-09-24 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto
US8440097B2 (en) * 2011-03-03 2013-05-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stable, concentratable, water soluble cellulose free chemical mechanical polishing composition

Also Published As

Publication number Publication date
TW201249973A (en) 2012-12-16
KR20120101308A (ko) 2012-09-13
DE102012004220A1 (de) 2012-09-06
CN102702979A (zh) 2012-10-03
JP2012199532A (ja) 2012-10-18
TWI609072B (zh) 2017-12-21
JP6118502B2 (ja) 2017-04-19
FR2972196A1 (fr) 2012-09-07
KR101829635B1 (ko) 2018-03-29
US20120225555A1 (en) 2012-09-06
CN102702979B (zh) 2014-12-03
US8435896B2 (en) 2013-05-07

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