CN102702979B - 稳定的、可浓缩的化学机械抛光组合物及其涉及的方法 - Google Patents

稳定的、可浓缩的化学机械抛光组合物及其涉及的方法 Download PDF

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Publication number
CN102702979B
CN102702979B CN201210126850.7A CN201210126850A CN102702979B CN 102702979 B CN102702979 B CN 102702979B CN 201210126850 A CN201210126850 A CN 201210126850A CN 102702979 B CN102702979 B CN 102702979B
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CN
China
Prior art keywords
mechanical polishing
weight
chemical mechanical
chemical
water
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201210126850.7A
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English (en)
Chinese (zh)
Other versions
CN102702979A (zh
Inventor
H·拉克奥特
石进杰
J·莱蒂齐亚
X·李
T·H·卡兰塔尔
F·凯勒
J·K·哈里斯
C·J·塔克
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ROHM AND HAAS ELECTRONIC MATER
Dow Global Technologies LLC
Original Assignee
ROHM AND HAAS ELECTRONIC MATER
Dow Global Technologies LLC
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Publication of CN102702979A publication Critical patent/CN102702979A/zh
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Publication of CN102702979B publication Critical patent/CN102702979B/zh
Expired - Fee Related legal-status Critical Current
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/06—Other polishing compositions
    • C09G1/14—Other polishing compositions based on non-waxy substances
    • C09G1/16—Other polishing compositions based on non-waxy substances on natural or synthetic resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN201210126850.7A 2011-03-03 2012-03-02 稳定的、可浓缩的化学机械抛光组合物及其涉及的方法 Expired - Fee Related CN102702979B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/039,723 US8435896B2 (en) 2011-03-03 2011-03-03 Stable, concentratable chemical mechanical polishing composition and methods relating thereto
US13/039,723 2011-03-03

Publications (2)

Publication Number Publication Date
CN102702979A CN102702979A (zh) 2012-10-03
CN102702979B true CN102702979B (zh) 2014-12-03

Family

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Family Applications (1)

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CN201210126850.7A Expired - Fee Related CN102702979B (zh) 2011-03-03 2012-03-02 稳定的、可浓缩的化学机械抛光组合物及其涉及的方法

Country Status (7)

Country Link
US (1) US8435896B2 (enExample)
JP (1) JP6118502B2 (enExample)
KR (1) KR101829635B1 (enExample)
CN (1) CN102702979B (enExample)
DE (1) DE102012004220A1 (enExample)
FR (1) FR2972196B1 (enExample)
TW (1) TWI609072B (enExample)

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TWI419218B (zh) * 2007-07-05 2013-12-11 日立化成工業股份有限公司 金屬膜用研磨液以及研磨方法
JP5333571B2 (ja) * 2010-12-24 2013-11-06 日立化成株式会社 研磨液及びこの研磨液を用いた基板の研磨方法
JP6198740B2 (ja) * 2012-09-18 2017-09-20 株式会社フジミインコーポレーテッド 研磨用組成物
JP6549927B2 (ja) * 2015-07-24 2019-07-24 株式会社ディスコ ホウ素化合物を添加した切削砥石
US11643573B2 (en) 2017-03-14 2023-05-09 Fujimi Incorporated Polishing composition, production method therefor, and polishing method and production method for substrate, using polishing composition
KR102611598B1 (ko) * 2017-04-27 2023-12-08 주식회사 동진쎄미켐 화학-기계적 연마용 슬러리 조성물
EP3631045B1 (en) * 2017-05-25 2026-02-18 Fujifilm Electronic Materials U.S.A., Inc. Chemical mechanical polishing slurry for cobalt applications
WO2020091242A1 (ko) * 2018-10-31 2020-05-07 영창케미칼 주식회사 구리 배리어층 연마용 슬러리 조성물
KR102871615B1 (ko) * 2018-12-12 2025-10-15 바스프 에스이 구리 및 루테늄을 함유하는 기판의 화학적 기계적 폴리싱
CN114686116A (zh) * 2020-12-30 2022-07-01 安集微电子科技（上海）股份有限公司 化学机械抛光液及其使用方法
CN112920716A (zh) * 2021-01-26 2021-06-08 中国科学院上海微系统与信息技术研究所 一种用于氮化钛化学机械抛光的组合物及其使用方法
CN115926629B (zh) * 2022-12-30 2023-12-05 昂士特科技(深圳)有限公司 具有改进再循环性能的化学机械抛光组合物
LU103163B1 (en) * 2023-06-30 2024-12-30 Sampochem Gmbh High-density, sub-zero stable clear liquid composition and the method for producing thereof

Citations (9)

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GB1499490A (en) * 1975-07-14 1978-02-01 Wacker Chemitronic Polishing semi-conductor surfaces
JP2001085373A (ja) * 1999-09-17 2001-03-30 Hitachi Chem Co Ltd Ｃｍｐ研磨液
CN1667026A (zh) * 2004-03-12 2005-09-14 K.C科技股份有限公司 抛光浆料及其制备方法和基板的抛光方法
JP2005285944A (ja) * 2004-03-29 2005-10-13 Hitachi Chem Co Ltd 金属用研磨液及び研磨方法
US7086935B2 (en) * 2004-11-24 2006-08-08 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cellulose-containing polishing compositions and methods relating thereto
CN1923943A (zh) * 2005-08-30 2007-03-07 花王株式会社 研磨液组合物
CN1944496A (zh) * 2004-03-12 2007-04-11 K.C.科技股份有限公司 抛光浆料及其制备方法和基板的抛光方法
CN101515546A (zh) * 2008-02-22 2009-08-26 罗门哈斯电子材料Cmp控股股份有限公司 抛光含铜的图案化晶片
CN101525522A (zh) * 2008-02-22 2009-09-09 罗门哈斯电子材料Cmp控股股份有限公司 低污染抛光组合物

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JP4641155B2 (ja) * 2004-06-03 2011-03-02 株式会社日本触媒 化学機械研磨用の研磨剤
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1499490A (en) * 1975-07-14 1978-02-01 Wacker Chemitronic Polishing semi-conductor surfaces
JP2001085373A (ja) * 1999-09-17 2001-03-30 Hitachi Chem Co Ltd Ｃｍｐ研磨液
CN1667026A (zh) * 2004-03-12 2005-09-14 K.C科技股份有限公司 抛光浆料及其制备方法和基板的抛光方法
CN1944496A (zh) * 2004-03-12 2007-04-11 K.C.科技股份有限公司 抛光浆料及其制备方法和基板的抛光方法
JP2005285944A (ja) * 2004-03-29 2005-10-13 Hitachi Chem Co Ltd 金属用研磨液及び研磨方法
US7086935B2 (en) * 2004-11-24 2006-08-08 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cellulose-containing polishing compositions and methods relating thereto
CN1923943A (zh) * 2005-08-30 2007-03-07 花王株式会社 研磨液组合物
CN101515546A (zh) * 2008-02-22 2009-08-26 罗门哈斯电子材料Cmp控股股份有限公司 抛光含铜的图案化晶片
CN101525522A (zh) * 2008-02-22 2009-09-09 罗门哈斯电子材料Cmp控股股份有限公司 低污染抛光组合物

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周新木等.高铈抛光粉表面电性及悬浮液分散稳定性研究.《稀土》.2007,(第01期), *
高铈抛光粉表面电性及悬浮液分散稳定性研究;周新木等;《稀土》;20070225(第01期);12-16 *

Also Published As

Publication number Publication date
DE102012004220A1 (de) 2012-09-06
KR20120101308A (ko) 2012-09-13
KR101829635B1 (ko) 2018-03-29
FR2972196B1 (fr) 2017-05-19
FR2972196A1 (fr) 2012-09-07
CN102702979A (zh) 2012-10-03
US8435896B2 (en) 2013-05-07
US20120225555A1 (en) 2012-09-06
TW201249973A (en) 2012-12-16
TWI609072B (zh) 2017-12-21
JP6118502B2 (ja) 2017-04-19
JP2012199532A (ja) 2012-10-18

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