CN102702979B - 稳定的、可浓缩的化学机械抛光组合物及其涉及的方法 - Google Patents

稳定的、可浓缩的化学机械抛光组合物及其涉及的方法 Download PDF

Info

Publication number
CN102702979B
CN102702979B CN201210126850.7A CN201210126850A CN102702979B CN 102702979 B CN102702979 B CN 102702979B CN 201210126850 A CN201210126850 A CN 201210126850A CN 102702979 B CN102702979 B CN 102702979B
Authority
CN
China
Prior art keywords
chemical mechanical
mechanical polishing
water
weight
polishing composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201210126850.7A
Other languages
English (en)
Chinese (zh)
Other versions
CN102702979A (zh
Inventor
H·拉克奥特
石进杰
J·莱蒂齐亚
X·李
T·H·卡兰塔尔
F·凯勒
J·K·哈里斯
C·J·塔克
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ROHM AND HAAS ELECTRONIC MATER
Dow Global Technologies LLC
Original Assignee
ROHM AND HAAS ELECTRONIC MATER
Dow Global Technologies LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ROHM AND HAAS ELECTRONIC MATER, Dow Global Technologies LLC filed Critical ROHM AND HAAS ELECTRONIC MATER
Publication of CN102702979A publication Critical patent/CN102702979A/zh
Application granted granted Critical
Publication of CN102702979B publication Critical patent/CN102702979B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/06—Other polishing compositions
    • C09G1/14—Other polishing compositions based on non-waxy substances
    • C09G1/16—Other polishing compositions based on non-waxy substances on natural or synthetic resins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN201210126850.7A 2011-03-03 2012-03-02 稳定的、可浓缩的化学机械抛光组合物及其涉及的方法 Expired - Fee Related CN102702979B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/039,723 US8435896B2 (en) 2011-03-03 2011-03-03 Stable, concentratable chemical mechanical polishing composition and methods relating thereto
US13/039,723 2011-03-03

Publications (2)

Publication Number Publication Date
CN102702979A CN102702979A (zh) 2012-10-03
CN102702979B true CN102702979B (zh) 2014-12-03

Family

ID=46671508

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210126850.7A Expired - Fee Related CN102702979B (zh) 2011-03-03 2012-03-02 稳定的、可浓缩的化学机械抛光组合物及其涉及的方法

Country Status (7)

Country Link
US (1) US8435896B2 (enExample)
JP (1) JP6118502B2 (enExample)
KR (1) KR101829635B1 (enExample)
CN (1) CN102702979B (enExample)
DE (1) DE102012004220A1 (enExample)
FR (1) FR2972196B1 (enExample)
TW (1) TWI609072B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009005143A1 (ja) * 2007-07-05 2009-01-08 Hitachi Chemical Co., Ltd. 金属膜用研磨液及び研磨方法
JP2012146973A (ja) * 2010-12-24 2012-08-02 Hitachi Chem Co Ltd 研磨液及びこの研磨液を用いた基板の研磨方法
WO2014045937A1 (ja) * 2012-09-18 2014-03-27 株式会社フジミインコーポレーテッド 研磨用組成物
JP6549927B2 (ja) * 2015-07-24 2019-07-24 株式会社ディスコ ホウ素化合物を添加した切削砥石
KR102649676B1 (ko) * 2017-03-14 2024-03-21 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물, 그 제조 방법, 그리고 이것을 사용한 연마 방법 및 기판의 제조 방법
KR102611598B1 (ko) * 2017-04-27 2023-12-08 주식회사 동진쎄미켐 화학-기계적 연마용 슬러리 조성물
KR102324957B1 (ko) * 2017-05-25 2021-11-15 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 코발트 적용을 위한 화학 기계 연마 슬러리
WO2020091242A1 (ko) * 2018-10-31 2020-05-07 영창케미칼 주식회사 구리 배리어층 연마용 슬러리 조성물
KR102871615B1 (ko) * 2018-12-12 2025-10-15 바스프 에스이 구리 및 루테늄을 함유하는 기판의 화학적 기계적 폴리싱
CN114686116A (zh) * 2020-12-30 2022-07-01 安集微电子科技（上海）股份有限公司 化学机械抛光液及其使用方法
CN112920716A (zh) * 2021-01-26 2021-06-08 中国科学院上海微系统与信息技术研究所 一种用于氮化钛化学机械抛光的组合物及其使用方法
CN115926629B (zh) * 2022-12-30 2023-12-05 昂士特科技(深圳)有限公司 具有改进再循环性能的化学机械抛光组合物
LU103163B1 (en) * 2023-06-30 2024-12-30 Sampochem Gmbh High-density, sub-zero stable clear liquid composition and the method for producing thereof

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1499490A (en) * 1975-07-14 1978-02-01 Wacker Chemitronic Polishing semi-conductor surfaces
JP2001085373A (ja) * 1999-09-17 2001-03-30 Hitachi Chem Co Ltd Ｃｍｐ研磨液
CN1667026A (zh) * 2004-03-12 2005-09-14 K.C科技股份有限公司 抛光浆料及其制备方法和基板的抛光方法
JP2005285944A (ja) * 2004-03-29 2005-10-13 Hitachi Chem Co Ltd 金属用研磨液及び研磨方法
US7086935B2 (en) * 2004-11-24 2006-08-08 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cellulose-containing polishing compositions and methods relating thereto
CN1923943A (zh) * 2005-08-30 2007-03-07 花王株式会社 研磨液组合物
CN1944496A (zh) * 2004-03-12 2007-04-11 K.C.科技股份有限公司 抛光浆料及其制备方法和基板的抛光方法
CN101515546A (zh) * 2008-02-22 2009-08-26 罗门哈斯电子材料Cmp控股股份有限公司 抛光含铜的图案化晶片
CN101525522A (zh) * 2008-02-22 2009-09-09 罗门哈斯电子材料Cmp控股股份有限公司 低污染抛光组合物

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG99289A1 (en) 1998-10-23 2003-10-27 Ibm Chemical-mechanical planarization of metallurgy
US6375693B1 (en) 1999-05-07 2002-04-23 International Business Machines Corporation Chemical-mechanical planarization of barriers or liners for copper metallurgy
JP3551238B2 (ja) * 1999-09-07 2004-08-04 三菱住友シリコン株式会社 シリコンウェーハの研磨液及びこれを用いた研磨方法
TW584658B (en) 2001-04-12 2004-04-21 Rodel Inc Polishing composition having a surfactant
US6632259B2 (en) 2001-05-18 2003-10-14 Rodel Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
US6821897B2 (en) * 2001-12-05 2004-11-23 Cabot Microelectronics Corporation Method for copper CMP using polymeric complexing agents
US6776810B1 (en) * 2002-02-11 2004-08-17 Cabot Microelectronics Corporation Anionic abrasive particles treated with positively charged polyelectrolytes for CMP
US7427361B2 (en) * 2003-10-10 2008-09-23 Dupont Air Products Nanomaterials Llc Particulate or particle-bound chelating agents
JP4641155B2 (ja) * 2004-06-03 2011-03-02 株式会社日本触媒 化学機械研磨用の研磨剤
US7303993B2 (en) 2004-07-01 2007-12-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
US20060000808A1 (en) * 2004-07-01 2006-01-05 Fuji Photo Film Co., Ltd. Polishing solution of metal and chemical mechanical polishing method
US7384871B2 (en) 2004-07-01 2008-06-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
US7824568B2 (en) 2006-08-17 2010-11-02 International Business Machines Corporation Solution for forming polishing slurry, polishing slurry and related methods
JP2008091411A (ja) * 2006-09-29 2008-04-17 Fujifilm Corp 金属用研磨液
JP4521058B2 (ja) * 2008-03-24 2010-08-11 株式会社Adeka 表面改質コロイダルシリカおよびこれを含有するｃｍｐ用研磨組成物
US8540893B2 (en) 2008-08-04 2013-09-24 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto
US8440097B2 (en) * 2011-03-03 2013-05-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stable, concentratable, water soluble cellulose free chemical mechanical polishing composition

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1499490A (en) * 1975-07-14 1978-02-01 Wacker Chemitronic Polishing semi-conductor surfaces
JP2001085373A (ja) * 1999-09-17 2001-03-30 Hitachi Chem Co Ltd Ｃｍｐ研磨液
CN1667026A (zh) * 2004-03-12 2005-09-14 K.C科技股份有限公司 抛光浆料及其制备方法和基板的抛光方法
CN1944496A (zh) * 2004-03-12 2007-04-11 K.C.科技股份有限公司 抛光浆料及其制备方法和基板的抛光方法
JP2005285944A (ja) * 2004-03-29 2005-10-13 Hitachi Chem Co Ltd 金属用研磨液及び研磨方法
US7086935B2 (en) * 2004-11-24 2006-08-08 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cellulose-containing polishing compositions and methods relating thereto
CN1923943A (zh) * 2005-08-30 2007-03-07 花王株式会社 研磨液组合物
CN101515546A (zh) * 2008-02-22 2009-08-26 罗门哈斯电子材料Cmp控股股份有限公司 抛光含铜的图案化晶片
CN101525522A (zh) * 2008-02-22 2009-09-09 罗门哈斯电子材料Cmp控股股份有限公司 低污染抛光组合物

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
周新木等.高铈抛光粉表面电性及悬浮液分散稳定性研究.《稀土》.2007,(第01期), *
高铈抛光粉表面电性及悬浮液分散稳定性研究;周新木等;《稀土》;20070225(第01期);12-16 *

Also Published As

Publication number Publication date
JP6118502B2 (ja) 2017-04-19
JP2012199532A (ja) 2012-10-18
DE102012004220A1 (de) 2012-09-06
KR20120101308A (ko) 2012-09-13
KR101829635B1 (ko) 2018-03-29
US8435896B2 (en) 2013-05-07
TW201249973A (en) 2012-12-16
FR2972196B1 (fr) 2017-05-19
FR2972196A1 (fr) 2012-09-07
TWI609072B (zh) 2017-12-21
CN102702979A (zh) 2012-10-03
US20120225555A1 (en) 2012-09-06

Similar Documents

Publication Publication Date Title
CN102702979B (zh) 稳定的、可浓缩的化学机械抛光组合物及其涉及的方法
CN102690609B (zh) 稳定的、可浓缩并且无水溶性纤维素的化学机械抛光组合物
JP5543148B2 (ja) ケミカルメカニカル研磨組成物及びそれに関連する方法
KR101560647B1 (ko) 저-스테인 연마 조성물
KR101560648B1 (ko) 구리를 포함하는 패턴화된 웨이퍼의 연마
TW202014487A (zh) 阻絕物漿移除速率改良
US7086935B2 (en) Cellulose-containing polishing compositions and methods relating thereto
CN102031065B (zh) 无磨料的化学机械抛光组合物

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20141203

Termination date: 20210302

CF01 Termination of patent right due to non-payment of annual fee