JP6110492B2 - 透明導電性薄膜形成用コア―シェルナノ粒子、及びこれを使用した透明導電性薄膜の製造方法 - Google Patents
透明導電性薄膜形成用コア―シェルナノ粒子、及びこれを使用した透明導電性薄膜の製造方法 Download PDFInfo
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- JP6110492B2 JP6110492B2 JP2015527415A JP2015527415A JP6110492B2 JP 6110492 B2 JP6110492 B2 JP 6110492B2 JP 2015527415 A JP2015527415 A JP 2015527415A JP 2015527415 A JP2015527415 A JP 2015527415A JP 6110492 B2 JP6110492 B2 JP 6110492B2
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- 239000002105 nanoparticle Substances 0.000 title claims description 62
- 239000011258 core-shell material Substances 0.000 title claims description 27
- 239000010409 thin film Substances 0.000 title description 47
- 238000004519 manufacturing process Methods 0.000 title description 23
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 49
- 229910052738 indium Inorganic materials 0.000 claims description 47
- 238000000034 method Methods 0.000 claims description 34
- 150000003839 salts Chemical class 0.000 claims description 28
- 229910003437 indium oxide Inorganic materials 0.000 claims description 27
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 27
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 19
- 239000003638 chemical reducing agent Substances 0.000 claims description 17
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 16
- 239000002904 solvent Substances 0.000 claims description 10
- 239000003795 chemical substances by application Substances 0.000 claims description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 7
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 7
- 230000002194 synthesizing effect Effects 0.000 claims description 7
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 6
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical group [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 claims description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 6
- DNJIEGIFACGWOD-UHFFFAOYSA-N ethanethiol Chemical compound CCS DNJIEGIFACGWOD-UHFFFAOYSA-N 0.000 claims description 6
- LZZYPRNAOMGNLH-UHFFFAOYSA-M Cetrimonium bromide Chemical compound [Br-].CCCCCCCCCCCCCCCC[N+](C)(C)C LZZYPRNAOMGNLH-UHFFFAOYSA-M 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 5
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 5
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 claims description 4
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 claims description 4
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 4
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 4
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 4
- 239000001509 sodium citrate Substances 0.000 claims description 4
- PQUXFUBNSYCQAL-UHFFFAOYSA-N 1-(2,3-difluorophenyl)ethanone Chemical compound CC(=O)C1=CC=CC(F)=C1F PQUXFUBNSYCQAL-UHFFFAOYSA-N 0.000 claims description 3
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 claims description 3
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 claims description 3
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 3
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 3
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 3
- 229940047670 sodium acrylate Drugs 0.000 claims description 3
- 239000000600 sorbitol Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- QGLWBTPVKHMVHM-KTKRTIGZSA-N (z)-octadec-9-en-1-amine Chemical compound CCCCCCCC\C=C/CCCCCCCCN QGLWBTPVKHMVHM-KTKRTIGZSA-N 0.000 claims description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 2
- 229910002651 NO3 Inorganic materials 0.000 claims description 2
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims description 2
- IOVCWXUNBOPUCH-UHFFFAOYSA-M Nitrite anion Chemical compound [O-]N=O IOVCWXUNBOPUCH-UHFFFAOYSA-M 0.000 claims description 2
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims description 2
- 229960005070 ascorbic acid Drugs 0.000 claims description 2
- 235000010323 ascorbic acid Nutrition 0.000 claims description 2
- 239000011668 ascorbic acid Substances 0.000 claims description 2
- CCCMONHAUSKTEQ-UHFFFAOYSA-N octadecene Natural products CCCCCCCCCCCCCCCCC=C CCCMONHAUSKTEQ-UHFFFAOYSA-N 0.000 claims description 2
- 229920001456 poly(acrylic acid sodium salt) Polymers 0.000 claims description 2
- 229920001495 poly(sodium acrylate) polymer Polymers 0.000 claims description 2
- LJCNRYVRMXRIQR-OLXYHTOASA-L potassium sodium L-tartrate Chemical compound [Na+].[K+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O LJCNRYVRMXRIQR-OLXYHTOASA-L 0.000 claims description 2
- 229940074439 potassium sodium tartrate Drugs 0.000 claims description 2
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 claims description 2
- 235000011083 sodium citrates Nutrition 0.000 claims description 2
- 235000011006 sodium potassium tartrate Nutrition 0.000 claims description 2
- DQWPFSLDHJDLRL-UHFFFAOYSA-N triethyl phosphate Chemical compound CCOP(=O)(OCC)OCC DQWPFSLDHJDLRL-UHFFFAOYSA-N 0.000 claims description 2
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 claims description 2
- HRXKRNGNAMMEHJ-UHFFFAOYSA-K trisodium citrate Chemical compound [Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O HRXKRNGNAMMEHJ-UHFFFAOYSA-K 0.000 claims description 2
- 229940038773 trisodium citrate Drugs 0.000 claims description 2
- 235000019263 trisodium citrate Nutrition 0.000 claims description 2
- 238000001308 synthesis method Methods 0.000 claims 9
- 229940093495 ethanethiol Drugs 0.000 claims 2
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 claims 1
- FBPFZTCFMRRESA-JGWLITMVSA-N D-glucitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-JGWLITMVSA-N 0.000 claims 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-N Sulfurous acid Chemical compound OS(O)=O LSNNMFCWUKXFEE-UHFFFAOYSA-N 0.000 claims 1
- 239000002526 disodium citrate Substances 0.000 claims 1
- 235000019262 disodium citrate Nutrition 0.000 claims 1
- FGJLAJMGHXGFDE-DGFHWNFOSA-L disodium;(2r,3r)-2,3-dihydroxybutanedioate;dihydrate Chemical compound O.O.[Na+].[Na+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O FGJLAJMGHXGFDE-DGFHWNFOSA-L 0.000 claims 1
- CEYULKASIQJZGP-UHFFFAOYSA-L disodium;2-(carboxymethyl)-2-hydroxybutanedioate Chemical compound [Na+].[Na+].[O-]C(=O)CC(O)(C(=O)O)CC([O-])=O CEYULKASIQJZGP-UHFFFAOYSA-L 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims 1
- AOHJOMMDDJHIJH-UHFFFAOYSA-N propylenediamine Chemical compound CC(N)CN AOHJOMMDDJHIJH-UHFFFAOYSA-N 0.000 claims 1
- 239000001433 sodium tartrate Substances 0.000 claims 1
- 229960002167 sodium tartrate Drugs 0.000 claims 1
- 239000000243 solution Substances 0.000 description 26
- 238000000137 annealing Methods 0.000 description 17
- 230000008569 process Effects 0.000 description 17
- 238000000576 coating method Methods 0.000 description 16
- 229910052718 tin Inorganic materials 0.000 description 16
- 239000011248 coating agent Substances 0.000 description 14
- 238000005224 laser annealing Methods 0.000 description 13
- 239000000758 substrate Substances 0.000 description 13
- 239000011247 coating layer Substances 0.000 description 12
- 239000002245 particle Substances 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 10
- 238000002834 transmittance Methods 0.000 description 8
- 239000010408 film Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 230000000704 physical effect Effects 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000007639 printing Methods 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 230000009257 reactivity Effects 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 4
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000007771 core particle Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 238000005118 spray pyrolysis Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910021617 Indium monochloride Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- DPRMFUAMSRXGDE-UHFFFAOYSA-N ac1o530g Chemical compound NCCN.NCCN DPRMFUAMSRXGDE-UHFFFAOYSA-N 0.000 description 1
- 125000005595 acetylacetonate group Chemical group 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000002508 contact lithography Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000004925 denaturation Methods 0.000 description 1
- 230000036425 denaturation Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000007646 gravure printing Methods 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- APHGZSBLRQFRCA-UHFFFAOYSA-M indium(1+);chloride Chemical compound [In]Cl APHGZSBLRQFRCA-UHFFFAOYSA-M 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001540 jet deposition Methods 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- TYQCGQRIZGCHNB-JLAZNSOCSA-N l-ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(O)=C(O)C1=O TYQCGQRIZGCHNB-JLAZNSOCSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- BITYAPCSNKJESK-UHFFFAOYSA-N potassiosodium Chemical compound [Na].[K] BITYAPCSNKJESK-UHFFFAOYSA-N 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007761 roller coating Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000007764 slot die coating Methods 0.000 description 1
- HELHAJAZNSDZJO-OLXYHTOASA-L sodium L-tartrate Chemical compound [Na+].[Na+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O HELHAJAZNSDZJO-OLXYHTOASA-L 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000009718 spray deposition Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-L sulfite Chemical class [O-]S([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-L 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- PRZPUYBFEJPNPF-UHFFFAOYSA-J tetrasodium 3-carboxy-3,5-dihydroxy-5-oxopentanoate 2-hydroxypropane-1,2,3-tricarboxylate Chemical compound [Na+].C(CC(O)(C(=O)[O-])CC(=O)[O-])(=O)[O-].[Na+].[Na+].[Na+].C(CC(O)(C(=O)O)CC(=O)O)(=O)[O-] PRZPUYBFEJPNPF-UHFFFAOYSA-J 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- RBNWAMSGVWEHFP-UHFFFAOYSA-N trans-p-Menthane-1,8-diol Chemical compound CC(C)(O)C1CCC(C)(O)CC1 RBNWAMSGVWEHFP-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Manufacturing Of Electric Cables (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Non-Insulated Conductors (AREA)
- Paints Or Removers (AREA)
- Electroluminescent Light Sources (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
- Powder Metallurgy (AREA)
Description
(i)還元剤を含む第1の溶液を準備するステップ;
(ii)インジウム(In)塩を含む第2の溶液を準備するステップ;
(iii)前記第1の溶液を第2の溶液に滴加して反応させるステップ;
(iv)前記反応によってインジウム(In)またはインジウム酸化物(In2O3)ナノ粒子を合成するステップ;
(v)スズ(Sn)塩を含む第3の溶液を準備するステップ;及び
(vi)前記ステップ(iv)のナノ粒子を含む生成物にステップ(v)の第3の溶液を滴加することによってシェルを形成するステップ;
を含む方法で製造することができる。
(i)コア―シェル構造のナノ粒子を溶媒に分散させることによってコーティング液を製造するステップ;
(ii)前記コーティング液を基材上に塗布することによってコーティング層を形成するステップ;
(iii)前記コーティング層を乾燥させるステップ;及び
(iv)前記コーティング層に対してアニーリング工程を行うステップ;
を含むことを特徴とする。
(In―core―Sn―shellナノ粒子の合成)
150mmolのNaBH4を含む水溶液に13.5mmolのInCl3、及び50mmolのドデシル硫酸ナトリウム(sodium dodecylsulfate:SDS)を含む混合水溶液を1時間にわたってゆっくり滴加した後、24時間撹拌して反応させ、粒子が形成されると、1.5mmolのSnCl2を含む水溶液を再びゆっくり滴加した後、1時間撹拌して反応させ、遠心分離法で精製することによってコア―シェル構造のIn―core―Sn―shellナノ粒子を製造した。
(透明導電性薄膜サンプルの製造)
ガラス基材上に表1に示したような蒸着方法(ISは、In―core―Sn―shellナノ粒子を意味し、ITOは、スズを含む酸化インジウムナノ粒子を意味する。)、厚さ条件、及びアニーリング処理条件によってサンプルを準備した。
前記表1に示したように、サンプルを準備した後、その面抵抗、比抵抗、及び(光)透過度を測定し、その結果を表2に示した。
Claims (8)
- コア―シェル構造のナノ粒子を合成する方法であって、
(i)還元剤を含む第1の溶液を準備するステップであって、前記還元剤が、有機還元剤及び/または無機還元剤であり、前記第1の溶液中の還元剤の濃度が、インジウム(In)塩の濃度の2倍〜10倍の範囲で0.1M〜1.0Mであり、又は、インジウム(In)塩の濃度の0.1倍〜1倍の範囲で0.001M〜0.1Mである、第1の溶液を準備するステップ;
(ii)インジウム(In)塩を含む第2の溶液を準備するステップであって、前記第2の溶液中のインジウム(In)塩の濃度が0.01M〜0.1Mである、第2の溶液を準備するステップ;
(iii)前記第1の溶液を第2の溶液に滴加して反応させるステップ;
(iv)前記反応によってインジウム(In)またはインジウム酸化物(In2O3)ナノ粒子を合成するステップであって、前記反応が、30℃〜60℃の温度範囲で行われる、合成するステップ;
(v)スズ(Sn)塩を含む第3の溶液を準備するステップであって、前記第3の溶液中のスズ(Sn)塩の濃度が、スズ(Sn)/インジウム(In)のモル比が0.08〜0.1になる範囲で定められるステップ;及び
(vi)前記ステップ(iv)のナノ粒子を含む生成物にステップ(v)の第3の溶液を滴加することによってシェルを形成するステップ;
を含むことを特徴とするコア―シェル構造のナノ粒子合成方法。 - 前記還元剤が、LiBH4、NaBH4、KBH4、Ca(BH4)2、Mg(BH4)2、LiB(Et)3H2、NaBH3(CN)、NaBH(OAc)3、アスコルビン酸及びトリエタノールアミンからなる群から選ばれる一つであることを特徴とする、請求項1に記載のコア―シェル構造のナノ粒子合成方法。
- 前記第1の溶液、第2の溶液、及び第3の溶液の溶媒が、水、メタノール、エタノール、グリコール類溶媒、トルエン、オクタデセン、及びオレイルアミンからなる群から選ばれる一つ以上であることを特徴とする、請求項1に記載のコア―シェル構造のナノ粒子合成方法。
- 前記グリコール類溶媒が、エチレングリコール、DEG、NMP、ジエチレングリコールモノエチルエーテル(diethylene glycol mono ethyl ether:DEGMEE)及びトリエチレングリコールからなる群から選ばれるいずれか一つであることを特徴とする、請求項3に記載のコア―シェル構造のナノ粒子合成方法。
- 前記塩が、塩化物、硝酸塩、亜硝酸塩、硫酸塩、酢酸塩、亜硫酸塩、アセチルアセトネート塩及び水酸化物からなる群から選ばれる一つ以上の形態であることを特徴とする、請求項1に記載のコア―シェル構造のナノ粒子合成方法。
- 前記第2の溶液にはキャッピング剤がさらに含まれていることを特徴とする、請求項1に記載のコア―シェル構造のナノ粒子合成方法。
- 前記キャッピング剤が、ドデシル硫酸ナトリウム(sodium dodecylsulfate:SDS)、L―酒石酸ナトリウム(sodium L―tartrate dibasic dehydrate)、酒石酸ナトリウムカリウム(potassium sodium tartrate)、アクリル酸ナトリウム(sodium acrylate)、ポリ(アクリル酸ナトリウム塩)(Poly(acrylic acid sodium salt))、クエン酸ナトリウム(sodium citrate)、クエン酸三ナトリウム(trisodium citrate)、クエン酸二ナトリウム(disodium citrate)、臭化セチルトリメチルアンモニウム(cetyltrimethylammonium bromide:CTAB)、ポリビニルピロリドン(polyvinylpyrrolidone:PVP)、ソルビトール、リン酸トリエチル(triethyl phosphate)、エチレンジアミン(ethylene diamine)、プロピレンジアミン(propylene diamine)、エタンジチオール(1,2―ethanedithiol)、及びエタンチオール(ethanethiol)からなる群から選ばれる一つ以上であることを特徴とする、請求項6に記載のコア―シェル構造のナノ粒子合成方法。
- 前記第2の溶液におけるキャッピング剤の濃度が、インジウム(In)塩の濃度の10倍〜100倍であることを特徴とする、請求項6に記載のコア―シェル構造のナノ粒子合成方法。
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