JP6096461B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6096461B2 JP6096461B2 JP2012224978A JP2012224978A JP6096461B2 JP 6096461 B2 JP6096461 B2 JP 6096461B2 JP 2012224978 A JP2012224978 A JP 2012224978A JP 2012224978 A JP2012224978 A JP 2012224978A JP 6096461 B2 JP6096461 B2 JP 6096461B2
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- film
- insulating film
- oxide semiconductor
- oxide
- transistor
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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- 238000012546 transfer Methods 0.000 description 1
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Description
本実施の形態では、本発明の一態様である半導体装置の一例について、図1および図2を用いて説明する。
PCT:温度130℃、相対湿度100%、試験時間12時間
HAST:温度130℃、相対湿度85%、試験時間12時間
(a―A)2+(b―B)2+(c―C)2≦r2
を満たすことをいい、rは、例えば、0.05とすればよい。他の酸化物でも同様である。
次に、図1に示すトランジスタ200を有する半導体装置の作製方法について、図4および図5を用いて説明する。
実施の形態1で例示したトランジスタを用いて表示機能を有する半導体装置(表示装置ともいう)を作製することができる。また、トランジスタを含む駆動回路の一部または全体を、画素部と同じ基板上に一体形成し、システムオンパネルを形成することができる。
本実施の形態では、上述の実施の形態で説明した半導体装置を電子機器に適用する場合について、図9を用いて説明する。本実施の形態では、コンピュータ、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯情報端末(携帯型ゲーム機、音響再生装置なども含む)、デジタルカメラ、デジタルビデオカメラ、電子ペーパー、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)などの電子機器に、上述の半導体装置を適用する場合について説明する。
PCT:温度130℃、相対湿度100%、試験時間12時間
HAST:温度130℃、相対湿度85%、試験時間12時間
101 絶縁膜
102 ゲート電極
104 ゲート絶縁膜
104a 絶縁膜
104b 絶縁膜
106 酸化物半導体膜
108a ソース電極またはドレイン電極
108a1 導電膜
108a2 導電膜
108a3 導電膜
108b ドレイン電極またはソース電極
108b1 導電膜
108b2 導電膜
108b3 導電膜
110 保護膜
112 保護膜
116 絶縁膜
200 トランジスタ
250 曲線
251 接線
260 曲線
261 接線
301 基板
302 画素部
303 信号線駆動回路
304 走査線駆動回路
305 シール材
306 基板
308 液晶層
310 トランジスタ
311 トランジスタ
313 液晶素子
315 接続端子電極膜
316 端子電極膜
319 異方性導電膜
320 保護膜
321 絶縁膜
323 絶縁膜
324 保護膜
330 電極膜
331 電極膜
332 絶縁膜
333 絶縁膜
335 スペーサ
351 隔壁
352 電界発光層
353 発光素子
354 充填材
401 筐体
402 筐体
403 表示部
404 キーボード
410 タブレット型端末
411 筐体
412 表示部
413 筐体
414 表示部
415 操作ボタン
416 外部インターフェイス
417 スタイラス
420 電子書籍
421 筐体
423 筐体
425 表示部
427 表示部
431 電源
433 操作キー
435 スピーカー
437 軸部
440 筐体
441 筐体
442 表示パネル
443 スピーカー
444 マイクロフォン
445 操作キー
446 ポインティングデバイス
447 カメラ用レンズ
448 外部接続端子
449 太陽電池セル
450 外部メモリスロット
461 本体
463 接眼部
464 操作スイッチ
465 表示部
466 バッテリー
467 表示部
470 テレビジョン装置
471 筐体
473 表示部
475 スタンド
480 リモコン操作機
501 点
511 曲線
512 曲線
513 曲線
514 曲線
515 曲線
516 曲線
521 曲線
522 曲線
523 曲線
524 曲線
525 曲線
526 曲線
Claims (2)
- ゲート電極と、
前記ゲート電極と、ゲート絶縁膜を介して重なる領域を有する酸化物半導体膜と、
前記酸化物半導体膜上の、第1の絶縁膜と、
前記酸化物半導体膜と電気的に接続する、ソース電極と、
前記酸化物半導体膜と電気的に接続する、ドレイン電極と、
前記第1の絶縁膜及び前記酸化物半導体膜上の、第2の絶縁膜と、
前記第2の絶縁膜上の、第3の絶縁膜と、を有し、
前記第1の絶縁膜は、前記酸化物半導体膜のチャネル形成領域と接する第1の領域を有し、
前記第1の絶縁膜は、前記酸化物半導体膜の端部と接する第2の領域を有し、
前記第1の絶縁膜は、前記ゲート絶縁膜と同じ材料を有し、
前記第1の絶縁膜は、前記第2の領域の外側で、前記ゲート絶縁膜と接する第3の領域を有し、
前記第2の絶縁膜は、酸素と、シリコンとを有し、
前記第2の絶縁膜は、加熱により、酸素を放出する機能を有し、
前記第3の絶縁膜は、酸素と、窒素と、シリコンとを有し、
前記第3の絶縁膜は、前記酸素の含有量が前記窒素の含有量よりも多く、
前記第3の絶縁膜の密度は、2.32g/cm3以上(ただし、2.50g/cm3以上を除く)を有し、
前記第3の絶縁膜の膜厚は、600nm以上700nm以下を有することを特徴とする半導体装置。 - ゲート電極と、
前記ゲート電極と、ゲート絶縁膜を介して重なる領域を有する酸化物半導体膜と、
前記酸化物半導体膜上の、第1の絶縁膜と、
前記酸化物半導体膜と電気的に接続する、ソース電極と、
前記酸化物半導体膜と電気的に接続する、ドレイン電極と、
前記第1の絶縁膜及び前記酸化物半導体膜上の、第2の絶縁膜と、
前記第2の絶縁膜上の、第3の絶縁膜と、を有し、
前記第1の絶縁膜は、前記酸化物半導体膜のチャネル形成領域と接する第1の領域を有し、
前記第1の絶縁膜は、前記酸化物半導体膜の端部と接する第2の領域を有し、
前記第1の絶縁膜は、前記ゲート絶縁膜と同じ材料を有し、
前記第1の絶縁膜は、前記第2の領域の外側で、前記ゲート絶縁膜と接する第3の領域を有し、
前記第2の絶縁膜は、酸素と、シリコンとを有し、
前記第2の絶縁膜は、加熱により、酸素を放出する機能を有し、
前記第3の絶縁膜は、酸素と、窒素と、シリコンとを有し、
前記第3の絶縁膜は、前記酸素の含有量が前記窒素の含有量よりも多く、
前記第3の絶縁膜は、温度130℃、相対湿度100%、12時間の試験後の膨潤率が4体積%以下を有し、
前記第3の絶縁膜の膜厚は、600nm以上700nm以下を有することを特徴とする半導体装置。
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US9349593B2 (en) | 2012-12-03 | 2016-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
TWI614813B (zh) | 2013-01-21 | 2018-02-11 | 半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
US9153650B2 (en) | 2013-03-19 | 2015-10-06 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor |
TWI652822B (zh) * | 2013-06-19 | 2019-03-01 | 日商半導體能源研究所股份有限公司 | 氧化物半導體膜及其形成方法 |
TWI608523B (zh) | 2013-07-19 | 2017-12-11 | 半導體能源研究所股份有限公司 | Oxide semiconductor film, method of manufacturing oxide semiconductor film, and semiconductor device |
KR102227637B1 (ko) * | 2013-11-07 | 2021-03-16 | 삼성디스플레이 주식회사 | 적외선 감지 소자, 적외선 감지 소자를 포함하는 적외선 센서 및 이의 제조 방법 |
JP2015103598A (ja) * | 2013-11-22 | 2015-06-04 | 富士フイルム株式会社 | 有機機能層付き基板およびその製造方法 |
TWI657488B (zh) * | 2014-03-20 | 2019-04-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置、具有該半導體裝置的顯示裝置、具有該顯示裝置的顯示模組以及具有該半導體裝置、該顯示裝置和該顯示模組的電子裝置 |
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WO2013054823A1 (en) | 2013-04-18 |
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US20130092929A1 (en) | 2013-04-18 |
JP2016184744A (ja) | 2016-10-20 |
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JP2013102145A (ja) | 2013-05-23 |
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