JP6095334B2 - マスクパターンおよび露光条件を決定する方法、ならびにプログラム - Google Patents

マスクパターンおよび露光条件を決定する方法、ならびにプログラム Download PDF

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Publication number
JP6095334B2
JP6095334B2 JP2012257363A JP2012257363A JP6095334B2 JP 6095334 B2 JP6095334 B2 JP 6095334B2 JP 2012257363 A JP2012257363 A JP 2012257363A JP 2012257363 A JP2012257363 A JP 2012257363A JP 6095334 B2 JP6095334 B2 JP 6095334B2
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Japan
Prior art keywords
pattern
parameter
mask
value
evaluation
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JP2012257363A
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English (en)
Japanese (ja)
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JP2014107331A (ja
JP2014107331A5 (enExample
Inventor
晃司 三上
晃司 三上
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Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2012257363A priority Critical patent/JP6095334B2/ja
Priority to TW102140283A priority patent/TWI539243B/zh
Priority to CN201310593722.8A priority patent/CN103838089B/zh
Priority to KR1020130143629A priority patent/KR101689429B1/ko
Priority to US14/089,857 priority patent/US8958059B2/en
Publication of JP2014107331A publication Critical patent/JP2014107331A/ja
Publication of JP2014107331A5 publication Critical patent/JP2014107331A5/ja
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Publication of JP6095334B2 publication Critical patent/JP6095334B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2012257363A 2012-11-26 2012-11-26 マスクパターンおよび露光条件を決定する方法、ならびにプログラム Active JP6095334B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2012257363A JP6095334B2 (ja) 2012-11-26 2012-11-26 マスクパターンおよび露光条件を決定する方法、ならびにプログラム
TW102140283A TWI539243B (zh) 2012-11-26 2013-11-06 決定遮罩圖案及曝光條件的方法、和儲存媒體
CN201310593722.8A CN103838089B (zh) 2012-11-26 2013-11-21 确定掩模图案和曝光条件的方法以及计算机
KR1020130143629A KR101689429B1 (ko) 2012-11-26 2013-11-25 마스크 패턴 및 노광 조건 결정 방법, 기억 매체 및 컴퓨터
US14/089,857 US8958059B2 (en) 2012-11-26 2013-11-26 Method of determining mask pattern and exposure condition, storage medium, and computer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012257363A JP6095334B2 (ja) 2012-11-26 2012-11-26 マスクパターンおよび露光条件を決定する方法、ならびにプログラム

Publications (3)

Publication Number Publication Date
JP2014107331A JP2014107331A (ja) 2014-06-09
JP2014107331A5 JP2014107331A5 (enExample) 2016-01-21
JP6095334B2 true JP6095334B2 (ja) 2017-03-15

Family

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JP2012257363A Active JP6095334B2 (ja) 2012-11-26 2012-11-26 マスクパターンおよび露光条件を決定する方法、ならびにプログラム

Country Status (5)

Country Link
US (1) US8958059B2 (enExample)
JP (1) JP6095334B2 (enExample)
KR (1) KR101689429B1 (enExample)
CN (1) CN103838089B (enExample)
TW (1) TWI539243B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5835968B2 (ja) * 2011-07-05 2015-12-24 キヤノン株式会社 決定方法、プログラム及び露光方法
US10025201B2 (en) 2014-04-14 2018-07-17 Asml Netherlands B.V. Flows of optimization for lithographic processes
TWI710866B (zh) * 2014-05-30 2020-11-21 日商尼康股份有限公司 用於微影步驟之電腦程式及電腦可讀取記錄媒體
KR102404639B1 (ko) 2015-02-02 2022-06-03 삼성전자주식회사 전자 빔 노광 방법 및 그를 포함하는 기판 제조 방법
CN107667315B (zh) * 2015-05-29 2021-04-16 Asml荷兰有限公司 使用对源辐射的角分布的多次采样的光刻术模拟
US9588446B2 (en) * 2015-05-29 2017-03-07 Taiwan Semiconductor Manufacturing Co., Ltd. Calibration apparatus and an adjustment method for a lithography apparatus

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3409493B2 (ja) * 1995-03-13 2003-05-26 ソニー株式会社 マスクパターンの補正方法および補正装置
JP2002329658A (ja) * 2001-05-01 2002-11-15 Fujitsu Ltd 光近接効果補正方法
TWI252516B (en) * 2002-03-12 2006-04-01 Toshiba Corp Determination method of process parameter and method for determining at least one of process parameter and design rule
JP2004077837A (ja) * 2002-08-19 2004-03-11 Sony Corp 設計パターンの補正方法
JP2005049403A (ja) * 2003-07-29 2005-02-24 Seiko Epson Corp 露光用マスク、光近接効果補正装置、光近接効果補正方法、半導体装置の製造方法および光近接効果補正プログラム
JP4351928B2 (ja) * 2004-02-23 2009-10-28 株式会社東芝 マスクデータの補正方法、フォトマスクの製造方法及びマスクデータの補正プログラム
JP2007086586A (ja) * 2005-09-26 2007-04-05 Renesas Technology Corp マスクパターン設計方法および半導体装置の製造方法
JP5071785B2 (ja) * 2007-07-13 2012-11-14 独立行政法人産業技術総合研究所 マスクパターン形成方法
JP5404216B2 (ja) * 2009-07-02 2014-01-29 キヤノン株式会社 露光方法、露光装置及びデバイス製造方法
NL2005522A (en) * 2009-10-28 2011-05-02 Asml Netherlands Bv Pattern selection for full-chip source and mask optimization.
US8739079B2 (en) * 2009-10-30 2014-05-27 Canon Kabushiki Kaisha Recording medium and determination method
JP5686567B2 (ja) * 2010-10-19 2015-03-18 キヤノン株式会社 露光条件及びマスクパターンを決定するプログラム及び方法
KR101833017B1 (ko) * 2011-02-15 2018-04-13 삼성전자 주식회사 포토 마스크의 제조 방법

Also Published As

Publication number Publication date
CN103838089A (zh) 2014-06-04
US8958059B2 (en) 2015-02-17
JP2014107331A (ja) 2014-06-09
TWI539243B (zh) 2016-06-21
CN103838089B (zh) 2017-01-18
TW201421171A (zh) 2014-06-01
KR101689429B1 (ko) 2016-12-23
KR20140067919A (ko) 2014-06-05
US20140146311A1 (en) 2014-05-29

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