KR101689429B1 - 마스크 패턴 및 노광 조건 결정 방법, 기억 매체 및 컴퓨터 - Google Patents

마스크 패턴 및 노광 조건 결정 방법, 기억 매체 및 컴퓨터 Download PDF

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KR101689429B1
KR101689429B1 KR1020130143629A KR20130143629A KR101689429B1 KR 101689429 B1 KR101689429 B1 KR 101689429B1 KR 1020130143629 A KR1020130143629 A KR 1020130143629A KR 20130143629 A KR20130143629 A KR 20130143629A KR 101689429 B1 KR101689429 B1 KR 101689429B1
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South Korea
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pattern
parameter
evaluation
mask
value
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Korean (ko)
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KR20140067919A (ko
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고지 미카미
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캐논 가부시끼가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
KR1020130143629A 2012-11-26 2013-11-25 마스크 패턴 및 노광 조건 결정 방법, 기억 매체 및 컴퓨터 Active KR101689429B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012257363A JP6095334B2 (ja) 2012-11-26 2012-11-26 マスクパターンおよび露光条件を決定する方法、ならびにプログラム
JPJP-P-2012-257363 2012-11-26

Publications (2)

Publication Number Publication Date
KR20140067919A KR20140067919A (ko) 2014-06-05
KR101689429B1 true KR101689429B1 (ko) 2016-12-23

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KR1020130143629A Active KR101689429B1 (ko) 2012-11-26 2013-11-25 마스크 패턴 및 노광 조건 결정 방법, 기억 매체 및 컴퓨터

Country Status (5)

Country Link
US (1) US8958059B2 (enExample)
JP (1) JP6095334B2 (enExample)
KR (1) KR101689429B1 (enExample)
CN (1) CN103838089B (enExample)
TW (1) TWI539243B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5835968B2 (ja) * 2011-07-05 2015-12-24 キヤノン株式会社 決定方法、プログラム及び露光方法
KR102006321B1 (ko) 2014-04-14 2019-08-01 에이에스엠엘 네델란즈 비.브이. 리소그래피 공정들에 대한 최적화의 흐름들
TWI675259B (zh) * 2014-05-30 2019-10-21 日商尼康股份有限公司 微影系統、模擬裝置、及圖案形成方法
KR102404639B1 (ko) 2015-02-02 2022-06-03 삼성전자주식회사 전자 빔 노광 방법 및 그를 포함하는 기판 제조 방법
WO2016192964A1 (en) * 2015-05-29 2016-12-08 Asml Netherlands B.V. Simulation of lithography using multiple-sampling of angular distribution of source radiation
US9588446B2 (en) * 2015-05-29 2017-03-07 Taiwan Semiconductor Manufacturing Co., Ltd. Calibration apparatus and an adjustment method for a lithography apparatus

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3409493B2 (ja) * 1995-03-13 2003-05-26 ソニー株式会社 マスクパターンの補正方法および補正装置
JP2002329658A (ja) * 2001-05-01 2002-11-15 Fujitsu Ltd 光近接効果補正方法
TWI252516B (en) * 2002-03-12 2006-04-01 Toshiba Corp Determination method of process parameter and method for determining at least one of process parameter and design rule
JP2004077837A (ja) * 2002-08-19 2004-03-11 Sony Corp 設計パターンの補正方法
JP2005049403A (ja) * 2003-07-29 2005-02-24 Seiko Epson Corp 露光用マスク、光近接効果補正装置、光近接効果補正方法、半導体装置の製造方法および光近接効果補正プログラム
JP4351928B2 (ja) * 2004-02-23 2009-10-28 株式会社東芝 マスクデータの補正方法、フォトマスクの製造方法及びマスクデータの補正プログラム
JP2007086586A (ja) * 2005-09-26 2007-04-05 Renesas Technology Corp マスクパターン設計方法および半導体装置の製造方法
JP5071785B2 (ja) * 2007-07-13 2012-11-14 独立行政法人産業技術総合研究所 マスクパターン形成方法
JP5404216B2 (ja) * 2009-07-02 2014-01-29 キヤノン株式会社 露光方法、露光装置及びデバイス製造方法
NL2005523A (en) * 2009-10-28 2011-05-02 Asml Netherlands Bv Selection of optimum patterns in a design layout based on diffraction signature analysis.
US8739079B2 (en) * 2009-10-30 2014-05-27 Canon Kabushiki Kaisha Recording medium and determination method
JP5686567B2 (ja) * 2010-10-19 2015-03-18 キヤノン株式会社 露光条件及びマスクパターンを決定するプログラム及び方法
KR101833017B1 (ko) * 2011-02-15 2018-04-13 삼성전자 주식회사 포토 마스크의 제조 방법

Also Published As

Publication number Publication date
US8958059B2 (en) 2015-02-17
US20140146311A1 (en) 2014-05-29
CN103838089A (zh) 2014-06-04
JP6095334B2 (ja) 2017-03-15
CN103838089B (zh) 2017-01-18
TW201421171A (zh) 2014-06-01
TWI539243B (zh) 2016-06-21
JP2014107331A (ja) 2014-06-09
KR20140067919A (ko) 2014-06-05

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