CN103838089B - 确定掩模图案和曝光条件的方法以及计算机 - Google Patents

确定掩模图案和曝光条件的方法以及计算机 Download PDF

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Publication number
CN103838089B
CN103838089B CN201310593722.8A CN201310593722A CN103838089B CN 103838089 B CN103838089 B CN 103838089B CN 201310593722 A CN201310593722 A CN 201310593722A CN 103838089 B CN103838089 B CN 103838089B
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China
Prior art keywords
pattern
evaluation
mask
parameter
value
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CN201310593722.8A
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Chinese (zh)
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CN103838089A (zh
Inventor
三上晃司
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Canon Inc
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Canon Inc
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN201310593722.8A 2012-11-26 2013-11-21 确定掩模图案和曝光条件的方法以及计算机 Active CN103838089B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012257363A JP6095334B2 (ja) 2012-11-26 2012-11-26 マスクパターンおよび露光条件を決定する方法、ならびにプログラム
JP2012-257363 2012-11-26

Publications (2)

Publication Number Publication Date
CN103838089A CN103838089A (zh) 2014-06-04
CN103838089B true CN103838089B (zh) 2017-01-18

Family

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CN201310593722.8A Active CN103838089B (zh) 2012-11-26 2013-11-21 确定掩模图案和曝光条件的方法以及计算机

Country Status (5)

Country Link
US (1) US8958059B2 (enExample)
JP (1) JP6095334B2 (enExample)
KR (1) KR101689429B1 (enExample)
CN (1) CN103838089B (enExample)
TW (1) TWI539243B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5835968B2 (ja) * 2011-07-05 2015-12-24 キヤノン株式会社 決定方法、プログラム及び露光方法
CN106164777B (zh) * 2014-04-14 2019-06-18 Asml荷兰有限公司 光刻过程的优化流程
TWI710866B (zh) 2014-05-30 2020-11-21 日商尼康股份有限公司 用於微影步驟之電腦程式及電腦可讀取記錄媒體
KR102404639B1 (ko) 2015-02-02 2022-06-03 삼성전자주식회사 전자 빔 노광 방법 및 그를 포함하는 기판 제조 방법
US9588446B2 (en) * 2015-05-29 2017-03-07 Taiwan Semiconductor Manufacturing Co., Ltd. Calibration apparatus and an adjustment method for a lithography apparatus
CN107667315B (zh) * 2015-05-29 2021-04-16 Asml荷兰有限公司 使用对源辐射的角分布的多次采样的光刻术模拟

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3409493B2 (ja) * 1995-03-13 2003-05-26 ソニー株式会社 マスクパターンの補正方法および補正装置
JP2002329658A (ja) * 2001-05-01 2002-11-15 Fujitsu Ltd 光近接効果補正方法
TWI252516B (en) * 2002-03-12 2006-04-01 Toshiba Corp Determination method of process parameter and method for determining at least one of process parameter and design rule
JP2004077837A (ja) * 2002-08-19 2004-03-11 Sony Corp 設計パターンの補正方法
JP2005049403A (ja) * 2003-07-29 2005-02-24 Seiko Epson Corp 露光用マスク、光近接効果補正装置、光近接効果補正方法、半導体装置の製造方法および光近接効果補正プログラム
JP4351928B2 (ja) * 2004-02-23 2009-10-28 株式会社東芝 マスクデータの補正方法、フォトマスクの製造方法及びマスクデータの補正プログラム
JP2007086586A (ja) * 2005-09-26 2007-04-05 Renesas Technology Corp マスクパターン設計方法および半導体装置の製造方法
JP5071785B2 (ja) * 2007-07-13 2012-11-14 独立行政法人産業技術総合研究所 マスクパターン形成方法
JP5404216B2 (ja) * 2009-07-02 2014-01-29 キヤノン株式会社 露光方法、露光装置及びデバイス製造方法
NL2005522A (en) * 2009-10-28 2011-05-02 Asml Netherlands Bv Pattern selection for full-chip source and mask optimization.
US8739079B2 (en) * 2009-10-30 2014-05-27 Canon Kabushiki Kaisha Recording medium and determination method
JP5686567B2 (ja) * 2010-10-19 2015-03-18 キヤノン株式会社 露光条件及びマスクパターンを決定するプログラム及び方法
KR101833017B1 (ko) * 2011-02-15 2018-04-13 삼성전자 주식회사 포토 마스크의 제조 방법

Also Published As

Publication number Publication date
JP2014107331A (ja) 2014-06-09
CN103838089A (zh) 2014-06-04
US20140146311A1 (en) 2014-05-29
JP6095334B2 (ja) 2017-03-15
US8958059B2 (en) 2015-02-17
TW201421171A (zh) 2014-06-01
KR20140067919A (ko) 2014-06-05
TWI539243B (zh) 2016-06-21
KR101689429B1 (ko) 2016-12-23

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