JP6090113B2 - 液処理装置 - Google Patents

液処理装置 Download PDF

Info

Publication number
JP6090113B2
JP6090113B2 JP2013225380A JP2013225380A JP6090113B2 JP 6090113 B2 JP6090113 B2 JP 6090113B2 JP 2013225380 A JP2013225380 A JP 2013225380A JP 2013225380 A JP2013225380 A JP 2013225380A JP 6090113 B2 JP6090113 B2 JP 6090113B2
Authority
JP
Japan
Prior art keywords
substrate
wafer
liquid
holding
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2013225380A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015088598A5 (enExample
JP2015088598A (ja
Inventor
治郎 東島
治郎 東島
裕一 道木
裕一 道木
正巳 飽本
正巳 飽本
茂久 井上
茂久 井上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2013225380A priority Critical patent/JP6090113B2/ja
Priority to US14/525,541 priority patent/US9953852B2/en
Priority to KR1020140147230A priority patent/KR102294321B1/ko
Publication of JP2015088598A publication Critical patent/JP2015088598A/ja
Publication of JP2015088598A5 publication Critical patent/JP2015088598A5/ja
Application granted granted Critical
Publication of JP6090113B2 publication Critical patent/JP6090113B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/6715Apparatus for applying a liquid, a resin, an ink or the like
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67075Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00Cleaning and liquid contact with solids
    • Y10S134/902Semiconductor wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2013225380A 2013-10-30 2013-10-30 液処理装置 Active JP6090113B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2013225380A JP6090113B2 (ja) 2013-10-30 2013-10-30 液処理装置
US14/525,541 US9953852B2 (en) 2013-10-30 2014-10-28 Liquid processing aparatus
KR1020140147230A KR102294321B1 (ko) 2013-10-30 2014-10-28 액 처리 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013225380A JP6090113B2 (ja) 2013-10-30 2013-10-30 液処理装置

Publications (3)

Publication Number Publication Date
JP2015088598A JP2015088598A (ja) 2015-05-07
JP2015088598A5 JP2015088598A5 (enExample) 2015-11-26
JP6090113B2 true JP6090113B2 (ja) 2017-03-08

Family

ID=52994073

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013225380A Active JP6090113B2 (ja) 2013-10-30 2013-10-30 液処理装置

Country Status (3)

Country Link
US (1) US9953852B2 (enExample)
JP (1) JP6090113B2 (enExample)
KR (1) KR102294321B1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10707099B2 (en) 2013-08-12 2020-07-07 Veeco Instruments Inc. Collection chamber apparatus to separate multiple fluids during the semiconductor wafer processing cycle
US9768041B2 (en) 2013-08-12 2017-09-19 Veeco Precision Surface Processing Llc Collection chamber apparatus to separate multiple fluids during the semiconductor wafer processing cycle
KR102356217B1 (ko) * 2015-05-14 2022-01-27 에이씨엠 리서치 (상하이) 인코포레이티드 기판 베벨 및 이면 보호를 위한 장치
JP6419053B2 (ja) 2015-10-08 2018-11-07 東京エレクトロン株式会社 基板処理方法および基板処理装置
KR102542886B1 (ko) * 2016-04-25 2023-06-12 동우 화인켐 주식회사 코팅용 지그 및 이를 이용한 코팅 방법
WO2018200398A1 (en) 2017-04-25 2018-11-01 Veeco Precision Surface Processing Llc Semiconductor wafer processing chamber
JP6571253B2 (ja) * 2018-08-20 2019-09-04 東京エレクトロン株式会社 基板処理方法および基板処理装置
JP7093703B2 (ja) * 2018-09-07 2022-06-30 東京エレクトロン株式会社 基板処理装置および基板処理方法
JP7213648B2 (ja) * 2018-09-27 2023-01-27 東京エレクトロン株式会社 基板処理装置
JP7372068B2 (ja) * 2019-07-19 2023-10-31 株式会社Screenホールディングス 基板処理装置および基板処理方法
KR102548765B1 (ko) * 2020-12-30 2023-06-29 세메스 주식회사 지지 유닛, 기판 처리 장치 및 방법
US11994801B2 (en) * 2021-05-13 2024-05-28 STATS ChipPAC Pte. Ltd. Semiconductor device and method of coating a semiconductor wafer with high viscosity liquid photoresist using N2 purge
KR102616061B1 (ko) * 2021-08-24 2023-12-20 (주)디바이스이엔지 바울 조립체를 포함하는 기판 처리장치
JP7731250B2 (ja) * 2021-09-22 2025-08-29 株式会社Screenホールディングス 基板処理装置
KR102869894B1 (ko) * 2021-10-08 2025-10-10 세메스 주식회사 기판처리장치 및 기판처리방법
CN114130782A (zh) * 2021-11-29 2022-03-04 上海华力微电子有限公司 单片晶圆药液回收装置及方法
KR102685984B1 (ko) * 2022-04-19 2024-07-17 삼성전자주식회사 스핀 코팅 장치 및 이를 이용한 포토레지스트 코팅 방법

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1372186B1 (de) * 2000-10-31 2008-12-10 Sez Ag Vorrichtung zur Flüssigkeitsbehandlung von scheibenförmigen Gegenständen
DE602007003506D1 (de) * 2006-04-18 2010-01-14 Tokyo Electron Ltd Flüssigkeitsverarbeitungsvorrichtung
EP1848024B1 (en) * 2006-04-18 2009-10-07 Tokyo Electron Limited Liquid processing apparatus
JP4787103B2 (ja) 2006-07-28 2011-10-05 東京エレクトロン株式会社 液処理装置
JP4547016B2 (ja) * 2008-04-04 2010-09-22 東京エレクトロン株式会社 半導体製造装置、半導体製造方法
JP5413016B2 (ja) 2008-07-31 2014-02-12 東京エレクトロン株式会社 基板の洗浄方法、基板の洗浄装置及び記憶媒体
JP4816747B2 (ja) * 2009-03-04 2011-11-16 東京エレクトロン株式会社 液処理装置及び液処理方法
JP5775339B2 (ja) * 2011-03-22 2015-09-09 株式会社Screenホールディングス 基板処理装置
JP5975563B2 (ja) * 2012-03-30 2016-08-23 株式会社Screenホールディングス 基板処理装置および基板処理方法
JP6022430B2 (ja) * 2012-11-21 2016-11-09 東京エレクトロン株式会社 基板処理装置
JP6287750B2 (ja) * 2013-12-27 2018-03-07 東京エレクトロン株式会社 基板液処理装置

Also Published As

Publication number Publication date
US20150114561A1 (en) 2015-04-30
US9953852B2 (en) 2018-04-24
KR102294321B1 (ko) 2021-08-25
KR20150050416A (ko) 2015-05-08
JP2015088598A (ja) 2015-05-07

Similar Documents

Publication Publication Date Title
JP6090113B2 (ja) 液処理装置
JP6287750B2 (ja) 基板液処理装置
KR101819952B1 (ko) 기판 액처리 장치
KR102566736B1 (ko) 기판 처리 장치, 기판 처리 방법 및 기억 매체
KR102407530B1 (ko) 기판 액처리 장치
CN109216236B (zh) 基片处理装置、基片处理方法和存储介质
JP7138539B2 (ja) 基板処理装置及び基板処理方法
TWI665723B (zh) 基板處理裝置及基板處理方法
JP5726637B2 (ja) 液処理装置、液処理方法
JP6125449B2 (ja) 基板液処理装置及び基板液処理方法
JP6282988B2 (ja) 基板処理装置、基板処理方法、及び記憶媒体
JP2019134000A (ja) 基板処理装置
JP5726636B2 (ja) 液処理装置、液処理方法
JP6184890B2 (ja) 基板液処理装置、基板液処理方法及び記憶媒体
JP6538233B2 (ja) 基板液処理装置
JP6312615B2 (ja) 基板処理装置及び基板処理方法
JP6258132B2 (ja) 基板液処理装置
JP6184892B2 (ja) 基板液処理装置、基板液処理方法及び記憶媒体
JP2018056219A (ja) 基板処理装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20151013

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20151013

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20160921

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20161004

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20161125

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20170110

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20170123

R150 Certificate of patent or registration of utility model

Ref document number: 6090113

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250